Gas-assisted organic field-effect transistor sensor, and preparation method and applications thereof

A transistor and sensor technology, applied in the field of gas-assisted field effect transistor sensor and its preparation, can solve the problems of increased complexity and achieve the effects of wide versatility, simple preparation process and low cost

Active Publication Date: 2015-04-29
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

(1: Huang, W.; Besar, K.; LeCover, R.; Rule, A.M.; Breysse, P.N.; Katz, H.E.J. Am. Chem. Soc. 2013, 134, 14650-14653.2: See, K.C.; Becknell, A .;Miragliotta,J.;Katz,H.E.Adv.Mater.2007,19,332

Method used

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  • Gas-assisted organic field-effect transistor sensor, and preparation method and applications thereof
  • Gas-assisted organic field-effect transistor sensor, and preparation method and applications thereof
  • Gas-assisted organic field-effect transistor sensor, and preparation method and applications thereof

Examples

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Example Embodiment

[0065] Example 1

[0066] 1) A phosphorus-doped silicon wafer deposited with a silicon dioxide layer with a thickness of 300nm (the thickness of the silicon wafer layer is 300μm, and the doping mass percentage concentration of phosphorus is 1.5%) is subjected to secondary water, ethanol, and acetone ultrasonic waves. , rinsed, and dried with nitrogen, using H 2 SO 4 :H 2 o 2 = 7:3 (volume ratio) mixed solution soaked for 30min, then ultrasonically cleaned with secondary water, put 1 drop of dodecyltrichlorosilane in a petri dish, dried and placed in a vacuum drying oven for processing A self-assembled monolayer of dodecyltrichlorosilane is formed on the surface of the silicon dioxide layer to obtain an insulating layer;

[0067] 2) Spin-coat the naphthalimide derivative NDI(2OD)(4tBuPh)-DTYM2 on the insulating layer obtained in step 1) at a speed of 7000rpm using n-hexane, absolute ethanol, and chloroform for ultrasonication, flushing, and nitrogen blow-drying (see image...

Example Embodiment

[0080] Embodiment 2, the detection of gas by the organic field effect transistor sensor obtained in embodiment 1

[0081] 1) Detection of HCl gas:

[0082] After the organic field effect transistor sensor obtained in Example 1 was placed in a linear working state and reached a stable state, hydrogen chloride (HCl) gas with a concentration of 10 ppm was introduced.

[0083] The response curve of the source-drain current and time of the device exposed to 10ppm hydrogen chloride gas is as follows Figure 4 It can be seen from the figure that the source-drain current of the device drops and recovers rapidly. It can be seen that based on the above-mentioned organic field effect transistor sensor, using ammonia gas as the receiving layer can realize the effective detection of HCl gas and recover quickly, with a detection limit of 10 ppm.

[0084] Follow the same steps as above, replacing the concentration of hydrogen chloride (HCl) gas with 50, 80, 100, 300ppm.

[0085] The resul...

Example Embodiment

[0093] Example 3

[0094] 1) A phosphorus-doped silicon wafer deposited with a silicon dioxide layer with a thickness of 300nm (the thickness of the silicon wafer layer is 300μm, and the doping mass percentage concentration of phosphorus is 1.5%) is subjected to secondary water, ethanol, and acetone ultrasonic waves. , rinsed, and dried with nitrogen, using H 2 SO 4 :H 2 o 2 = 7:3 (volume ratio) mixed solution soaked for 30min, then ultrasonically cleaned with secondary water, put 1 drop of dodecyltrichlorosilane in a petri dish, dried and placed in a vacuum drying oven for processing A self-assembled monolayer of dodecyltrichlorosilane is formed on the surface of the silicon dioxide layer;

[0095] 2) Use n-hexane, absolute ethanol, chloroform to ultrasonically wash, dry with nitrogen, and then place it in a vacuum coating machine at a vacuum degree of 7×10 -4 Under the condition of Pa The speed of vapor deposition of pentacene (see image 3 ) with a thickness of 20nm ...

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Abstract

The invention discloses a gas-assisted organic field-effect transistor sensor, and a preparation method and applications thereof. The organic field-effect transistor sensor comprises a gate electrode layer, an insulating layer, a source electrode, a drain electrode, an organic semiconductor layer and a gas receiving layer; the organic field-effect transistor sensor has a structure of a or b. According to structure a, the insulating layer is arranged on the gate electrode layer; the organic semiconductor layer is arranged on the insulating layer; and the source electrode, the drain electrode and the gas receiving layer are in a same plane, and are all arranged on the organic semiconductor layer. According to structure b, the insulating layer is arranged on the gate electrode layer; the source electrode and the drain electrode are arranged on the insulating layer; the parts of the source electrode, the drain electrode and the insulating layer which are not covered by the source electrode and the drain electrode are covered by the organic semiconductor layer; and the gas receiving layer is arranged on the organic semiconductor layer. The organic field-effect transistor sensor is capable of realizing effective detecting on different gases, can be used for preparation of multi-gas sensors, and possesses significant application values.

Description

technical field [0001] The invention relates to the field of gas detection sensors, in particular to a gas-assisted field effect transistor sensor and its preparation method and application. Background technique [0002] Since the organic field effect transistor (OFET) was reported in 1986 (Tsumura, A.; Koezuka, H.; Ando, ​​T. Appl. Phys. Lett. 1986, 49, 1210), it has been used in flexible active matrix displays, radio frequency tags , electronic paper, sensors and other directions have shown great application prospects, and have received widespread attention and research. In addition to improving the performance of OFET and optimizing the structure of the device, the preparation of multifunctional optoelectronic OFET devices is also an important development direction in the field of organic electronics. In recent years, functionalized organic field-effect transistors have shown great potential application value and achieved great development in the fields of light detectio...

Claims

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Application Information

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IPC IPC(8): G01N27/414
Inventor 狄重安臧亚萍张凤娇孟青朱道本
Owner INST OF CHEM CHINESE ACAD OF SCI
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