Preparation method of boron nitride nano-tube

A technology of boron nitride nanotubes and compounds, which is applied in the field of preparation of boron nitride nanotubes, can solve the problems of low purity of boron nitride nanotubes and unfavorable large-scale preparation of boron nitride nanotubes, and achieve good mechanical strength and preparation The effect of simple process and low energy consumption
CN101786884AInactive Publication Date: 2010-07-28WUHAN INSTITUTE OF TECHNOLOGY
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
WUHAN INSTITUTE OF TECHNOLOGY
Publication Date
2010-07-28
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a preparation method of a boron nitride nano-tube, comprising the steps of: leading inorganic porous ceramic material and ammonia to have ammoniation reaction for 5-24h at 800-1200 DEG C, and obtaining crude product of the boron nitride nano-tube, wherein the element mole ratio in the inorganic porous ceramic material is Mg: Fe: B: O= 1: (0.10-1.65): (0.33-1.95): (0.5-5); and separating and purifying the obtained crude product, and obtaining the boron nitride nano-tube. The preparation method has the advantages that (1) batch preparation of the boron nitride nano-tube product can be realized, the yield is more than 80%, and the purity is about 85%; the preparation technique is simple, the power consumption is lower, and the method is suitable for industrial batch production; and (2) the adopted inorganic porous ceramic material has good mechanical strength at higher temperature and can be taken as filler, and compared with other powder or block raw material, the inorganic porous ceramic material is more beneficial to preparing the boron nitride nano-tube by gas-solid phase reaction.
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Description

technical field

[0001] The invention relates to the field of nanomaterial preparation, in particular to a method for preparing boron nitride nanotubes. Background technique

[0002] Boron nitride nanotubes have a similar structure to carbon nanotubes. In 1994, Rubio et al. predicted the existence of boron nitride nanotubes theoretically. In 1995, Chopra et al. successfully synthesized boron nitride nanotubes, thus opening the Prelude to the study of boron nanotubes. Boron nitride nanotubes have excellent chemical stability and heat resistance. Theoretical and experimental studies have shown that they are wide-gap semiconductors, and their electrical properties are not affected by their nanotube diameter and chirality. Boron nitride nanotubes also have high toughness and high strength comparable to carbon nanotubes, and can be used for reinforcement, toughening and modification of materials. The unique properties of boron nitride nanotubes have important application value i...

Claims

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