Silicon nano wire based sensor having selective fluorescence response on nitric oxide

A silicon nanowire, nitric oxide technology, applied in the field of fluorescent chemical sensors, can solve problems such as hydrolysis, difficult synthesis, easy photobleaching, etc.

Inactive Publication Date: 2012-04-18
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods have some limitations in use. The most widely used reagents are diaminofluorescein derivatives, which not only react with nitric oxide, but also other molecules released in the cell.
And most of the reported imaging reagents need to be used in organic solvents, which may cause cell pathological changes
Other limitations of these imaging reagents include susceptibility to photobleaching, difficulty in synthesis, and the need for hydrolysis during use

Method used

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  • Silicon nano wire based sensor having selective fluorescence response on nitric oxide
  • Silicon nano wire based sensor having selective fluorescence response on nitric oxide
  • Silicon nano wire based sensor having selective fluorescence response on nitric oxide

Examples

Experimental program
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Effect test

Embodiment 1

[0036] 1) At room temperature, grind the silicon monoxide in a mortar and put it in a porcelain boat, and place the porcelain boat in the middle of the quartz tube. Before heating, the system is vacuumed to 10 with a mechanical pump and a molecular pump. -3 Pa, followed by a flow rate of 25 sccm (mL / min) into the mixed gas of argon (accounting for 95% of the mixed gas volume) and hydrogen (accounting for 5% of the mixed gas volume), when the pressure is stable at 10 3 At Pa, the system began to heat up. The system rises to 300°C at 10°C / min, and then to 800°C at 20°C / min. At this time, close the gas valve and pump gate, keep it for 10 minutes and continue to heat up to 1350°C, react at 1350°C for 5 hours, and the reaction is over After that, cool to room temperature naturally, and collect the products on both sides of the porcelain boat. The silicon nanowires obtained are single crystal silicon wires with a diameter of 15-20 nm in the center and a layer of amorphous silicon oxide...

Embodiment 2

[0047] 1) Take a 2cm×0.5cm (100) silicon wafer and clean it with ethanol, acetone, and distilled water for 10 minutes; then soak the silicon wafer in an HF aqueous solution with a mass concentration of 5% for 15 minutes; After taking it out, put it in a concentration of 5mmol / L AgNO 3 And 4.8mol / L HF mixed aqueous solution; after soaking for 2.5 minutes, take it out and put it into 10mL containing 4.8mol / L HF and 0.2mol / LH 2 O 2 In the mixed aqueous solution, the system is kept in a water bath at 50°C; after 35 minutes, the silicon wafers are taken out and placed in a mixed solution containing 4.5 mL of concentrated hydrochloric acid (mass concentration of 36%) and 1.5 mL of concentrated nitric acid (mass concentration of 36%); After soaking for 1 hour, take out the silicon wafer, rinse it with distilled water, and place it in a watch glass to dry naturally to obtain a silicon nanowire array composed of silicon nanowires. The silicon nanowires have a diameter of 100-200nm and a l...

Embodiment 3

[0056] 1) At room temperature, grind the silicon monoxide in a mortar and put it in the porcelain boat, and place the porcelain boat in the middle of the quartz tube. Before heating, the system will be vacuumed to 10 with a mechanical pump and a molecular pump. -3 Pa, followed by a flow rate of 25 sccm (mL / min) into the mixed gas of argon (accounting for 95% of the mixed gas volume) and hydrogen (accounting for 5% of the mixed gas volume), when the pressure is stable at 10 3 At Pa, the system began to heat up. The system rises to 300°C at 20°C / min and then to 800°C at 10°C / min. At this time, close the gas valve and pump gate, keep it for 10 minutes and continue to heat up to 1350°C, react at 1350°C for 5 hours, and the reaction is over After that, it is naturally cooled to room temperature, and the products are collected on both sides of the porcelain boat. The silicon nanowires obtained are single crystal silicon wires with a central diameter of 5-15 nm and a layer of amorphous ...

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Abstract

The invention belongs to the field of fluorescence chemical sensor with nanostructure and especially relates to a silicon nano wire based chemical sensor having selective fluorescence response on nitric oxide, and a preparation method and application thereof. According to the invention, silicon nano wire and silicon nano wire array prepared from a chemical vapor deposition method and from a chemical etching method are treated with a surface treatment; then an organic micromolecule substance amino fluorescein is used to carry out covalent modification on the silicon nano wire and the silicon nano wire array to obtain the silicon nano wire based sensor having selective fluorescence response on nitric oxide. The silicon nano wire based chemical sensor having selective fluorescence response on nitric oxide can be used in detection of solution and biosystem.

Description

Technical field [0001] The invention belongs to the field of nano-structured fluorescent chemical sensors, and particularly relates to a silicon nanowire-based chemical sensor with selective fluorescence response to nitric oxide, a preparation method thereof, and application of the chemical sensor. Background technique [0002] In 1987, it was discovered that nitric oxide is released from the endothelium in the body. In the body's immune response, it is an important information transmitter in the cardiovascular system and nervous system. Since then, the physiological role of nitric oxide has attracted the attention of many biologists and chemists. [0003] At present, there are many methods for detecting nitric oxide, mainly electrochemical methods and electron paramagnetic resonance spectroscopy. However, due to the low spatial resolution of the above methods, even more complex instruments are required, which limits its application in cell imaging. However, due to its high sensi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/64
Inventor 师文生苗荣穆丽璇
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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