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A ferroelectric film capacitor based on ohmic contact and its preparation method

A ferroelectric thin-film, ohmic contact technology, applied in the direction of thin-film/thick-film capacitors, multilayer capacitors, fixed capacitor electrodes, etc. and other problems, to achieve the effect of easy extraction and connection, large capacitance density, and high dielectric constant

Active Publication Date: 2015-08-05
NAT CENT FOR ADVANCED PACKAGING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for MIM organic-inorganic composite film capacitors, due to the existence of the organic polymer matrix, it is difficult to increase the dielectric constant, which is usually in the range of 10-50. In addition, the nature of the composite material itself and the limitations of the film-forming technology Limits, making it difficult to reduce the thickness below 10μm, these factors limit the improvement of the capacitance density of this embedded capacitor
Under the small capacitance density, to increase the capacitance value, it is necessary to obtain a larger electrode area. Therefore, composite film capacitors are mainly used in relatively large PCB embedding technology, while they are used in relatively small package substrates. applications are more limited
On the other hand, the low capacitance density of composite film capacitors also determines that its embedded form is a planar co-capacitance method, and it is difficult to realize the wide application of discrete embedded capacitors.

Method used

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  • A ferroelectric film capacitor based on ohmic contact and its preparation method
  • A ferroelectric film capacitor based on ohmic contact and its preparation method
  • A ferroelectric film capacitor based on ohmic contact and its preparation method

Examples

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Embodiment 1

[0053] A ferroelectric thin film capacitor based on ohmic contact, its structure includes from bottom to top: metal aluminum lower electrode, silicon substrate, lead zirconate titanate ferroelectric thin film dielectric layer, metal platinum upper electrode.

[0054] The steps of preparing the above-mentioned ferroelectric thin film capacitor are as follows:

[0055] Step (1) Perform boron doping treatment on the silicon substrate by ion implantation technology, with a doping concentration of 10 19 cm -3 ;

[0056] Step (2) Deposit a lead zirconate titanate ferroelectric film dielectric layer on the silicon substrate obtained in step (1) by sputtering, and its specific composition is Pb(Zr 0.4 Ti 0.6 )O 3 , with a thickness of 0.1 μm;

[0057] Step (3) Forming a metal platinum upper electrode by sputtering on the lead zirconate titanate ferroelectric thin film dielectric layer obtained in step (2), the thickness of which is 150nm;

[0058] Step (4) forming a metal alumin...

Embodiment 2

[0061] A ferroelectric thin film capacitor based on ohmic contact, its structure includes from bottom to top: metal titanium lower electrode, silicon substrate, titanium / platinum conductive buffer layer, barium titanate / strontium titanate multilayer ferroelectric thin film dielectric layer, metal Gold upper electrode.

[0062] The steps of preparing the above-mentioned ferroelectric thin film capacitor are as follows:

[0063] Step (1) Phosphorus doping is performed on the silicon substrate by ion implantation technology, and the doping concentration is 10 18 cm -3 ;

[0064] Step (2) On the silicon substrate obtained in step (1), sputter metal titanium and metal platinum sequentially by sputtering to form a titanium / platinum conductive buffer layer, wherein the thickness of titanium is 30nm, and the thickness of platinum is 100nm;

[0065] Step (3) Alternately deposit barium titanate and strontium titanate on the titanium / platinum conductive buffer layer obtained in step (...

Embodiment 3

[0070] A ferroelectric thin film capacitor based on ohmic contact, its structure includes from bottom to top: metal platinum lower electrode, silicon substrate, nickel / lanthanum nickelate conductive buffer layer, bismuth ferrite ferroelectric thin film dielectric layer, metal copper upper electrode.

[0071] The steps of preparing the above-mentioned ferroelectric thin film capacitor are as follows:

[0072] Step (1) Phosphorus doping is performed on the silicon substrate by ion implantation technology, and the doping concentration is 10 20 cm -3 ;

[0073] Step (2) On the silicon substrate obtained in step (1), sputter nickel and lanthanum nickelate sequentially by sputtering to form a nickel / lanthanum nickelate conductive buffer layer, wherein the thickness of nickel is 30nm, and the thickness of lanthanum nickelate is 50nm;

[0074] Step (3) Depositing a bismuth ferrite ferroelectric thin film dielectric layer on the nickel / lanthanum nickelate conductive buffer layer obt...

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Abstract

The invention relates to a microelectronic device and the field of system-grade encapsulation and integration technology, in particular to an ohmic contact-based ferroelectric thin film capacitor. The ferroelectric thin film capacitor comprises a lower-part electrode, a silicon substrate arranged on the lower-part electrode, a ferroelectric thin film dielectric layer arranged on the silicon substrate, and an upper-part electrode arranged on the ferroelectric thin film dielectric layer, wherein the ohmic contact is formed between the lower-part electrode and the silicon substrate. The invention further provides a preparation method of the ohmic contact-based ferroelectric thin film capacitor. The ferroelectric thin film dielectric medium layer is arranged on the silicon substrate, and the ohmic contact-based ferroelectric thin film capacitor is higher in dielectric constant and lower in thickness, so that the higher capacitance density can be obtained, and a vertical embedded capacitor can be realized; and the ohmic contact is formed between the lower-part electrode and the silicon substrate, so that the electrode is convenient to extract and connect, and the compatibility with the circuit board technology can be improved.

Description

technical field [0001] The invention relates to the technical field of microelectronic devices and system-level packaging integration, in particular to a ferroelectric film capacitor based on ohmic contact and a preparation method thereof. Background technique [0002] For a long time, microelectronic packaging technology has been following the development of integrated circuits, and the emergence of a new generation of integrated circuits will be matched by related microelectronic packaging technologies and processes. However, with the rapid development of electronic information technology today, the feature size of chips has been continuously reduced, causing Moore's Law, which has been leading the development of the IC industry, to encounter unprecedented technical bottlenecks. At the same time, with the emergence and development of microelectronic packaging technologies such as system-in-package (SiP), the role of packaging technology is not only to pursue the developme...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G4/33H01G4/002H01G4/08H01G4/005
Inventor 赵宁王惠娟
Owner NAT CENT FOR ADVANCED PACKAGING CO LTD