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Wet etching method of Mn-Co-Ni-O thermosensitive thin film

A mn-co-ni-o, heat-sensitive film technology, applied in sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve the problems of etching failure and low etching efficiency, and reach the mesa side The eclipse ratio is small, the graphics quality is high, and the effect of ensuring the speed of the reaction

Active Publication Date: 2012-07-18
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It solves the problem of low etching efficiency in the existing dry etching technology, and the problem that the hydrochloric acid hydrogen peroxide formula destroys the photoresist in the wet etching and makes the etching fail

Method used

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  • Wet etching method of Mn-Co-Ni-O thermosensitive thin film
  • Wet etching method of Mn-Co-Ni-O thermosensitive thin film
  • Wet etching method of Mn-Co-Ni-O thermosensitive thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] The concentration of iodide ion and hydrochloric acid was fixed, and the change of corrosion rate under different temperature conditions was investigated.

[0052] Concentrated hydrochloric acid with a mass fraction of 36%, deionized water, and potassium iodide were prepared in a ratio of 3ml:7ml:5g to prepare an etching solution, and etching experiments were carried out in water bath environments at 27°C and 32°C. The etching process is completed within 5 minutes after the etching solution is prepared, and the etching time is 1.5 minutes. Measure the step height with a step meter, and calculate the average etching rate:

[0053] Table 1.c (I - )=3mol L -1 , c(H + )=3mol L -1 Etching rate under different temperature conditions

[0054] temperature(℃)

Embodiment 2

[0056] The fixed concentration of hydrochloric acid is 2mol L -1 , The change of etching rate under different iodide ion concentration conditions.

[0057] Table 2.27°C, H + The concentration is 2mol L -1 different I - Etch rate at concentration

[0058]

Embodiment 3

[0060] Table 3 shows that the solution prepared according to Example 1 is etched after being placed for a specific period of time (2 minutes, 6 minutes, 11 minutes) under the condition of ordinary indoor sunlight and an unsealed etching solution, and the etching rate is obtained. value. Iodide ions in the etching solution are strongly reducing and will be oxidized by oxygen dissolved in the etching solution. This process is faster under light conditions, which affects the reaction rate, so the reaction should be carried out in a dark room.

[0061] Table 3.1-12 minutes of etching rate reduction

[0062]

[0063] figure 1 A schematic flow chart of the specific implementation steps is given. Photoresist patterns were obtained using a microscope ( figure 2 ), the effect of etching solution on photoresist ( image 3 ) and wet etching to complete the final effect ( Figure 4 ).

[0064] figure 2 Two sizes of photoresist strips are shown (200 μm x 100 μm, 500 μm x 700 μm...

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Abstract

The invention discloses a wet etching method of a Mn-Co-Ni-O thermosensitive thin film, which comprises the following steps of firstly performing positive resist lithography using positive photoresist to obtain a required pattern, protecting a required mesa graph by photoresist, secondly subjecting samples to etching by means of an onsite prepared reducibility etching liquid, estimating the required time of etching according to the thickness of sample-cuttings, cleaning with acetone and alcohol after completing etching, and blow-drying the sample-cuttings with dry nitrogen. According to the wet etching method of the Mn-Co-Ni-O thermosensitive thin film, wet etching of Mn-Co-Ni-O thermosensitive materials is achieved. Further, the etching rate is improved by appropriately increasing the temperature and adding an appropriate quantity of hydrochloric acids within tolerance range of the photoresist. Compared with dry etching, the wet etching has the advantages that the efficiency is greatly improved, thermistor edges are orderly, lateral etching ratio is small, and pattern quality is high.

Description

technical field [0001] The patent of the present invention is applicable to a wet etching process of a thermosensitive thin film material, more specifically, it relates to a wet etching of a Mn-Co-Ni-O thermosensitive thin film with a spinel structure. Background technique [0002] The Mn-Co-Ni-O series material is a heat-sensitive material with a high negative temperature coefficient of resistance. This kind of material has excellent characteristics such as broad spectral response, large working temperature range and long-term stability of performance, and has very important applications in uncooled infrared detection. while Mn 1.56 co 0.96 Ni 0.48 o 4 (hereinafter referred to as MCN) has the smallest resistivity of this series of materials, so it occupies an important position in Mn-Co-Ni-O thermally sensitive materials [see literature 1-4]. Hou Yun from the Shanghai Institute of Technical Physics successfully prepared high-quality MCN polycrystalline thin films on ho...

Claims

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Application Information

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IPC IPC(8): H01L21/306H01L31/18
CPCY02P70/50
Inventor 黄志明周炜张雷博侯云吴敬褚君浩
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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