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ZnO/enzyme biosensor and preparation method

A biosensor and bioenzyme technology, applied in the direction of material electrochemical variables, can solve the problems of complex process, restricted practicality, poor sensitivity, etc., and achieve the effect of simple preparation process, fast response speed, and abundant raw materials

Inactive Publication Date: 2012-07-18
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the methods for preparing ZnO nanomaterials include hydrothermal, electrochemistry, thermal steaming, sol-gel, etc. These methods are complex in process, demanding on the test environment, poor in repeatability, and the output is small and not suitable for mass production. It is difficult to meet the requirements of ZnO nanomaterials and The need for rapid practical use of devices, and poor sensitivity is another obstacle restricting practical use
Compared with non-porous one-dimensional nanomaterials, porous one-dimensional nanomaterials have a larger specific surface area, so they are more conducive to the improvement of biosensing performance. At present, there is no porous one-dimensional ZnO nanomaterials for the production of biosensors.

Method used

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  • ZnO/enzyme biosensor and preparation method
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  • ZnO/enzyme biosensor and preparation method

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preparation example Construction

[0036] A ZnO / enzyme biosensor preparation method, comprising the steps of:

[0037] Step (1). Cut a silicon dioxide sheet or a glass sheet into a substrate 1 of e×f, and clean the substrate 1 ultrasonically for 30 minutes with anhydrous alcohol. 50 minutes, followed by ultrasonic cleaning with distilled water for 30 50 minutes, then put into the drying box for later use;

[0038] Said e and f are two adjacent sides of the substrate 1, and e is 1 mm 3mm, f is 10mm;

[0039] Step (2). The dried substrate 1 is plated with an electron beam evaporation or magnetron sputtering to form a substrate with a conductive thin film layer 2, and the thickness of the conductive thin film layer 2 is 50 200nm.

[0040] Step (3). The substrate is used for high-voltage electrospinning, and the exposed area at one end of the substrate is a Rectangle I of b, the rest is temporarily covered, high-voltage electrospinning parameters: zinc acetate is dissolved in 10-15 wt% polyvinyl alcohol a...

Embodiment 1

[0049] Step (1). Cut a silicon dioxide sheet or a glass sheet into a substrate 1 of 3 mm×10 mm, and clean the substrate 1 ultrasonically with anhydrous alcohol for 50 minutes, then ultrasonically clean it with distilled water for 50 minutes, and then put it into spare drying box;

[0050] Step (2). Electron beam evaporation or magnetron sputtering is used to coat the dried substrate 1 with a conductive film layer 2 to form a substrate. The thickness of the conductive film layer 2 is 200 nm.

[0051] Step (3). The substrate is used for high-voltage electrospinning, and the exposed area of ​​one end of the substrate is 3 mm Rectangle I of 3mm, the rest is temporarily covered, high-voltage electrospinning parameters: dissolve zinc acetate in 12 wt% polyvinyl alcohol aqueous solution to form a mixed solution, wherein the mass ratio of polyvinyl alcohol to zinc acetate is 1; and the The mixed solution was heated and stirred at 40°C for 30 minutes. During the heating and stirring ...

Embodiment 2

[0056] Step (1). Cut a silicon dioxide sheet or a glass sheet into a substrate 1 of 2 mm×10 mm, and clean the substrate 1 ultrasonically with anhydrous alcohol for 40 minutes, then ultrasonically clean it with distilled water for 40 minutes, and then put it into spare drying box;

[0057] Step (2). Electron beam evaporation or magnetron sputtering is used to coat the dried substrate 1 with a conductive film layer 2 to form a substrate. The thickness of the conductive film layer 2 is 100 nm.

[0058] Step (3). The substrate is used for high-voltage electrospinning, and the exposed area of ​​one end of the substrate is 2 mm Rectangle Ⅰ of 2mm, the rest is temporarily covered, high-voltage electrospinning parameters: dissolve zinc acetate in a 10 wt% polyvinyl alcohol aqueous solution to form a mixed solution, wherein the mass ratio of polyvinyl alcohol to zinc acetate is 0.8; and the The mixed solution was heated and stirred at 50°C for 20 minutes. During the heating and stirr...

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Abstract

The invention discloses a ZnO / enzyme biosensor and preparation method, and aims to solve the problems that the present device and method have complex process, strict requirement for the experimental environment, and poor repeatability. The ZnO / enzyme biosensor includes a supporting base, a conductive thin film layer, an insulation wrapping layer, a ZnO nanometer material layer and bio-enzyme molecules; and the preparation method is realized through the following steps: firstly the conductive thin film layer is evaporated on the supporting base to form a substrate, the ZnO nanometer material layer grows on a rectangle I with area of axb at one end of the substrate, the bio-enzyme molecules are fixed in the ZnO nanometer material layer, the other end of the substrate is reserved for another rectangle II with the area of cxd, and the insulation wrapping layer wraps the middle section of the substrate. According to the invention, the preparation process is simple, and the pollution is avoided, the raw material is abundant and cheap, so that the preparation method is particularly suitable for preparing low-cost ZnO / enzyme biosensors on a large scale.

Description

technical field [0001] The invention belongs to the technical field of enzyme biosensor preparation, in particular to a ZnO / enzyme biosensor and a preparation method. Background technique [0002] ZnO belongs to the third-generation semiconductor material with a wide band gap. For biosensing applications, ZnO nanomaterials have many advantages: high specific surface area, good electrical conductivity, good biocompatibility, non-toxic, chemical stability, and environmental friendliness etc., especially its high isoelectric point of 9.5, which makes the self-assembly and modification of biomolecules on the surface of ZnO structure easier to operate and reliable. The extremely rich morphology of ZnO nanomaterials also provides more flexible design ideas for its application in the field of sensors. These advantages are fully in line with the special requirements of the carrier materials for the construction of biosensors, making them very attractive for applications in the fiel...

Claims

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Application Information

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IPC IPC(8): G01N27/26
Inventor 黄靖云赵明岗叶志镇
Owner ZHEJIANG UNIV
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