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Microwave device ceramic substrate material and preparation method thereof

A ceramic substrate and microwave device technology, which is applied in the field of microwave device ceramic substrate materials and its preparation, can solve problems such as machinability without consideration, and achieve the effects of dense ceramic particle structure, fine processing, improved structure control, and single crystal phase

Inactive Publication Date: 2013-04-03
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The microwave dielectric ceramic materials currently used are trying their best to pursue their low loss characteristics, but their machinability has never been considered. Therefore, there is an urgent need to develop a microwave dielectric ceramic with simple process, low raw material cost and low loss characteristics, and By controlling the microstructure of microstrip line ceramics, the microstrip line ceramics can be precisely processed to meet the microstrip process and meet the application requirements of the microwave communication industry

Method used

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  • Microwave device ceramic substrate material and preparation method thereof
  • Microwave device ceramic substrate material and preparation method thereof
  • Microwave device ceramic substrate material and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1-7

[0033] first step:

[0034] Accurately weigh the raw materials of the starting material according to the proportions in Table 1, ball mill in deionized water for 6 hours, dry, and then heat at 900-1100°C for 2-4 hours to synthesize Mg 1+x co y TiO 3+x+y .

[0035] Step two:

[0036] Weigh the pre-burned Mg 1+x co y TiO 3+x+y Powder 100g, wet grinding for 4 to 24 hours. Add polyvinyl alcohol aqueous solution to the dried material for granulation, dry press molding under 25MPa pressure, and sinter the green body at 1310-1350°C for 2-3 hours to obtain ceramic substrate materials for microwave devices. The sintering process and properties The test results are shown in Table 2.

[0037] Table 1 Microwave device ceramic substrate material Mg 1+x co y TiO 3+x+y Composition and pre-firing process

[0038]

[0039] Table 2 Microwave device ceramic substrate material Mg 1+x co y TiO 3+x+y process and performance

[0040]

Embodiment 8-18

[0042] Step 1: Mg 1+x co y TiO 3+x+y Synthesis: take 55.62g of basic magnesium titanate, 44.23g of titanium dioxide, and 0.15g of dicobalt trioxide, ball mill in deionized water for 6 hours, dry, and then synthesize Mg at 1000°C for 2 hours. 1.034 co 0.003 TiO 3.037 .

[0043] Step 2: Accurately weigh each raw material according to the ratio in Table 3, and wet grind for 12 hours. Add polyvinyl alcohol aqueous solution to the dried material for granulation, dry press molding under 25MPa pressure, and sinter the green body at 1280-1350°C for 1.5-3 hours to obtain microwave dielectric ceramics. The sintering process and performance test results See Table 4.

[0044] Table 3 Ceramic Substrate Materials for Microwave Devices

[0045]

[0046] Table 4 Ceramic Substrate Materials for Microwave Devices

[0047]

[0048]

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Abstract

The invention relates to a microwave device ceramic substrate material and a preparation method thereof, and belongs to the technical field of electronic materials. The microwave device ceramic substrate material comprises a main crystal phase and a modified additive, wherein the chemical general formula of the main crystal phase is Mg(1+x)CoyTiO(3+x+y), x is more than 0.01 and less than 0.05, y is more than 0.001 and less than 0.01, the modified additive is one or a plurality of materials selected from CeO2, Nb2O5, Nd2O3, ZnO, MnCO3 and SiO2, and the mass of the modified additive is 0.0-4.0%of the total mass of the whole microwave device ceramic substrate material. The preparation method comprises processes of material preparing, ball milling, pelletizing, forming and sintering. The microwave device ceramic substrate material has characteristics of high Q*f value (80000-100000), medium dielectric constant (17-20) and serialization dielectric constant temperature coefficient (0-110),is applicable for preparations of the microwave device substrate materials, and can meet the preparation requirements of the microwave devices (especially the microstrip filter). The method of the present invention has characteristics of simpleness, easy control, environmental protection and low cost.

Description

technical field [0001] The invention belongs to the technical field of electronic materials, and relates to a microwave device ceramic substrate material and a preparation method thereof. Background technique [0002] In recent years, high-frequency microwave technology has been widely and important used in systems such as communication, navigation, satellite, bluetooth, and sensory Internet of Things radio frequency technology. The trend of information technology developing towards high frequency, high power, integration and multi-function is very rapid. In high-frequency microwave circuits, many microwave devices (such as microstrip ceramic filters) need to use ceramic materials as substrates, making ceramic substrate materials for microwave devices increasingly become the key to high-frequency microwave devices, components and complete machine systems. base material. High-frequency microwave devices using ceramic substrate materials usually have performance characterist...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/465C04B35/622C04B35/63
Inventor 唐斌周晓华钟朝位张树人
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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