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A kind of preparation method of nanocomposite superhard film

A nano-composite, thin-film technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of poor silicon conductivity, complex smelting and processing technology, and high cost

Inactive Publication Date: 2011-12-14
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Preparation of nc-MeN / α-Si 3 N 4 The Si content in the nanocomposite superhard film is a crucial factor. The silicon source can be provided by the cathode arc. Since the cathode arc requires the target to have good conductivity and thermal expansion capacity, and the conductivity of silicon is poor, even if it is used High conductivity silicon, its own cost is high, and its poor thermal expansion ability will also lead to cracking of the target
If Me-Si alloy or composite target is used, the smelting and processing technology of such alloy or composite target is complicated, and the cost is high. At the same time, the Me / Si ratio of the target material is fixed, and the film composition is difficult to flexibly control

Method used

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  • A kind of preparation method of nanocomposite superhard film

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Nanocrystalline TiN / Amorphous Si 3 N 4 Preparation of nanocomposite films:

[0018] (1) After the substrate is degreased and polished, put it into acetone and ethanol for ultrasonic cleaning, take it out, dry it with nitrogen, put it in a vacuum chamber, and vacuum it to 5.0×10 -4 Pa;

[0019] (2) Feed N from the source of the magnetic filter cathode 2 / Ar mixed gas, where Ar flow rate is 7.0sccm, N 2 The flow rate is 21.0sccm, and the cathode high-purity Ti target (purity 99.96%) is struck to generate arc discharge. The cathode current is 70A, the source coil current is 0.25A, the magnetic filter coil current is 3.0A, and the exit coil current is 1.5A to extract the ion beam. Deposit a 50nm thick TiN film on the substrate with a working pressure of 0.2Pa;

[0020] (3) Then the Ar ion beam is generated by the Kaufman ion gun, the Ar flow rate is 8.0sccm, the screen electrode voltage is 1600V, the acceleration voltage is 120V, the cathode discharge current is 10A, t...

Embodiment 2

[0023] Nanocrystalline CrN / Amorphous Si 3 N 4 Preparation of nanocomposite films:

[0024] (1) After the substrate is degreased and polished, put it into acetone and ethanol for ultrasonic cleaning, take it out, dry it with nitrogen, put it in a vacuum chamber, and vacuum it to 5.0×10 -4 Pa;

[0025] (2) Feed N from the source of the magnetic filter cathode 2 / Ar mixed gas, where Ar flow rate is 7.0sccm, N 2 The flow rate is 21.0sccm, and the cathode high-purity Cr target (purity 99.96%) is struck to generate arc discharge. The cathode current is 65A, the source coil current is 0.5A, the magnetic filter coil current is 3.0A, and the outlet coil current is 1.5A to extract the ion beam. Deposit an 80nm thick CrN film on the substrate with a working pressure of 0.2Pa;

[0026] (3) Then the Ar ion beam is generated by the Kaufmann ion gun, the Ar flow rate is 8.0sccm, the screen electrode voltage is 1700V, the accelerating voltage is 120V, the cathode discharge current is 10A...

Embodiment 3

[0029] Nanocrystalline ZrN / Amorphous Si 3 N 4 Preparation of nanocomposite films:

[0030] (1) After the substrate is degreased and polished, put it into acetone and ethanol for ultrasonic cleaning, take it out, dry it with nitrogen, put it in a vacuum chamber, and vacuum it to 5.0×10 -4 Pa;

[0031] (2) Feed N from the source of the magnetic filter cathode 2 / Ar mixed gas, where Ar flow rate is 7.0sccm, N 2 The flow rate is 21.0sccm, and the cathode high-purity Zr target (purity 99.96%) is struck to generate an arc discharge. The cathode current is 70A, the source coil current is 0.5A, the magnetic filter coil current is 3.0A, and the exit coil current is 1.5A to extract the ion beam. Deposit a 100nm thick ZrN film on the substrate, the working pressure is 0.2Pa;

[0032] (3) Then the Ar ion beam is generated by the Kaufman ion gun, the Ar flow rate is 8.0sccm, the screen electrode voltage is 1600V, the acceleration voltage is 120V, the cathode discharge current is 10A, ...

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Abstract

The invention belongs to the field of film material preparation, and in particular relates to a method for preparing a nanocomposite superhard film. The method first deposits MeN on a substrate by means of magnetic filter arc ion plating to form a 50-nanometer-thick MeN film as a transition layer, and then continues MeN is deposited by magnetic filtered arc ion plating, and Si3N4 is co-deposited on the substrate by ion beam sputtering. During the co-deposition process, a negative DC bias of -100V is applied to the substrate to obtain nanocrystalline MeN / amorphous Si3N4 Nanocomposite superhard film. The invention combines magnetic filter arc ion plating with ion beam sputtering, utilizes the characteristics of similar working pressures of the two to make up for each other's deficiencies, and obtains nanocrystalline MeN / amorphous Si3N4 nanocomposite superhard films with good film base binding force.

Description

technical field [0001] The invention belongs to the field of film material preparation, and in particular relates to a preparation method of a nanocomposite superhard film. Background technique [0002] Some harsh actual industrial and mining conditions such as high temperature, impact, heavy load, and strong corrosive media have made the research and development of surface technology develop rapidly in recent years, and have become an eye-catching emerging field in the scientific and technological circles. As an effective means to improve the surface properties of workpieces, hard thin film materials have attracted much attention from the material industry. Professor S. Veprek first proposed the design concept of nanocrystalline (nc) / amorphous (α) composite structure, the general formula is expressed as nc-MeN / α-Si 3 N 4 [0003] (Me=Ti, Cr, Zr, V). Its microstructure is generally nc-MeN nano-sized crystal phase uniformly embedded in α-Si 3 N 4 In the amorphous frame...

Claims

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Application Information

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IPC IPC(8): C23C14/22C23C14/06
Inventor 张玉娟杨莹泽翟玉浩张平余
Owner HENAN UNIVERSITY
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