Preparation method of aluminium-nitrogen co-doped silicon carbide absorbing material

Abstract

The invention provides a preparation method of an aluminium-nitrogen co-doped silicon carbide absorbing material. The method comprises the following steps: selecting initial reaction raw materials of silicon powder with a granularity of 200-400 mesh, carbon black with a granularity of 20-60nm, and ammonium chloride 0.5% -5% of gross weight of the silicon powder and the carbon black; carrying out ball milling on the raw materials for 2-4h; after the ball milling, adding aluminium powder 0.5-10% of gross weight of the silicon powder and the carbon black and tetrafluoroethylene powder 1%-20% of gross weight of the silicon powder and the carbon black into the raw materials for a second ball milling; after the second ball milling, sieving the raw materials with a 60 mesh screen, and disposing the materials in a graphite crucible; disposing the graphite crucible in a high pressure container for vacuum-pumping scrubbing, and filling in nitrogen of 0.5-5Mpa; carrying out self-propagating hightemperature synthesis reaction by an electric ignition; carrying out a subsequent processing on reaction synthesis, and removing impurities thereof. The preparation method of the aluminium-nitrogen co-doped silicon carbide absorbing material provided by the present invention has a short production period, and simple equipment and technology; and controllable doping can be realized.

Description

Technical field [0001] The invention relates to the field of preparation of inorganic non-metallic materials, in particular to a preparation method of aluminum-nitrogen co-doped silicon carbide wave absorbing material. Background technique [0002] Silicon carbide (SiC) is an ideal new high-temperature absorbing material. It has excellent properties such as low density, high temperature resistance, good wear resistance, high thermal stability, and large thermal conductivity. It is used in aerospace, defense, electronics, etc. The field has a wide range of applications. In recent years, electromagnetic pollution caused by electronic and communication systems has not only severely affected human health, but also caused hundreds of millions of dollars in economic losses worldwide each year. More importantly, in the military field, the research on silicon carbide in the field of electromagnetic shielding materials has important research value and application prospects. However, sil...

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Problems solved by technology

[0004] However, at present, people mostly use high-temperature heat treatment or laser synthesis to obtain nitrogen or aluminum-doped silicon carbide nanopowders. The existing problems are complex equipment, long production cycle, cumbersome preparation process and high cost.

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