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Copper alloy semiconductor lead frame

A lead frame and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as uneconomical cost and production efficiency defects, shorten heat treatment time, improve production efficiency, The effect of excellent mechanical properties and electrical conductivity

Inactive Publication Date: 2014-03-26
安徽先捷电子股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such a preparation process not only has defects in production efficiency, but also is uneconomical in cost.

Method used

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  • Copper alloy semiconductor lead frame
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-6, and comparative example 1

[0026] Examples 1-6, and comparative examples 1*-8*:

[0027] One, batching: mix and get raw material with the weight percentage shown in Table 1, and described raw material is the powder that purity is 99.99% oxygen-free copper and purity is each alloying element of 99.9%;

[0028] 2. Melting: melt the prepared raw materials in a high-frequency furnace under a nitrogen protective atmosphere. The smelting is to first mix Cu, Zn, and Sn into the furnace, raise the temperature to 1240°C and continue to stir the melt Mix well, then add Ni, Fe and P, continue to heat up to 1300°C and keep it warm for smelting, after smelting, cast to obtain a copper alloy ingot with a diameter of Ф30mm and a length of 200mm;

[0029] 3. Hot-rolling processing: heat the copper alloy ingot to 960°C, and then carry out 6 passes of hot-rolling to 8mm, and the final rolling temperature is controlled at 740°C;

[0030] 4. Cold-rolled processing: After the hot-rolled copper alloy is milled to remove sca...

Embodiment 7-10

[0035] Examples 7-10, and comparative examples 9*-12*, the composition of the alloy is the same as that of Example 2, the first annealing temperature and time (A), the last two annealing temperatures and time (B), the final annealing Refer to Table 2 for the preparation process parameters such as temperature and time (C), cold rolling reduction rate and so on.

[0036] Table 2

[0037]

[0038] It can be seen from the results in Table 2 that the temperature of the first annealing, intermediate annealing and final annealing should not be too high, otherwise the strength of the copper alloy will not meet the requirements, but it should not be too low, too low to achieve the effect of annealing, resulting in processing Performance and electrical conductivity can not meet the requirements, and considering the impact of intermediate cold rolling, the temperature of the first annealing should be set higher than the temperature of the intermediate annealing, the temperature of the...

Embodiment 11

[0039] Embodiment 11 is to adopt the copper alloy that embodiment 9 obtains to prepare semiconductor lead frame, specifically:

[0040] 1. Stamping forming: the copper alloy is formed into a semiconductor lead frame semi-finished product by stamping;

[0041] 2. Electroplating: electroplating the semi-finished semiconductor lead frame after cleaning and pretreatment to form a surface coating, the coating is a nickel plating layer;

[0042] 3. Final forming: Slicing the electroplated semiconductor lead frame semi-finished products for final forming.

[0043] In summary, the present invention optimizes the components of the nickel-iron-phosphorus-copper precipitation-strengthened alloy system, and reasonably controls the annealing temperature, annealing time, and cold-rolling process parameters to determine the most matching alloy composition and processing technology, thereby shortening the heat treatment time and improving In order to improve the production efficiency, a prec...

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Abstract

The invention provides a copper alloy semiconductor lead frame. The most matched alloy components and processing technologies are determined through optimization of components of a precipitation strengthened Ni-Fe-P-Cu alloy system and reasonable control on the annealing temperature, the annealing time as well as cold-rolling technological parameters; and the heat treatment time is shortened, the production efficiency is improved, meanwhile, a precipitation hardened copper alloy with an excellent mechanical property and conductivity is obtained, and then the copper alloy is finally molded into the semiconductor lead frame through a molding technology.

Description

technical field [0001] The invention relates to the technical field of semiconductor packaging, in particular to provide a copper alloy with excellent mechanical properties and electrical conductivity and a semiconductor lead frame made of the copper alloy. Background technique [0002] Copper alloy materials have excellent mechanical strength and good electrical conductivity, coupled with relatively low production costs, so they are widely used in the manufacturing of electronic and electrical devices such as semiconductor lead frames. [0003] However, with the development trend of industrial products such as integrated circuits towards high density, miniaturization, and multi-function, higher and higher requirements are put forward for the strength and electrical conductivity of the copper alloy as the basic material of the lead frame. For the higher requirements of copper alloys with excellent mechanical strength and electrical conductivity, precipitation hardening is a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C9/02C22C1/02C22F1/08H01L23/495H01L21/48
Inventor 毛秧群
Owner 安徽先捷电子股份有限公司