Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of boron-doped diamond film/carbon film composite electrode material

A boron-doped diamond and composite electrode technology, which is applied in the field of preparation of conductive diamond electrodes, can solve the problems of high signal-to-noise ratio and poor charge storage capacity

Active Publication Date: 2014-04-02
SICHUAN UNIV
View PDF9 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The characteristics of diamond electrodes include high signal-to-noise ratio, excellent response repeatability and resistance to deactivation and electrode contamination caused by molecular adsorption. It is an excellent recording electrode material, but its charge storage capacity is relatively poor, and it is used as a stimulating electrode. Still need to modify

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of boron-doped diamond film/carbon film composite electrode material
  • Preparation method of boron-doped diamond film/carbon film composite electrode material
  • Preparation method of boron-doped diamond film/carbon film composite electrode material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Deposit a diamond film of more than 5 μm on a 2-inch intrinsic silicon wafer. After the silicon wafer surface is cleaned by conventional methods, it is ground with diamond powder, and then the silicon wafer is cut into 15 × 5mm strips, and ultrasonically cleaned with ethanol or acetone for 5 Minutes, blow dry, place in an antenna bell jar type microwave plasma CVD reaction chamber, with the silicon side facing up, the diamond film surface is close to the abutment, the reaction chamber is evacuated, and the microwave generator is turned on. Hydrogen bubbling carries boron trioxide (B 2 o 3 ), the CH 4 / H 2 0.5vol%, B / C ratio of 1 / 100, working gas pressure of 4.3KPa, microwave output power of 1300W for 12 hours, boron-doped diamond film thickness of 5mm, four-probe test square resistance of 463Ω / □.

Embodiment 2

[0028]Deposit a diamond film of more than 5 μm on a 2-inch intrinsic silicon wafer. After the silicon wafer surface is cleaned by conventional methods, it is ground with diamond powder, and then the silicon wafer is cut into 15 × 5mm strips, and ultrasonically cleaned with ethanol or acetone for 5 Minutes, blow dry, place in an antenna bell jar type microwave plasma CVD reaction chamber, with the silicon side facing up, the diamond film surface is close to the abutment, the reaction chamber is evacuated, and the microwave generator is turned on. Hydrogen bubbling carries boron trioxide (B 2 o 3 ), the CH 4 / H 2 0.5vol%, B / C ratio of 1 / 100, working gas pressure of 4.3KPa, microwave output power of 1300W, the deposition time is extended to 20 hours, the boron-doped diamond film thickness is 9mm, and the square resistance of the four-probe test is 261Ω / □, enhanced conductivity.

Embodiment 3

[0030] Deposit a diamond film of more than 5 μm on a 2-inch intrinsic silicon wafer. After the silicon wafer surface is cleaned by conventional methods, it is ground with diamond powder, and then the silicon wafer is cut into 15 × 5mm strips, and ultrasonically cleaned with ethanol or acetone for 5 Minutes, blow dry, place in an antenna bell jar type microwave plasma CVD reaction chamber, with the silicon side facing up, the diamond film surface is close to the abutment, the reaction chamber is evacuated, and the microwave generator is turned on. Hydrogen bubbling carries boron trioxide (B 2 o 3 ), the CH 4 / H 2 0.5vol%, working gas pressure 4.3KPa, microwave output power 1300W for 12 hours, B / C ratio is 1 / 200, boron-doped diamond film thickness is 5mm, square resistance of four-probe test is 1464Ω / □, Conductivity drops.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Square resistanceaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a boron-doped diamond film / carbon film composite electrode material, which is characterized by adopting a conventional diamond film preparation method and comprising the following steps: preparing an insulated diamond film (3) on a non-conductive substrate (2); and preparing a boron-doped diamond film (1) on the other side of the substrate, and partially converting the insulated diamond film into a carbon film (4). Primarily in the preparation of the carbon film, the diamond of the insulated diamond film is partially converted into a non-diamond phase such as graphite and amorphous state carbon under the effect of high temperature and oxygen in a boron source; and the preparation of the carbon film and the preparation of the boron-doped diamond film are performed at the same time. When the composite plane electrode material is in use, electrical stimulation is realized by use of the advantages of low impedance and higher charge storage capacity of the carbon film; and meanwhile, the high signal-to-noise ratio of the boron-doped diamond film is more favorable for detecting electrical signals. Compared with a common electrode preparation method, two electrode materials are prepared on the substrate, and two functions can be realized.

Description

technical field [0001] The invention relates to the preparation of a conductive diamond electrode, specifically a method for preparing a conductive boron-doped diamond film on one side of a non-conductive material surface, and simultaneously preparing a conductive carbon film on the other side to obtain a composite electrode material. technical background [0002] The nervous system is a complex system. Human beings have been trying to explore its mysteries for a long time, so neural engineering is derived, which is an interdisciplinary subject of neuroscience, material science, microelectronics technology and information science. The study of neural engineering systems is of great significance for revealing the working mechanism of the nervous system and exploring the treatment and rehabilitation of neurological diseases. The most critical thing in the neural engineering system is the nerve-electronic interface, that is, the electrode, which mainly realizes the following tw...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C16/22C23C16/511A61N1/05
Inventor 芶立练发东
Owner SICHUAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com