Material for forming silicon-containing film, and silicon-containing insulating film and method for forming the same
A silicon-containing film and organosilane technology, applied in plastic/resin/wax insulators, organic insulators, chemical instruments and methods, etc., can solve the problems of high hygroscopicity of insulating films, increased film dielectric constant, and increased leakage current. Achieve high process resistance and excellent mechanical strength
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Synthetic example 2
[0126] A three-necked flask with a condenser and a dropping funnel was dried under reduced pressure at 50°C. Then, 20 g of magnesium and 500 ml of THF were added to the flask, and 25 g of (chloromethyl)trimethylsilane was added while stirring at room temperature. After stirring for a while and confirming heat generation, 55 g of (chloromethyl)trimethylsilane was added from the dropping funnel over 30 minutes. After completion of the dropwise addition, after confirming that the liquid temperature had returned to room temperature, a mixed solution of 250 ml of THF and 258 g of vinyltrimethoxysilane was added to the flask, followed by heating to reflux at 70° C. for 6 hours to complete the reaction. After the reaction solution was cooled to room temperature, the generated magnesium salt and unreacted magnesium were filtered off, and the filtrate was fractionally distilled to obtain 80 g of vinyldimethoxysilane containing [(trimethylsilyl)methyl]vinyldimethoxysilane (yield: Compo...
Synthetic example 3
[0128] A three-necked flask with a condenser and a dropping funnel was dried under reduced pressure at 50°C. Then, 20 g of magnesium and 500 ml of THF were added to the flask, and 25 g of (chloroethyl)triethylsilane was added while stirring at room temperature. After stirring for a while and confirming heat generation, 91 g of (chloroethyl)triethylsilane was added from the dropping funnel over 30 minutes. After completion of the dropwise addition, after confirming that the liquid temperature had returned to room temperature, a mixed solution of 250 ml of THF and 375 g of ethyltriethoxysilane was added to the flask, followed by heating and reflux at 70° C. for 6 hours to complete the reaction. After the reaction solution was cooled to room temperature, the generated magnesium salt and unreacted magnesium were filtered off, and the filtrate was fractionally distilled to obtain 113 g of [(triethylsilyl) ethyl] ethyldiethoxysilane (yielding Composition C (confirmed by GC method) ...
Embodiment 1
[0135] Using a plasma CVD apparatus PD-220N manufactured by SAMCO, under the conditions of composition A gas flow rate 25 (sccm), Ar gas flow rate 3 (sccm), RF power 250W, substrate temperature 380°C, and reaction pressure 10 Torr, adopt By the plasma CVD method, a silicon-containing film (1-1) of 0.5 μm is formed on a silicon substrate.
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