Nitrogen-faced gallium nitride suede solar cell and fabrication method thereof

Abstract

The invention discloses a nitrogen-side gallium nitride napped-side solar battery and a production method thereof, which mainly solve the problems of the present solar battery that the efficiency is low and the cost is high. The nitrogen-side gallium nitride napped-side solar battery comprises a sapphire substrate (1), aluminum nitride (AlN) buffering layer (2), an extension layer (3), a cathode (4), an organic polymer layer (5) and an anode (6), wherein the AlN buffering layer (2) adopts metal-organic chemical vapor deposition (MOCVD) growth, and the thickness is 150nm to 200nm; the extension layer (3) adopts a nitrogen surface n-GaN grown by the MOCVD with the thickness of 2 to 3 micrometers and the electronic density of 1.0*1017cm<-3> to 2.0*1018cm<-3>, the surface which is contacted with the organic polymer layer (5) is a recess napped surface, the density of the recesses is 1.0*107cm<-2> to 4.0*108cm<-2>, and the depth is 450 nm to 1.5 micrometers; the cathode (4) is formed by depositing titanium (Ti) and aluminum (Al) on the nitrogen side n-GaN layer; the organic polymer layer (5) is formed by spin coating on the surface of the nitrogen side n-GaN layer, and the thickness is 50 to 80nm; and the anode (6) is formed by depositing gold Au on the organic polymer layer (5). The process is simple, the cost is low, the photoelectric conversion efficiency is high, and the nitrogen-side gallium nitrode napped-side solar battery and the production method can be used for the commercial and civil power generation systems.

Description

technical field

[0001] The invention belongs to the technical field of microelectronics, and in particular relates to a solar cell, that is, a gallium nitride textured solar cell on a nitrogen surface. Specifically, a nitrogen-faced n-GaN layer with a crystal orientation of

[0001] is grown on sapphire, and the surface of the nitrogen-faced GaN is textured using a diluted KOH solution, and spin-coated on the textured GaN surface. A layer of organic conductive film forms an excellent Schottky contact to realize photovoltaic characteristics. technical background

[0002] On the one hand, the development of modern industry has increased the demand for energy, causing an energy crisis; on the other hand, a large amount of carbon dioxide gas has been released in the use of conventional energy, leading to a global "greenhouse effect". To this end, countries are trying to get rid of the dependence on conventional energy, and accelerate the development of renewable energy, as a very...

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