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Method for preparing doped zinc oxide double crystal nano belt by sol-gel

A sol-gel and zinc oxide technology, applied in low-dimensional nanomaterials and nanoscale fields, can solve problems such as complex process conditions, high operating level requirements, expensive equipment and raw materials, etc., and achieve simple preparation process, good controllability, and equipment simple effect

Inactive Publication Date: 2007-10-10
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Existing preparation doping technology, including ion beam implantation technology, metal organic chemical sol-gel technology (MOCVD), its equipment and raw materials are all expensive, process conditions are complex and operation level requirements are high, so the required cost of the product is high, so, It is of great significance to study a low-cost, well-controllable doped twin-crystal zinc oxide nanoribbon and its preparation method

Method used

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  • Method for preparing doped zinc oxide double crystal nano belt by sol-gel
  • Method for preparing doped zinc oxide double crystal nano belt by sol-gel
  • Method for preparing doped zinc oxide double crystal nano belt by sol-gel

Examples

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Embodiment 1

[0020] See Figure 1. The device of this embodiment is a horizontal tube furnace 1 with a silicon carbide rod as a heating source. The reaction system is composed of a precursor reaction source 4, a quartz tube 6, a quartz boat 5, its cover 3 and a silicon substrate 2. The flowing air Stream 7 is the carrier gas flow.

[0021] The structure of the device of the present embodiment is: a quartz tube 6 is arranged in the horizontal tube furnace 1 with a silicon carbide rod as a heating source, a quartz boat 5 is arranged in the quartz tube 6, and a quartz boat cover is arranged on the quartz boat 5 . The air flow 7 as the carrier flow enters from one end of the quartz tube 6 and flows out from the other end, and the precursor reaction source 4 is placed in the quartz boat 5 .

[0022] (1) 8.14g of zinc oxide (ZnO) powder (purity 99.99%, particle size 2 o 3 , purity 99.9995%, particle size <500μm) mixed, dissolved in the mixed acid of citric acid and acetic acid (4.0g citric acid...

Embodiment 2

[0028] The device used is as in Example 1.

[0029] (1) 8.14g of zinc oxide (ZnO) powder (purity 99.99%, particle size 2 o 3 ) powder (purity 99.999%, particle size <500μm) mixed, dissolved in the mixed acid of citric acid and acetic acid (6.0g citric acid / 50ml 2.0M acetic acid) to make 1.0M zinc acetate solution, 1.0M zinc acetate solution and 5ml / The volume ratio of the ethanol solution of ethylene glycol with a concentration of 25ml is 0.8: 1v / v;

[0030] (2) Put 100ml of the batching solution in step (1) into a 200ml Erlenmeyer flask, heat and stir at 60°C for 2 hours, and age for 24 hours to form a sol-state product;

[0031] (3) The sol-state product obtained in step (2) is moved into a 150ml quartz crucible and covered with a quartz crucible lid, heated to 180° C. in a muffle furnace, and reacted completely after 6 hours;

[0032] (4) The gel-state product obtained in step (3) is continuously heated in a muffle furnace at 300° C. for 2 hours to obtain a powdery mater...

Embodiment 3

[0035] The device used is as in Example 1.

[0036](1) Mix 8.14g zinc oxide (ZnO) powder (purity 99.99%, particle size <500 μm) and 0.45 g magnesium oxide (MgO) powder (purity 99.998%, particle size <500 μm) for doping, Dissolve in the mixed acid of citric acid and acetic acid (2.0g citric acid / 50ml 2.0M acetic acid) and make 1.0M zinc acetate solution, the volume ratio of 1.0M zinc acetate solution and the ethanol solution of ethylene glycol of 5ml / 25ml concentration is 1.2:1v / v;

[0037] (2) Put 100ml of the batching solution in step (1) into a 200ml Erlenmeyer flask, heat and stir at 50°C for 2 hours, and age for 12 hours to form a sol-state product;

[0038] (3) The sol-state product obtained in step (2) is moved into a 150ml quartz crucible and covered with a quartz crucible lid, heated to 150° C. in a muffle furnace, and the reaction is complete after 1 hour;

[0039] (4) The gel-state product obtained in step (3) is continuously heated in a muffle furnace at 380° C. f...

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Abstract

The present invention belongs to the field of low-dimensional nanometer material and nanometer technology, and is especially sol-gel process of preparing double-crystal nanometer doped zinc oxide belt in great amount. The process includes mixing zinc oxide powder with one kind of doped metal powder of Fe, Ga, Mg or In, dissolving in mixed acid of nitric acid and acetic acid or nitric acid to form zinc salt solution, further mixing with ethanol solution of ethylene glycol, heating and stirring to form sol, ageing to form gel, polymerizing in muffle, stoving into powder, grinding powder into nanometer granular reactant precursor, setting inside quartz boat and heating to react in tubular furnace, and cooling to obtain the double-crystal nanometer doped zinc oxide belt with dopent amount of 1-10 mol% of zinc oxide, micron level length and width of 50-300 nm, with the product being distributed on silicon chip.

Description

technical field [0001] The invention belongs to the field of low-dimensional nanomaterials and nanotechnology, and particularly relates to a method for mass-preparing doped zinc oxide twin-crystal nanobelts by using sol-gel chemical reaction combined with physical gas-solid crystal growth mechanism. Background technique [0002] Semiconductor doping is a very effective way to improve its performance, not only because it is difficult to avoid the mixing of impurities in the process of crystal preparation, but more importantly, in order to control the properties of semiconductors, some impurities are artificially and controlledly added . Therefore, it is possible to improve the performance of semiconductor devices by starting from improving the properties of nanomaterials and conducting in-depth research on major fundamental issues that affect material performance. [0003] Existing preparation doping technology, including ion beam implantation technology, metal organic chemi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G9/02C30B5/02C30B29/62C30B29/16
Inventor 周少敏张晓宏孟祥敏
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI