Preparation method for Cu-Al co-doped p-type ZnO film

A co-doping, cu-al technology, applied in the fields of luminescent materials and semiconductor materials, can solve the problem of difficult to obtain p-type conductivity, and achieve the effects of no cracks, simple process steps, and low sintering temperature

Inactive Publication Date: 2014-08-27
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, some studies have shown that it is difficult to obtain stable p-type conductivity by single doping of ZnO. In order to improve its stability, its co-doping has been studied. The main co-doped p-type ZnO thin film, Zhou Liping et al. also realized the p-type transition by Al-F co-doping

Method used

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  • Preparation method for Cu-Al co-doped p-type ZnO film
  • Preparation method for Cu-Al co-doped p-type ZnO film
  • Preparation method for Cu-Al co-doped p-type ZnO film

Examples

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Embodiment 1

[0031] The preparation method of the Cu-Al co-doped p-type ZnO thin film described in this embodiment specifically includes the following steps:

[0032] (1) The precursor (Zn(CH 3 COO) 2 .2H 2 O) and dopant [Cu(CH 3 COO) 2 .H 2 O] and [Al(NO 3 ) 3 .9H 2 O] be dissolved in the dehydrated alcohol of 100ml, the molar concentration of Zn ion in the solution is 0.5mol / L, Cu doping amount is 1%, Al doping amount is 0.5%, press diethanolamine and the molar concentration of zinc ion again The ratio is 1:1, and diethanolamine is added as a stabilizer to obtain a mixed solution;

[0033] (2) Put the mixed solution prepared in step (1) in a constant temperature water bath with a water bath temperature of 55°C and stir for 3 hours while heating;

[0034] (3) Place the solution prepared in step (2) at room temperature for 1 day to prepare a uniform and transparent ZnO sol;

[0035] (4) Put the substrate into acetone, ethanol, deionized water, and ethanol successively for ultraso...

Embodiment 2

[0042] The preparation method of the Cu-Al co-doped p-type ZnO thin film described in this embodiment specifically includes the following steps:

[0043] (1) The precursor (Zn(NO 3 ) 2 .2H 2O) and dopant copper nitrate and aluminum chloride are dissolved in 100ml of ethylene glycol methyl ether, the molar concentration of Zn ions in the solution is 2mol / L (maximum value), Cu doping amount is 10%, Al doping The impurity amount is 0.5%, and the molar ratio of diethanolamine and zinc ions is 1:1, and diethanolamine is added as a stabilizer to obtain a mixed solution;

[0044] (2) Put the mixed solution prepared in step (1) in a constant temperature water bath with a water bath temperature of 85°C and stir for 2 hours while heating;

[0045] (3) Place the solution prepared in step (2) at room temperature for 2 days to prepare a uniform and transparent ZnO sol;

[0046] (4) Put the substrate into acetone, ethanol, deionized water, and ethanol successively for ultrasonic cleanin...

Embodiment 3

[0053] The preparation method of the Cu-Al co-doped p-type ZnO thin film described in this embodiment specifically includes the following steps:

[0054] (1) The precursor (Zn(CH 3 COO) 2 .2H 2 O) and dopant copper nitrate and aluminum nitrate are dissolved in 100ml of ethylene glycol methyl ether, the molar concentration of Zn ions in the solution is 2mol / L (maximum value), Cu doping amount is 2%, Al doping The amount is 1.5%, and the molar ratio of monoethanolamine and zinc ions is 1:1, and monoethanolamine is added as a stabilizer to obtain a mixed solution;

[0055] (2) Place the mixed solution prepared in step (1) in a constant temperature water bath with a water bath temperature of 70°C and stir for 2.5 hours while heating;

[0056] (3) Place the solution prepared in step (2) at room temperature for 1.5 days to prepare a uniform and transparent ZnO sol;

[0057] (4) Put the substrate into acetone, ethanol, deionized water, and ethanol successively for ultrasonic clea...

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Abstract

The invention discloses a preparation method for a Cu-Al co-doped p-type ZnO film and belongs to the technical field of semiconductor materials and luminescent materials. The method comprises: dropwise adding a prepared Cu-Al co-doped ZnO colloidal solution on a substrate, coating a film in a spin coating manner, drying, and performing annealing processing, so as to obtain the needed film. The Cu-Al co-doped p-type ZnO film exhibits good optical characteristics. The method has the advantages of low synthetic temperature, good film-forming uniformity, large film-forming area, strong adhesive force with the substrate, atom-grade doping easiness, accurately controllable doping level, simple technology and the like.

Description

technical field [0001] The invention relates to a method for preparing a Cu-Al co-doped p-type ZnO thin film, belonging to the technical fields of semiconductor materials and luminescent materials. Background technique [0002] Sol-gel technology (sol-gel) is a new type of high-efficiency edge film-making technology in the wet chemical method of preparing materials. Its initial research was carried out by J.J.Ebelmen using SiCl 4 After mixing with ethanol, it hydrolyzes in humid air to form a gel; but the sol-gel technology was actually applied to the wet chemical preparation of materials after the 1920s. In 1936, W.Geffcken et al. used metal alkoxides Hydrolysis and gelation prepared the oxide film. In 1971, H. Dishch of Germany used metal alkoxide to hydrolyze to obtain sol, which was gelatinized and then treated under the pressure of 923-973K and 100N to prepare multi-component glass; in 1975, B.E.Yoldas and M.Yamane et al. The sol-gel technology has been successfully a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C20/08
Inventor 谭红琳杨应湘向超倪成林陶世刚
Owner KUNMING UNIV OF SCI & TECH
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