Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Back surface field aluminum conductive slurry used for preparing silicon solar battery, and manufacturing method thereof

A technology for silicon solar cells and conductive paste, which is applied in the manufacture of cables/conductors, conductive materials dispersed in non-conductive inorganic materials, circuits, etc. and other problems to achieve the effect of improving printability, improving photoelectric conversion efficiency, and improving electrical performance

Inactive Publication Date: 2012-10-17
SHANGHAI NEW TIANHE ELECTRONICS MATERIAL
View PDF3 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the current back-field aluminum conductive paste in the prior art has low electrical performance and photoelectric conversion efficiency of the battery, and cannot meet the requirements of no bending of the silicon wafer after sintering, no aluminum beads, smooth surface, no spots, and lead-free , and many other requirements, do not meet the requirements of environmental protection

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0029] 1) Prepare an organic modified solvent, heat and dissolve at a temperature of 70°C-110°C to obtain a transparent organic modified solvent; specifically, prepare an organic modified solvent (mass percentage): ethyl cellulose 5.2%, stearyl alcohol 27.5%, pentaerythritol 4.0%, rosin 1.2%, terpineol 60.9%, additives 1.2%, total 100%. The above materials are mixed in a container, heated in a water bath to 85°C indirectly, and stirred until the solution is transparent and clear.

[0030] 2) Add the silane coupling agent to the above-mentioned modified nano-scale silicon powder at room temperature, and stir well;

[0031] 3) Prepare the wetting and dispersing agent, and fully disperse it under high-speed dispersion conditions at 35°C to obtain a uniform solvent; specifically, the preparation of the wetting and dispersing agent (mass percentage): terpineol 92%, sulfonated castor oil 5% , Dispersant CF 3%, total 100%. The operation process is: add the weighed terpineol to the conta...

Embodiment approach 2

[0044] 1. The preparation of the organic modified solvent is the same as the first embodiment;

[0045] 2. The preparation of the wetting and dispersing agent is the same as the first embodiment;

[0046] 3. Preparation of back field conductive aluminum paste

[0047] The purity of aluminum powder is ≥99.9%, the particle size is 2-4μm, 346.5g, 34.65%

[0048] 9-12μm, 423.5g, 42.35%

[0049] Lead-free glass powder (component Pb-B-Si-Zn), 5.68g, 0.568%

[0050] (Component B-Si-Zn), 8.52g, 0.852%

[0051] Nano silicon powder purity ≥99.99%, 28g, 2.8%

[0052] (Three-high rolling mill to add in the middle process)

[0053] Organic modified solvent, 184.6g, 18.46%

[0054] Wetting and dispersing agent, 3.2g, 0.32%

[0055] Mix according to the above ratio, use a three-roll mill to roll and grind to a fineness of ≤15μm and a viscosity of 20-30Pa·S, then add elemental nanometer silicon powder, and use a three-roll mill to roll and grind to the above-mentioned fine...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle diameteraaaaaaaaaa
particle diameteraaaaaaaaaa
Login to View More

Abstract

The invention provides back surface field aluminum conductive slurry used for preparing a silicon solar battery, and a manufacturing method thereof. The back surface field aluminum conductive slurry has a formula by mass percentage: 65-80% of aluminum powder, 10-19% of organic modifying solvent, 1-5% of lead-free glass powder, 0.1-8% of infiltration dispersant, and 0.1-3% of modifying nanometer level silicon powder, with the total amount being 100%. According to the back surface field aluminum conductive slurry obtained from the above formula, a sintered silicon chip and the aluminum powder and the nanometer level silicon powder in the slurry can form a silicon-aluminum alloy with a firm contact, thereby improving the electrical property and the photoelectric conversion efficiency of the battery, and the sintered silicon chip is required to be non-curved, have no aluminum bead, have a smooth surface, have no spot, have no lead, and meet environmental protection requirements.

Description

Technical field [0001] The invention relates to an electronic paste and a manufacturing method thereof, in particular to a back-field aluminum conductive paste for preparing silicon solar cells and a manufacturing method thereof. Background technique [0002] Electronic paste is one of the basic materials of the electronic information industry that the country will focus on during the "Tenth Five-Year Plan" period, and it is also supported by the National 863 Program or the Torch Project. Back-field aluminum conductive paste is a kind of electronic paste, which is mainly formed by mixing and rolling of conductive phase (aluminum powder), binding phase (glass powder) and organic modified solvent. [0003] However, the current back-field aluminum conductive paste in the prior art has low battery electrical performance and photoelectric conversion efficiency, and cannot satisfy the requirement that the silicon wafer does not bend after sintering, does not contain aluminum beads, has a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/22H01B13/00H01L31/0224
Inventor 张鹏升
Owner SHANGHAI NEW TIANHE ELECTRONICS MATERIAL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products