Method for coating silicon carbide on carbon material

A technology of silicon carbide coating and carbon material, which is applied in the field of silicon carbide coating, can solve the problems of increased preparation cost and poor coating controllability, and achieve good oxidation resistance, uniform coating, thermal shock resistance and oxidation resistance Effect

Active Publication Date: 2009-05-06
SHANXI INST OF COAL CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the use of embedded infiltration to improve the bonding force between the deposit and the substrate, the controllability of the coating is poor, and the preparation cost is also increased.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Mix 2g of Si powder with a particle size of 40nm, 1g of PVB and 100ml of acetone, then add 1ml of n-butylamine to obtain a mixed solution, and ultrasonically disperse for 5 minutes to disperse the suspension evenly. The surface of the graphite material is cleaned and decontaminated, and then ultrasonically cleaned with distilled water. After drying, it is used as an anode and placed in a suspension, and silicon is deposited by electrophoretic deposition. The voltage is constant during the deposition process, the electrophoretic deposition parameters are electric field strength 50V / cm, and the deposition time is 3min, and a coating of 80 μm can be coated on the surface of the graphite material. After that, it was dried in a drying oven at 100°C for 4 hours to obtain a dried coating. Put the clad body in a graphite crucible, and heat the crucible in a resistance furnace. The heating rate is from 3°C / min to 400°C, and the temperature is maintained for 30 minutes, and then...

Embodiment 2

[0017] Mix 3g of Si powder with a particle size of 100nm, 5g of PVB and 100ml of acetone, then add 5ml of n-butylamine to obtain a mixed solution, and ultrasonically disperse for 5 minutes to disperse the mixed solution evenly. The surface of the carbon material is cleaned and decontaminated, and then ultrasonically cleaned with distilled water. After drying, it is placed in a suspension as an anode, and silicon is deposited by electrophoretic deposition. The voltage is constant during the deposition process, the electrophoretic deposition parameters are electric field intensity 35V / cm, and the deposition time is 5min, and a coating of 90 μm can be coated on the surface of the carbon material. After that, it was dried in a drying oven at 150°C for 3 hours to obtain a dried coating. Put the clad body in a graphite crucible, and heat the crucible in a resistance furnace. The heating rate is 5°C / min to 400°C, and the temperature is maintained for 20 minutes, and then the furnace...

Embodiment 3

[0019] Mix 5g of Si powder with a particle size of 0.5μm, 7g of PVB and 100ml of acetone, then add 10ml of n-butylamine to obtain a mixed solution, and ultrasonically disperse for 5 minutes to disperse the mixed solution evenly. The surface of the carbon material is cleaned and decontaminated, and then ultrasonically cleaned with distilled water. After drying, it is placed in a suspension as an anode, and silicon is deposited by electrophoretic deposition. The voltage is constant during the deposition process, the electrophoretic deposition parameters are electric field intensity 20V / cm, and the deposition time is 10min, and a coating of 100 μm can be coated on the surface of the carbon material. After that, it was placed in a drying oven at 100° C. for 2 hours to obtain a dried coating. Put the clad body in a graphite crucible, and heat the crucible in a resistance furnace. The heating rate is from 10°C / min to 400°C, and the temperature is maintained for 60 minutes, and then...

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Abstract

The invention discloses a method for coating silicon carbide on a carbon material, which comprises the following steps: silicon powder, acetone, an additive and an adhesive are mixed and ultrasonically dispersed for 3 to 5 minutes to obtain a steady suspension. The carbon material covering Si can be obtained by performing the electrophoretic deposition of the Si on the surface of the carbon material and taking the carbon material as an electrode. The carbon material is dried at a temperature of between 100 and 150 DEG C and is heated and sintered in an electrical resistance furnace. The heating temperature is between 1,000 and 1,500 DEG C, and the SiC coating of the carbon material can be prepared after the thermal insulation is performed for 20 to 60 minutes. The method has the advantages of relatively simple technical process, good repetitiveness, and quick deposition process, and the obtained coating has controllable thickness and is uniform.

Description

technical field [0001] The invention relates to a method for coating silicon carbide on the surface of carbon materials. Background technique [0002] Carbon materials have many advantages as high-temperature structural materials, such as thermal stability, chemical stability, electrical conductivity, thermal shock resistance, etc., and have high mechanical strength at 2000 °C. It is widely used in aviation, aerospace, metallurgy, nuclear energy and other fields. However, the reaction with oxidizing gas above 400°C will reduce the performance, which limits its application in high temperature oxidizing atmosphere. Therefore, the oxidation protection treatment of carbon materials is the fundamental measure to improve their working stability and reliability. [0003] Coating treatment of carbon materials is a main method to solve the high temperature oxidation protection of carbon materials. As a coating material, SiC has the advantages of thermal expansion coefficient close...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/65
CPCC04B41/009C04B41/50
Inventor 史景利赵文涛郭全贵刘朗
Owner SHANXI INST OF COAL CHEM CHINESE ACAD OF SCI
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