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Special cleaning solution for high-performance photovoltaic silicon chips

A technology for photovoltaic silicon wafers and cleaning solutions, applied in detergent compositions, detergent compounding agents, climate sustainability, etc., can solve problems such as long penetration time, energy consumption, poor cleaning performance and penetration performance, and achieve reliable The effect of health and safety quality

Inactive Publication Date: 2014-01-22
SHANGHAI YUSHIRO CHEM IND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to many reasons behind the technology and technology, the current commercially available cleaning agents for silicon wafers are generally unsatisfactory
First, the cleaning efficiency is low (8S), and the cleaning performance and penetration performance are poor; the second is that the pH value is high (>11), resulting in more prominent corrosion damage to silicon wafers; the third is that the formula contains sodium hypochlorite , organic solvents and other irritating odors or toxic substances, poor safety and hygiene quality; fourth, the cleaning process is single, and needs to be heated to above 40°C before use (consumption of energy)

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] The following weight components are mixed and stirred under certain conditions to obtain the product:

[0023] Triethanolamine 3%

[0024] Oleic acid 2%

[0025] Fatty alcohol polyoxyethylene ether (9) 12%

[0026] Sodium sulfonate 5%

[0027] Polyoxyethylene polyoxypropylene ether (12) 7%

[0028] Succinic acid derivatives 0.5%

[0029] Disodium EDTA 10%

[0030] Butanediol 7%

[0031] Deionized water balance.

Embodiment 2

[0033] A special cleaning solution for high-performance photovoltaic silicon wafers, consisting of the following components by weight:

[0034] Polymer carboxylic acid 2~4% (Example 2%, 3%, 4%)

[0035] Organic amine 3~5% (for example 2%, 3%, 5%)

[0036] Surfactant 15-40% (eg 15%, 25%, 40%)

[0037] Complexing agent 5-15% (eg 5%, 10%, 15%)

[0038] Corrosion inhibitor 0.2~1% (eg 0.2%, 0.8%, 1%)

[0039] Other additives 3-12% (eg 3%, 8%, 12%)

[0040] water balance.

[0041] The high molecular carboxylic acid is octanoic acid, n-nonanoic acid, sebacic acid, adipic acid, azelaic acid, lauric acid or oleic acid.

[0042] The organic amine is monoethanolamine, diethanolamine, triethanolamine, monoisopropanolamine, diisopropanolamine, triisopropanolamine, morpholine, dicyclohexylamine, N-methylmorpholine, 2-amino - 2-methyl-1-propanol or diethylaminoethanol.

[0043] The surfactant is fatty alcohol polyoxyethylene ether sodium sulfate (5-12), fatty alcohol polyoxyethylene e...

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PUM

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Abstract

The invention discloses a special cleaning solution for high-performance photovoltaic silicon chips, which is composed of high-polymer carboxylic acid, organic amine, a surfactant, a complexing agent, a corrosion inhibitor, other assistants and water. The cleaning solution has the advantages of excellent cleaning performance, high use safety and environmental protection.

Description

technical field [0001] The invention relates to a photovoltaic silicon chip cleaning solution. Background technique [0002] In solar photovoltaic enterprises, in order to ensure the electrical performance, reliability and yield of cells, the silicon wafers after the previous wire cutting process must first be roughly cleaned, and the organic substances adsorbed on the surface of the silicon wafers in physical form (grease, grease, Rosin, epoxy resin, polyethylene glycol, etc.), dust particles, and metal ion impurities that exist in the oxide film of the silicon wafer itself in chemical form are removed without damaging the silicon wafer or causing re-precipitation and Contamination again. The cleaning method is first to remove the organic contamination and dust particles on the surface of the silicon wafer, and then to dissolve the oxide film and remove the metal ion impurities. The requirements for cleaning fluid are firstly that the cleaning performance (cleaning effici...

Claims

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Application Information

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IPC IPC(8): C11D1/83C11D3/30C11D3/37C11D3/60H01L31/18
CPCY02P70/50
Inventor 林丽静常建忠阿部聪俞威王伟珍
Owner SHANGHAI YUSHIRO CHEM IND
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