Zinc oxide based film transistor and chip preparing process

Abstract

This invention relates to one application new type high dielectric constant material that cubic ZnMgO crystal film as grid insulating layer, hexagonal phase ZnO base semiconductor nm film as channel layer, ITO or ZnO:Al conducting glass as electrode film TFT reparation technique, it belongs to micro electronic technology field. The advantage is that active layer and grid insulating device structure can grow on the glass substrate to provide one simple TFT manufacture technique, comparing to existing non crystal or multi crystal silicon TFT, the zinc oxide group is transparent to visible light and high mobility. It has great application prospect in flat panel display, printer, and duplicator and video camera products.

Description

technical field [0001] The invention relates to the manufacture of a novel thin-film transistor, which belongs to the technical field of microelectronics, in particular to a zinc oxide-based thin-film transistor and a chip preparation process. Background technique [0002] Thin-film transistor (TFT), also known as thin-film field-effect transistor, is a type of field-effect transistor. Currently, TFT occupies the second largest market for silicon chip technology. It is used in flat panel displays, cameras, printers, copiers and consumer electronics. It is characterized by low cost, because compared with the semiconductor surface treatment, isolation, doping, photolithography, and reduction used in microelectronic devices fabricated on single crystal Si and GaAs substrates, In terms of complex processes such as thin films, the TFT device process is much simpler. The main process is low-temperature deposition of channels and gates on conductive transparent glass substrates and...

AI Technical Summary

Problems solved by technology

[0005] However, the biggest disadvantage of α-Si:H TFT is the low effective mobility (2 / V.S), at the same time, due to the relatively narrow bandgap of α-Si (~1.7eV), it is opaque in the visible light range, which is not conducive to improving the brightness of the display, and changes in light or ambient temperature will cause device failure, limiting α-Si :H TFT application range, especially α-Si:H TFT can not be used to make start-up circuit, TFT-LCD needs to configure a dedicated peripheral drive circuit, which increases the manufacturing cost and reduces the reliability

[0006] Replacing α-Si with polysilicon technology, although the effective mobility is expected to be greatly improved, but the growth temperature of polysilicon is as high as 600 ° C, transparent glass can hardly withstand high temperatures above 500 ° C, and the manufacturing cost has increased significantly. The absorption of visible light The problem is not completely resolved

[0007] Manufacturing transparent thin-film transistors with wide-bandgap GaN and SiC semiconductors requires high-temperature growth on semiconductor single-crystal substrates. For example, the growth temperature of GaN is ≥800°C, which cannot be grown on glass, and the manufacturing cost is also high.

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