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Low-temperature-doped luminescent aluminum nitride thin film and preparation method thereof

A technology of aluminum nitride and thin film, which is applied in the field of low-temperature doped luminescent aluminum nitride thin film and its preparation, can solve the problems of large particle pollution of arc ion plating thin film, and achieve the effect of easy operation and simple preparation process

Inactive Publication Date: 2011-12-28
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the arc ion plating film is basically not used for depositing AlN film due to the presence of large particle contamination.

Method used

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  • Low-temperature-doped luminescent aluminum nitride thin film and preparation method thereof
  • Low-temperature-doped luminescent aluminum nitride thin film and preparation method thereof
  • Low-temperature-doped luminescent aluminum nitride thin film and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0028] AIP---01 type multi-arc ion coating machine is adopted, and a magnetic filter device is attached to the coating machine. Both the coating machine and the magnetic filtering device can be purchased from the market, and the magnetic filtering device is manufactured by the Institute of Low Energy Nuclear Physics of Beijing Normal University; The multi-arc ion coating machine is designed and manufactured by Shenyang Kehang Surface Engineering Research and Development Center; the substrate used is quartz glass, which is relatively easy to buy from the market; the mosaic target used is a cylinder with a diameter of 100mm and a height of 45mm Three blind holes with a diameter of 12mm and a depth of 10mm are machined on the surface of the pure aluminum target surface at intervals of 120 degrees at a distance of 25mm from the center of the target surface by machining, and then pure Cr rods are embedded in them in vacuum , the hole axis is an interference fit, and finally the inla...

Embodiment 2

[0035]AIP---01 type multi-arc ion coating machine is adopted, and a magnetic filter device is attached to the coating machine. Both the coating machine and the magnetic filtering device can be purchased from the market, and the magnetic filtering device is manufactured by the Institute of Low Energy Nuclear Physics of Beijing Normal University; The multi-arc ion coating machine is designed and manufactured by Shenyang Kehang Surface Engineering Research and Development Center; the substrate used is quartz glass, which is relatively easy to buy from the market; the mosaic target used is cylindrical with a diameter of 100mm and a height of 45mm. On the pure aluminum target surface, three blind holes with a diameter of 14.4mm and a depth of 20mm are machined at a distance of 25mm from the center of the target surface at intervals of 120 degrees by machining, and then pure Cu rods are embedded in them in vacuum , the hole shaft is an interference fit, and finally the inlaid target ...

Embodiment 3

[0042] AIP---01 type multi-arc ion coating machine is adopted, and a magnetic filter device is attached to the coating machine. Both the coating machine and the magnetic filtering device can be purchased from the market, and the magnetic filtering device is manufactured by the Institute of Low Energy Nuclear Physics of Beijing Normal University; The multi-arc ion coating machine is designed and manufactured by Shenyang Kehang Surface Engineering Research and Development Center; the substrate used is N-type (100) silicon, which is relatively easy to buy from the market; the pure Cr embedded pure Al target used is in diameter On a cylindrical pure aluminum target surface with a diameter of 100mm and a height of 45mm, three blind holes with a diameter of 12mm and a depth of 10mm are machined at a distance of 25mm from the center of the target surface every 120 degrees in the radial direction by machining. The pure Cr rods are inlaid in the vacuum, and the hole axis is an interfere...

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Abstract

The invention discloses a low-temperature-doped luminescent aluminum nitride thin film and a preparation method thereof. The method comprises the following steps: preparing a mosaic target, and placing the mosaic target on a magnetic filtration electric-arc-plating target; chemically cleaning the surface of a matrix; placing the matrix into an electric-arc ion plating machine, and vacuumizing until the background vacuum degree is less than 3.0*10-3Pa; adding bias voltage of -800V; starting a curved arc magnetic filter and the magnetic filtration electric-arc-plating target to perform argon arc plasma bombardment cleaning on the matrix; maintaining current of a magnetic filtration tube, current of the electric-arc target and duty cycle, regulating and controlling the bias voltage to -100 to -400V, introducing nitrogen, and film-coating for 30-90 minutes; and switching off the magnetic filtration electric-arc-plating target and the curved arc magnetic filter, and then taking out a sample to obtain the doped luminescent aluminum nitride thin film. During the preparation process, the temperature of the sample is not more than 180 DEG C, and diffusion heat treatment is not required after deposition. The invention has simple preparation process and easy operation, and electrical and mechanical automatic control can be used in the film-coating course.

Description

technical field [0001] The invention belongs to the technical field of photoluminescent thin films, in particular to a low-temperature doped luminous aluminum nitride thin film and a preparation method thereof. Background technique [0002] Aluminum nitride (AlN) has a very wide band gap (6.2eV), which is beneficial to the preparation of luminescent materials for blue light and ultraviolet light with a larger band gap. Although various methods of preparing thin films can be used to prepare AlN, the current preparation of luminescent AlN thin films is mainly concentrated in some processes with low ionization rates, such as magnetron sputtering, pulsed laser sputtering and chemical vapor deposition. (CVD) method, etc., in which the doped AlN film prepared by chemical vapor deposition method, due to the high deposition temperature, the doping element can form an effective diffusion during the deposition process and become a luminescent center, and emit light directly after depo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/26
Inventor 邱万奇刘仲武孙歌余红雅钟喜春曾德长蔡明
Owner SOUTH CHINA UNIV OF TECH
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