Organic electroluminescent device and production method thereof
An electroluminescent device and luminescence technology, which is applied in the fields of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of indistinct content and low contrast
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[0032] see figure 2 , the preparation method of the organic electroluminescent device of an embodiment, comprises the following steps:
[0033] Step S1 , providing a substrate 10 .
[0034] In this embodiment, the substrate 10 is a polymer film. Polymer film materials are polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN), transparent polyimide (PI), cycloolefin copolymer material (COC) or polycarbonate (PC). The surface of the substrate 10 must be flattened and hardened, and the surface hardness reaches 2H-3H (pencil hardness). Substrate 10 is cleaned prior to use. Firstly, the substrate 10 is ultrasonically cleaned in deionized water containing detergent. After cleaning, it is treated with isopropanol and acetone in ultrasonic for 20 minutes, and then dried with nitrogen to obtain a clean substrate.
[0035] Step S2 , forming an anode 20 on the surface of the substrate 10 .
[0036] In this embodiment, the anode 20 is formed by ev...
Embodiment 1
[0051] The structure of the organic electroluminescent device of this embodiment 1: PET / Ag / m-MTDATA / NPB / FIrPic:CBP / Alq 3 / LiF / Ag / Ag:ZnS / CsF / Ag.
[0052] The preparation process of the organic electroluminescent device of this embodiment 1 is as follows:
[0053] The PET film substrate was placed in deionized water containing detergent for ultrasonic cleaning, and after cleaning, it was treated with isopropanol and acetone in ultrasonic for 20 minutes, and then dried with nitrogen. In a vacuum evaporation system, metal Ag with a thickness of 18 nm was deposited on the surface of the PET film as an anode, and then the anode was treated with oxygen plasma for 2 minutes. After the treatment is completed, continue to vapor-deposit a thickness of 30nmm-MTDATA (4,4′,4″-tris(N-3-methylphenyl-N-phenylamino)triphenylamine) on the anode sequentially as a hole injection layer , with a thickness of 40nm NPB (N, N'-diphenyl-N, N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine) as the hole tra...
Embodiment 2
[0055] The structure of the organic electroluminescent device in Example 2: PC / Al / m-MTDATA / NPB / FIrPic:CBP / Alq 3 / LiF / Al / Li:ZnSe / NaF / Al.
[0056] The preparation process of the organic electroluminescent device of this embodiment 2 is as follows:
[0057] After the PC film was cleaned according to the treatment method in Example 1, metal Al with a thickness of 20 nm was deposited on the surface of the PC film as an anode, and then the anode was treated with oxygen plasma for 2 minutes. After the treatment, continue to vapor-deposit m-MTDATA (4,4′,4″-tris(N-3-methylphenyl-N-phenylamino)triphenylamine) with a thickness of 50nm on the anode as hole injection layer with a thickness of 60nm NPB (N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine) as the hole transport layer with a thickness of 10 nm and a doping ratio of 6% of FIrPic:CBP (FIrPic: bis(4,6-difluorophenyl-N, C2) pyridinecarboyl iridium, CBP: 4,4′-N, N -dicarbazolyl-biphenyl) as the doped light-emitting la...
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