Combined machining method for chemistry cluster magneto-rheological of monocrystal silicon carbide wafer

A single crystal silicon carbide and composite processing technology, applied in the field of chemical cluster magnetorheological composite processing and crystal material processing, can solve the problems of low processing efficiency, long processing time, and reduced pressure of processing surface polishing, achieving ingenious conception, Ease of use and improved polishing efficiency

Active Publication Date: 2013-07-10
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Although the above methods can process single crystal silicon carbide wafers, the processing efficiency is relatively low.
It has been verified by the inventor's experiments that the cluster magnetorheological polishing method mentioned in the patent 200610132495.9 can be used to planarize and polish single-crystal silicon carbide wafers well, and obtain a nano-scale smooth surface. Compared with chemical mechanical polishing, This method has high processing efficiency and is an ideal planarized ultra-smooth surface processing technology, but it is still difficult to further improve the polishing efficiency, especially to obtain a

Method used

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  • Combined machining method for chemistry cluster magneto-rheological of monocrystal silicon carbide wafer

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Step 1: Embedding clustered cylindrical magnets 2 with an end surface magnetic field strength of 2000GS on the antimagnetic polishing disc 1 to form a clustered magnetorheological polishing disc;

[0030] Step 2: The carbon surface of the single crystal silicon carbide wafer 5 is bonded on the antimagnetic tool head 3 through an adhesive, and the antimagnetic tool head 3 is installed on the motor spindle; in this embodiment, the antimagnetic tool head 3 can be Stainless steel tool head.

[0031] Step 3: Add 15% SiO in deionized water 2 CPI-SiO with an average particle size of 5um formed by coating carbonyl iron powder (CIP) on the surface of colloidal particle surface directional deposition method 2 Composite particles, diamond abrasive with an average particle size of 3um at a concentration of 10%, glycerin at a concentration of 10%, hydrogen peroxide at a concentration of 15%, and the pH value is adjusted to 10-12 by adding sodium hydroxide to form a chemical magneto...

Embodiment 2

[0038] Step 1: Embedding clustered cylindrical magnets 2 with an end surface magnetic field strength of 2000GS on the antimagnetic polishing disc 1 to form a clustered magnetorheological polishing disc;

[0039] Step 2: bonding the silicon surface of the single crystal silicon carbide wafer 5 to the antimagnetic tool head 3 through an adhesive, and the antimagnetic tool head 3 is installed on the motor spindle;

[0040] Step 3: Add 15% modified CIP composite particles with an average particle size of 5um obtained by modifying the surface of carbonyl iron powder (CIP) with tetraethyl orthosilicate (TEOS) at a concentration of 15% in deionized water. The diamond abrasive with an average particle size of 3um, the concentration of 10% glycerin, and the concentration of 15% hydrogen peroxide, and by adding dilute hydrofluoric acid to adjust the pH value to 2-4, form a chemical magnetorheological fluid 4.

[0041] Step 4: Pour the chemical magnetorheological fluid 4 into the constan...

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Abstract

The invention provides a combined machining method for chemistry cluster magneto-rheological of a monocrystal silicon carbide wafer. The method based on the magneto-rheological effect comprises the following steps: a monocrystal silicon carbide wafer is pasted on an antimagnetic tool head through a binder; the antimagnetic tool head is mounted on a motor spindle, and swings to a certain extent relatively to a polishing disc while the antimagnetic tool head and the polishing disc rotate around respective axial lines of the antimagnetic tool head and the polishing disc; grinding material and acid-base chemical reagent both mixed into magneto-rheological fluid are used as polishing working solution; small grinding heads with the magneto-rheological effect are produced based on a magnetic substance to limit gathered free grinding material; a flexible polishing film is formed by the array combination of multipoint small grinding heads with the magneto-rheological effect based on the cluster action principle; the distance between a workpiece and an antimagnetic polishing disc and the relative rotating speed of the workpiece to the polishing disc can be controlled to reduce surface defect and layer damage of the monocrystal silicon carbide wafer; and a super smooth surface with high quality can be obtained. According to the invention, the method integrates the advantages of high mechanical efficiency of cluster magneto-rheological and chemocatalysis of chemical polishing; and the polishing efficiency is high.

Description

technical field [0001] The invention relates to a chemical cluster magneto-rheological compound processing method for a single-crystal silicon carbide wafer, which belongs to crystal material processing technology. Background technique [0002] As the core of the third-generation semiconductor material, single crystal silicon carbide (SiC) has the characteristics of large band gap, high thermal conductivity, large electron saturation drift rate, high critical breakdown electric field and low relative permittivity, so it is used It is suitable for making high-temperature, high-frequency, radiation-resistant, high-power and high-density integrated electronic devices, especially in extreme conditions and harsh environments. The characteristics of silicon carbide devices far exceed Si devices and GaAs devices. Utilizing its wide band gap, it can also produce blue, green and ultraviolet light-emitting devices and photodetection devices. In addition, silicon carbide is more and m...

Claims

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Application Information

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IPC IPC(8): B24B1/00
Inventor 路家斌潘继生祝江亭阎秋生徐西鹏
Owner GUANGDONG UNIV OF TECH
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