Low voltage electron source with self aligned gate apertures, fabrication method thereof, and x-ray generator using the electron source
a low-voltage electron source and gate aperture technology, which is applied in the manufacture of electrode systems, electrodes, electric discharge tubes/lamps, etc., can solve the problems of device drivers, power consumption, and current state of the art of cnt electron sources that do not meet the above requirements
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[0086]FIG. 2 illustrates an electron source 200 by current invention using vertically aligned and mono-dispersed CNT 20 as emitter. It includes a cathode electrode 30 deposited on a substrate 40; an emitter layer 100 disposed over the cathode and formed from an embedding dielectric 52 and an array of CNTs embedded therein, the emitter layer having a surface parallel to which the CNTs have been truncated to the same length, and above the surface the CNTs protrude by a small fraction of one micrometer; a gate insulator 36 disposed over the emitter layer of a thickness on the order of 100 nm and having an array of apertures, each aligned with and exposes one nano-structure in the emitter layer; and a gate electrode 32 deposited on the gate insulator and having an array of apertures 34 aligned with the apertures in the insulator and spaced from the exposed CNT by a distance equal to the thickness of the insulator. When a positive voltage is applied between the gate and the cathode elect...
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