Special cleaning solution for high-performance photovoltaic silicon chips

A technology for photovoltaic silicon wafers and cleaning solutions, applied in detergent compositions, detergent compounding agents, climate sustainability, etc., can solve problems such as long penetration time, energy consumption, poor cleaning performance and penetration performance, and achieve reliable The effect of health and safety quality

Inactive Publication Date: 2014-01-22
6 Cites 12 Cited by

AI-Extracted Technical Summary

Problems solved by technology

Due to many reasons behind the technology and technology, the current commercially available cleaning agents for silicon wafers are generally unsatisfactory
First, the cleaning efficiency is low (8S), and the cleaning performance and penetration performance are poor; the second is that the pH value is high (>11), resulting ...
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The invention discloses a special cleaning solution for high-performance photovoltaic silicon chips, which is composed of high-polymer carboxylic acid, organic amine, a surfactant, a complexing agent, a corrosion inhibitor, other assistants and water. The cleaning solution has the advantages of excellent cleaning performance, high use safety and environmental protection.

Application Domain

Organic detergent compounding agentsNon-ionic surface-active compounds +2

Technology Topic

Silicon chipChemistry +5


  • Experimental program(2)

Example Embodiment

[0021] Example 1:
[0022] Mix the following weight components under certain conditions to obtain the product:
[0023] Triethanolamine 3%
[0024] Oleic acid 2%
[0025] Fatty alcohol polyoxyethylene ether (9) 12%
[0026] Sodium sulfonate 5%
[0027] Polyoxyethylene polyoxypropylene ether (12) 7%
[0028] Succinic acid derivative 0.5%
[0029] Disodium ethylenediaminetetraacetic acid 10%
[0030] Butylene glycol 7%
[0031] Deionized water balance.

Example Embodiment

[0032] Example 2:
[0033] A high-performance photovoltaic silicon wafer special cleaning fluid, composed of the following weights:
[0034] Polymer carboxylic acid 2~4% (example 2%, 3%, 4%)
[0035] Organic amine 3~5% (example 2%, 3%, 5%)
[0036] Surfactant 15~40% (example 15%, 25%, 40%)
[0037] Complexing agent 5-15% (examples 5%, 10%, 15%)
[0038] Corrosion inhibitor 0.2~1% (example 0.2%, 0.8%, 1%)
[0039] Other additives 3-12% (examples 3%, 8%, 12%)
[0040] Water margin.
[0041] The polymer carboxylic acid is caprylic acid, n-nonanoic acid, sebacic acid, adipic acid, azelaic acid, lauric acid or oleic acid.
[0042] The organic amine is monoethanolamine, diethanolamine, triethanolamine, isopropanolamine, diisopropanolamine, triisopropanolamine, morpholine, dicyclohexylamine, N-methylmorpholine, 2-amino -2-Methyl-1-propanol or diethylaminoethanol.
[0043] The surfactant is fatty alcohol polyoxyethylene ether sodium sulfate (5-12), fatty alcohol polyoxyethylene ether (5-12), fatty alcohol polyoxyethylene polyoxypropylene ether, polyoxyethylene polyoxypropylene ether ( 9-20), alkyl alcohol amide, fatty alcohol polyoxyethylene ester (5-12) or sulfonate.
[0044] The complexing agent is disodium ethylenediaminetetraacetate, tetrasodium ethylenediaminetetraacetate or sodium tripolyphosphate.
[0045] The corrosion inhibitor is a succinic acid derivative, benzotriazole, tolyltriazole, 1H-1 or 2,4-triazole.
[0046] The other auxiliary agent is ethanol, propanol, butylene glycol, propylene glycol, ethylene glycol monobutyl ether or propylene glycol n-butyl ether.


no PUM

Description & Claims & Application Information

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