Novel ingot casting crucible and manufacturing method thereof

A technology of casting ingots and crucibles, which is applied in the field of solar cell crystal silicon wafer preparation, to achieve the effects of inhibiting the formation of polycrystalline corners, improving purity, and reducing the production ratio

Inactive Publication Date: 2014-09-17
XUZHOU COLLEGE OF INDAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the ingot crucible is still a one-time consumable in the production process

Method used

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  • Novel ingot casting crucible and manufacturing method thereof
  • Novel ingot casting crucible and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] A method for preparing silicon dioxide slurry, the specific components of which are ultrapure water, silica sol, adhesive, and high-purity silicon dioxide. The preparation of the slurry is as follows: ultrapure water, silica sol, binder, high-purity silica (purity is 99.999%, particle size is 80-120 mesh) and the above raw materials are in a weight ratio of 5:1:0.5:3.5 After counterweighting, first put ultrapure water, silica sol, and adhesive into the mixer and stir evenly for 30 minutes to form a stable suspension, then add high-purity silica particles and stir evenly for 30 minutes before standing for later use .

[0025] When spraying the slurry, the process parameters are as follows: the spray gun pressure is 0.4-0.8MPa, the spraying temperature is 80°C, the drying temperature after spraying is 120°C hot air drying, and the time is 30min.

[0026] The proportion of silica sol and adhesive can fluctuate depending on the process level.

Embodiment 2

[0028] Select an ordinary G5 ingot crucible (1), and spray silicon nitride on the inner wall (2) (including the bottom surface and side wall) of the crucible according to the normal process. The thickness of the silicon nitride coating (3) is 200 μm. After drying and forming a film, Spray coating of high-purity silica coating (4) on the silicon nitride coating (including the bottom surface and side walls of the crucible), the particle size of the silica in the high-purity silica slurry is 180 mesh, and the silica The thickness of the sprayed layer is 180 μm, and a new high-efficiency crucible can be obtained after drying.

Embodiment 3

[0030] Select an ordinary G5 ingot crucible (1), and spray silicon nitride on the inner wall (2) (including the bottom surface and side wall) of the crucible according to the normal process. The thickness of the silicon nitride coating (3) is 200 μm. After drying and forming a film, A high-purity silicon dioxide coating (4) is sprayed on the silicon nitride coating on the bottom surface of the crucible.

[0031] On the bottom surface of the crucible that has sprayed and dried the silicon nitride coating, put a spray template (5) that is processed with a geometric figure (6), and the bottom of the template has a conical protrusion (7) for supporting the template, and then silicon dioxide For slurry spraying, the particle size of high-purity silica is 160 mesh, and the thickness of the silica spray layer is 180 μm. After drying, a new type of high-efficiency crucible with geometric figures and concave-convex structures on the bottom surface can be obtained.

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Abstract

The invention discloses a novel ingot casting crucible which is a high-efficiency ingot casting crucible, wherein the ingot casting crucible is obtained through secondary coating of inductive nucleation substances such as silicon dioxide slurry and the like based on a condition that a general silicon nitride coating is sprayed on the surface of the inner wall of an existing ingot casting crucible, and has the advantage of improving the yield of ingot casting; The inductive nucleation substances at the bottom of the crucible can be sprayed in a geometric figure including tetragon, hexagon and the like and the figure can also be provided with a concave-convex structure so as to facilitate the aggregation and subsequent processing and removal of impurities at the bottom of a silicon ingot. The high-efficiency ingot casting crucible is used for inducing the nucleation of crystal silicon by using silicon dioxide powder and the like during a crystal growth process, so that the defects including dislocation, crystal boundary and the like of the crystal in the preliminary stage of crystal growth can be reduced, the quality of the crystal growth and the overall quality of silicon crystal can be improved, thus the yield of the silicon ingot can be further increased and the overall economic efficiency can be improved.

Description

technical field [0001] The invention relates to a novel ingot crucible and a preparation method thereof for increasing the yield of crystalline silicon ingots, in particular to a novel ingot crucible and a preparation method thereof. The invention belongs to the technical field of solar cell crystalline silicon wafer preparation. Background technique [0002] Crystalline silicon solar cells currently dominate the photovoltaic industry. The cost of silicon wafers accounts for more than half of the cost of single / polycrystalline silicon, so reducing the cost of silicon wafers and improving the quality of silicon wafers are of great significance to the development of the photovoltaic industry. Reduce costs and increase the yield of ingots as a technical improvement direction for technical research. [0003] In conventional crystalline silicon, the random orientation of the grains makes it difficult to texture the resulting wafer surface. Texturing is used to increase cell ef...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00C30B28/06C30B29/06
Inventor 权祥王元庆颜续周琳吕阳邓敏焦富强
Owner XUZHOU COLLEGE OF INDAL TECH
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