Material for forming silicon-containing film, and silicon-containing insulating film and method for forming the same

A silicon-containing film and organosilane technology, applied in plastic/resin/wax insulators, organic insulators, chemical instruments and methods, etc., can solve the problems of high hygroscopicity of insulating films, increased film dielectric constant, and increased leakage current. Achieve high process resistance and excellent mechanical strength

Inactive Publication Date: 2009-12-23
JSR CORPORATIOON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, among these silane compounds, there are chemically stable compounds that require extreme conditions for film formation by chemical vapor deposition, and conversely, chemically unstable compounds that react in the piping supplied to the chamber. Compounds with poor storage stability
[0010] In addition, depending on the selected compound, the hygroscopicity of the insulating film after film formation may be high, which may lead to the disadvantage of increased leakage current.
Furthermore, in the actual manufacturing process of semiconductor devices, the process of processing the interlayer insulating film using RIE (Reactive Ion Etching) is often used, and there is a problem that the dielectric constant of the film increases during this RIE. The problem of damage to the interlayer insulating film caused by the hydrofluoric acid-based chemical solution used in the

Method used

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  • Material for forming silicon-containing film, and silicon-containing insulating film and method for forming the same
  • Material for forming silicon-containing film, and silicon-containing insulating film and method for forming the same
  • Material for forming silicon-containing film, and silicon-containing insulating film and method for forming the same

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 2

[0126] A three-necked flask with a condenser and a dropping funnel was dried under reduced pressure at 50°C. Then, 20 g of magnesium and 500 ml of THF were added to the flask, and 25 g of (chloromethyl)trimethylsilane was added while stirring at room temperature. After stirring for a while and confirming heat generation, 55 g of (chloromethyl)trimethylsilane was added from the dropping funnel over 30 minutes. After completion of the dropwise addition, after confirming that the liquid temperature had returned to room temperature, a mixed solution of 250 ml of THF and 258 g of vinyltrimethoxysilane was added to the flask, followed by heating to reflux at 70° C. for 6 hours to complete the reaction. After the reaction solution was cooled to room temperature, the generated magnesium salt and unreacted magnesium were filtered off, and the filtrate was fractionally distilled to obtain 80 g of vinyldimethoxysilane containing [(trimethylsilyl)methyl]vinyldimethoxysilane (yield: Compo...

Synthetic example 3

[0128] A three-necked flask with a condenser and a dropping funnel was dried under reduced pressure at 50°C. Then, 20 g of magnesium and 500 ml of THF were added to the flask, and 25 g of (chloroethyl)triethylsilane was added while stirring at room temperature. After stirring for a while and confirming heat generation, 91 g of (chloroethyl)triethylsilane was added from the dropping funnel over 30 minutes. After completion of the dropwise addition, after confirming that the liquid temperature had returned to room temperature, a mixed solution of 250 ml of THF and 375 g of ethyltriethoxysilane was added to the flask, followed by heating and reflux at 70° C. for 6 hours to complete the reaction. After the reaction solution was cooled to room temperature, the generated magnesium salt and unreacted magnesium were filtered off, and the filtrate was fractionally distilled to obtain 113 g of [(triethylsilyl) ethyl] ethyldiethoxysilane (yielding Composition C (confirmed by GC method) ...

Embodiment 1

[0135] Using a plasma CVD apparatus PD-220N manufactured by SAMCO, under the conditions of composition A gas flow rate 25 (sccm), Ar gas flow rate 3 (sccm), RF power 250W, substrate temperature 380°C, and reaction pressure 10 Torr, adopt By the plasma CVD method, a silicon-containing film (1-1) of 0.5 μm is formed on a silicon substrate.

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Abstract

Disclosed is a material for forming a silicon-containing film, which contains at least one organosilane compound represented by the following general formula (1). (In the formula, R1-R6 may be the same or different and represent a hydrogen atom, an alkyl group having 1-4 carbon atoms, a vinyl group, a phenyl group, a halogen atom, a hydroxy group, an acetoxy group, a phenoxy group or an alkoxy group, and at least one of R1-R6 represents a halogen atom, a hydroxy group, an acetoxy group, a phenoxy group or an alkoxy group; and n represents an integer of 0-3).

Description

technical field [0001] The present invention relates to a material for forming a silicon-containing film, a silicon-containing insulating film and a method for forming the same. Background technique [0002] In recent years, ultra-large-scale semiconductor integrated circuits (ULSI) have been eagerly desired for further high-speed processing in order to cope with the increased amount of information processing and the complexity of functions. The speedup of ULSI is realized by the miniaturization and high integration of components in the chip, and the multilayering of the film. However, with the miniaturization of components, wiring resistance and parasitic capacitance between wirings increase, and wiring delay becomes the dominant factor of overall signal delay of the device. In order to avoid this problem, the introduction of low-resistivity wiring material and low dielectric constant (Low-k) interlayer insulating film material has become an essential technology. [0003]...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07F7/18C09D5/25C09D183/06C23C16/42H01L21/316
CPCH01L21/31633C08G77/50C09D4/00C07F7/184H01L21/02274H01B3/46C23C16/56C07F7/1844C07F7/1868H01L21/02216H01L21/02126C23C16/401C07F7/1804C08G77/00C08G77/04
Inventor 中川恭志野边洋平加藤仁史石附健二小久保辉一
Owner JSR CORPORATIOON
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