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Preparation method for porous nano p-CuS/n-CdS compound semiconductor photochemical catalyst

A compound semiconductor and photocatalyst technology, which is applied in the field of photocatalytic materials to achieve the effects of reducing photocatalytic efficiency, reducing photocorrosion, and improving photocatalytic efficiency

Inactive Publication Date: 2013-06-19
NANJING FORESTRY UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no literature report on the method of compounding p-CuS and n-CdS and using sublimable compounds as templates to prepare porous nanometer p-CuS / n-CdS semiconductor photocatalysts. The preparation of CdS opens up a new route with important practical significance

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Raw materials and proportions for preparing porous nanometer p-CuS / n-CdS composite semiconductor photocatalyst:

[0027] Anhydrous copper sulfate: 0.8%

[0028] Anhydrous copper acetate: 0.9%

[0029] Anhydrous cadmium sulfate: 5.0%

[0030] Anhydrous cadmium formate: 5.0%

[0031] Sodium sulfide: 2.0%

[0032] Thiourea: 3.0%

[0033] Triethylamine hydrochloride: 0.1%

[0034] Melamine: 0.2%

[0035] Deionized water: 83.0%

[0036] The process of preparing porous nanop-CuS / n-CdS composite semiconductor photocatalyst: According to the above mass percentage, take half of the total amount of deionized water, add anhydrous copper sulfate, anhydrous copper acetate, anhydrous cadmium sulfate and anhydrous formic acid Cadmium, stirred and dissolved to obtain an aqueous solution of copper salt and cadmium salt, at a frequency of 30KH Z , Under the action of ultrasonic dispersion with a power of 0.6KW, two sulfur compounds, sodium sulfide and thiourea, were added to the ...

Embodiment 2

[0038] Raw materials and proportions for preparing porous nanometer p-CuS / n-CdS composite semiconductor photocatalyst:

[0039] Crystalline copper chloride: 0.9%

[0040] Anhydrous copper formate: 0.7%

[0041] Crystalline cadmium acetate: 16.0%

[0042] Anhydrous cadmium chloride: 9.0%

[0043] Potassium sulfide: 1.0%

[0044] Thioacetamide: 7.5%

[0045] Paraformaldehyde: 0.6%

[0046] Benzoic acid: 0.3%

[0047] Deionized water: 64.0%

[0048] The process of preparing porous nanop-CuS / n-CdS composite semiconductor photocatalyst: According to the above mass percentage, take half of the total amount of deionized water, add crystalline copper chloride, anhydrous copper formate, crystalline cadmium acetate and anhydrous chloride Cadmium, stirred and dissolved to obtain an aqueous solution of copper salt and cadmium salt, at a frequency of 28KH Z 1. Under the action of ultrasonic dispersion with a power of 0.8KW, two sulfur compounds, potassium sulfide and thioacetamide,...

Embodiment 3

[0050] Raw materials and proportions for preparing porous nanometer p-CuS / n-CdS composite semiconductor photocatalyst:

[0051] Anhydrous copper chloride: 0.5%

[0052] Crystalline copper acetate: 0.3%

[0053] Anhydrous cadmium acetate: 22.0%

[0054] Crystalline cadmium tartrate: 1.5%

[0055] Thioformamide: 6.0%

[0056] Sodium thiosulfate: 1.2%

[0057] Hexamethylenetetramine: 0.7%

[0058] Maleic anhydride: 0.6%

[0059] Deionized water: 67.2%

[0060] The process of preparing porous nanop-CuS / n-CdS composite semiconductor photocatalyst: According to the above mass percentage, take half of the total amount of deionized water, add anhydrous copper chloride, crystalline copper acetate, anhydrous cadmium acetate and crystalline cadmium tartrate , stirred and dissolved to obtain an aqueous solution of copper salt and cadmium salt, at a frequency of 40KH Z, Under the action of ultrasonic dispersion with a power of 0.9KW, two sulfur compounds, thioformamide and sodium t...

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Abstract

The invention discloses a preparation method for a porous nano p-CuS / n-CdS compound semiconductor photochemical catalyst. According to mass percents of templates of copper salt, cadmium salt, a sulfocompound and a sublimable compound and deionized water (0.001%-75%): (0.00001%-90%): (0.001%-85%): (0.001%-75%): (0.001%-98%), and sequentially subject to processes of reaction, centrifugal separation, distilled water washing, ultrasonic dispersion, centrifugal separation, ultrasonic treatment, reduced pressure distillation, drying, roasting, natural cooling, grinding and the like, the p-CuS / n-CdScompound semiconductor photochemical catalyst is obtained. On the condition that visible light and sunlight serve as light sources, the p-CuS / n-CdS compound semiconductor photochemical catalyst can be applied to hydrogen production of photocatalytic water splitting and photocatalytic degradation of organic pollutants. The preparation method is simple and practicable in process, small in investment and beneficial for popularization and application.

Description

technical field [0001] The invention relates to a preparation method of a porous nanometer p-CuS / n-CdS composite semiconductor photocatalyst, belonging to the field of photocatalytic materials. Background technique [0002] With the acceleration of the global industrialization process, the sharp increase in energy consumption, the depletion of fossil fuels, the deepening of the oil crisis, environmental crisis and energy crisis, the development and utilization of renewable energy has become a hot spot of global concern. Solar energy is the most abundant energy available to human beings. It is an inexhaustible, inexhaustible, pollution-free, cheap energy that can be used freely and peacefully by all countries in the world. It is also a variety of renewable energy such as biomass energy, wind energy, Ocean energy, water energy and other energy sources. For this reason, the governments of various countries attach great importance to the development and utilization of solar ene...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/043B01J37/34
Inventor 刘福生卢南刘恋恋方婷朱涛李玲王文韬黄华
Owner NANJING FORESTRY UNIV
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