Preparation method of aluminium-nitrogen co-doped silicon carbide absorbing material

A wave-absorbing material and co-doping technology, which is applied in the field of preparation of inorganic non-metallic materials, can solve the problems of cumbersome preparation process, long production cycle and complicated equipment, and achieve the effect of high purity, short production cycle and simple equipment

Inactive Publication Date: 2011-10-05
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, at present, people mostly use high-temperature heat treatment or laser synthesis to obtain nitrogen or aluminum-doped sili

Method used

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  • Preparation method of aluminium-nitrogen co-doped silicon carbide absorbing material
  • Preparation method of aluminium-nitrogen co-doped silicon carbide absorbing material
  • Preparation method of aluminium-nitrogen co-doped silicon carbide absorbing material

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0038] Reference figure 1 , Showing an embodiment of the preparation method of the aluminum-nitrogen co-doped silicon carbide absorbing material of the present invention, including the following steps:

[0039] Step 101, select silicon powder, carbon black and ammonium chloride (NH 4 Cl) is the starting material for the reaction, the particle size of the silicon powder is 200-400 mesh, the particle size of the carbon black is 20-60 nm, and the amount of ammonium chloride is 0.5% to 5% of the total weight of the silicon powder and the carbon black.

[0040] Among them, the purity of silicon powder and carbon black can be selected according to the actual situation. In order to make the reaction easier and the subsequent products have fewer impurities, the purity needs to be relatively high. In the present invention, the purity is selected to be 99.0% or more. Silicon fume and carbon black are used as starting materials for the reaction.

[0041] Step 102: Ball mill the above reaction s...

Example Embodiment

[0053] Example one

[0054] Put 140 grams of 250 mesh silicon powder, 60 grams of 50 nm carbon black and 2 grams of ammonium chloride in a high-energy ball mill for 3 hours. The ball milling medium is silicon carbide balls. Then add 1 g of aluminum (Al) powder and 12 g of polytetrafluoroethylene (PTFE) powder, and mix them evenly for 10 minutes. Pass the uniformly mixed powder through a 60-mesh sieve, and take 100 grams and place it in a graphite crucible. Place the crucible containing the processed powder in a high-pressure container, perform 3 times of vacuuming and purging, and then fill it with 3MPa high-purity nitrogen, use tungsten wire to ignite and ignite the combustion synthesis reaction. After the reaction is completed, The combustion products are cooled with the furnace in a nitrogen atmosphere. The combustion synthesis product is heated to 600°C in air and kept for 2 hours. Then, the products were pickled with 15% hydrochloric acid and 10% hydrofluoric acid, soaked...

Example Embodiment

[0057] Example two

[0058] Put 136.5 grams of 300 mesh silicon powder, 60 grams of 50 nm carbon black and 1.965 grams of ammonium chloride in a high-energy ball mill for 3 hours. The milling medium is silicon carbide balls. Then add 3.93 grams of aluminum (Al) powder and 11.79 grams of polytetrafluoroethylene (PTFE) powder, and mix them evenly for 10 minutes. Pass the uniformly mixed powder through a 60-mesh sieve, and take 100 grams and place it in a graphite crucible. Place the crucible containing the processed powder in a high-pressure container, perform 3 times of vacuuming and purging, and then fill it with 3MPa high-purity nitrogen, use tungsten wire to ignite and ignite the combustion synthesis reaction. After the reaction is completed, The combustion products are cooled with the furnace in a nitrogen atmosphere. The combustion synthesis product is heated to 600°C in air and kept for 2 hours. Then, the products were pickled with 15% hydrochloric acid and 10% hydrofluor...

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Abstract

The invention provides a preparation method of an aluminium-nitrogen co-doped silicon carbide absorbing material. The method comprises the following steps: selecting initial reaction raw materials of silicon powder with a granularity of 200-400 mesh, carbon black with a granularity of 20-60nm, and ammonium chloride 0.5% -5% of gross weight of the silicon powder and the carbon black; carrying out ball milling on the raw materials for 2-4h; after the ball milling, adding aluminium powder 0.5-10% of gross weight of the silicon powder and the carbon black and tetrafluoroethylene powder 1%-20% of gross weight of the silicon powder and the carbon black into the raw materials for a second ball milling; after the second ball milling, sieving the raw materials with a 60 mesh screen, and disposing the materials in a graphite crucible; disposing the graphite crucible in a high pressure container for vacuum-pumping scrubbing, and filling in nitrogen of 0.5-5Mpa; carrying out self-propagating hightemperature synthesis reaction by an electric ignition; carrying out a subsequent processing on reaction synthesis, and removing impurities thereof. The preparation method of the aluminium-nitrogen co-doped silicon carbide absorbing material provided by the present invention has a short production period, and simple equipment and technology; and controllable doping can be realized.

Description

Technical field [0001] The invention relates to the field of preparation of inorganic non-metallic materials, in particular to a preparation method of aluminum-nitrogen co-doped silicon carbide wave absorbing material. Background technique [0002] Silicon carbide (SiC) is an ideal new high-temperature absorbing material. It has excellent properties such as low density, high temperature resistance, good wear resistance, high thermal stability, and large thermal conductivity. It is used in aerospace, defense, electronics, etc. The field has a wide range of applications. In recent years, electromagnetic pollution caused by electronic and communication systems has not only severely affected human health, but also caused hundreds of millions of dollars in economic losses worldwide each year. More importantly, in the military field, the research on silicon carbide in the field of electromagnetic shielding materials has important research value and application prospects. However, sil...

Claims

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Application Information

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IPC IPC(8): C04B35/622C04B35/565
Inventor 金海波李丹曹茂盛豆艳坤郭挺
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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