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Silicon-containing polyimide coating adhesive with high adhesion and preparation method of silicon-containing polyimide coating adhesive

A polyimide coating, high-adhesion technology, applied in the field of microelectronic information, can solve the problems of high cost, lack of extensiveness, large amount of double-ended aminotetramethylsiloxane added, etc., and achieve excellent adhesion , the effect of product cost reduction

Active Publication Date: 2014-12-10
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Its research focuses on the synthesis mechanism, and the adhesion is only studied on stainless steel and glass substrates, which lacks universality, and the addition of double-ended aminotetramethylsiloxane is relatively large, and the cost is high
[0007] In addition, there are also documents [Hu Yingmo, Shen Lexin, Zhu Jianhua, etc. Synthesis of bis(p-aminophenoxy)dimethylsilane and its preparation of polyimide. Chemical New Materials, 2011, 39(8): 39- 41.] Using bis(p-aminophenoxy)dimethylsilane, 4,4'-diaminodiphenyl ether and pyromellitic dianhydride to synthesize silicon-containing polyimide, the same lack of adhesion research, And other properties need to be further improved

Method used

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  • Silicon-containing polyimide coating adhesive with high adhesion and preparation method of silicon-containing polyimide coating adhesive

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Dissolve 7.7 parts of 4,4'-diaminodiphenyl ether in 55.5 parts of N-methylpyrrolidone at 10-30°C, and add 0.3 parts of 1,3-bis(3-aminopropyl)-1 , 1,3,3-Tetramethyldisiloxane. Then add 0.6 parts of 1,3-bis(3,4-dicarboxyphenyl)-1,1,3,3-tetramethyldisiloxane dianhydride and 0.4 parts of A mixture of pyromellitic dianhydride, 2 parts of 3,3',4,4'-benzophenone tetracarboxylic dianhydride and 9.7 parts of 3,3',4,4'-diphenylmethyl ether tetracarboxylic dianhydride For copolymerization, continue to add 23.8 parts of solvent, and carry out the reaction for 3 hours under vigorous stirring, and the obtained yellow homogeneous viscous liquid is silicon-containing polyimide coating glue. Apply coating glue to aluminum, copper, nickel, single crystal silicon wafer, glass or Al 2 o 3 , AlN, BeO, SiC and Si 3N 4 The surface of the ceramic material is placed in a vacuum oven at 80°C, 0MPa, 120°C, -0.02MPa, 150°C, and -0.04MPa for 1 hour, and then placed in a muffle furnace at 210°C...

Embodiment 2

[0029] Dissolve 8.4 parts of 4,4'-diaminodiphenyl ether in 54 parts of N-methylpyrrolidone at 10-30°C, and add 0.3 parts of 1,3-bis(3-aminopropyl)-1 , 1,3,3-tetramethyldisiloxane and 0.3 parts of 1,3-bis(3-aminobutyl)-1,1,3,3-tetramethyldisiloxane. Then add 0.5 parts of 1,3-bis(3,4-dicarboxyphenyl)-1,1,3,3-tetramethyldisiloxane dianhydride and 2.2 parts of 3 , 3',4,4'-Benzophenone tetra-acid dianhydride and 11.2 parts of 3,3',4,4'-Diphenylmethyl ether tetra-acid dianhydride are copolymerized, then add 23.1 parts of solvent, violent The reaction was carried out for 6 hours under stirring, and the obtained yellow homogeneous viscous liquid was silicon-containing polyimide coating glue. Apply coating glue to aluminum, copper, nickel, single crystal silicon wafer, glass or Al 2 o 3 , AlN, BeO, SiC and Si 3 N 4 Etc ceramic material surface, the heat treatment step is the same as that of Example 1, to obtain silicon-containing polyimide composite boards with different substrate...

Embodiment 3

[0031] Dissolve 8 parts of 4,4'-diaminodiphenyl ether in 52.3 parts of N,N-dimethylacetamide at 10-30°C, add 0.3 parts of 1,3-bis(3-aminopropyl base)-1,1,3,3-tetramethyldisiloxane and 0.3 parts of 1,3-bis(3-aminopropyl)-1,1,3,3-tetramethylpolysiloxane ( n=4). Then, 0.3 parts of 1,3-bis(3,4-dicarboxyphenyl)-1,1,3,3-tetramethyldisiloxane dianhydride and 16.4 parts of Polymerize 3,3',4,4'-triphenylene ether tetraacid dianhydride, then add 22.4 parts of solvent, and react under vigorous stirring for 8 hours, the obtained yellow homogeneous viscous liquid is silicon-containing polyimide Coating glue. Apply coating glue to aluminum, copper, nickel, single crystal silicon wafer, glass or Al 2 o 3 , AlN, BeO, SiC and Si 3 N 4 Etc ceramic material surface, the heat treatment step is the same as that of Example 1, to obtain silicon-containing polyimide composite boards with different substrates. After the adhesion test, the adhesion between the coating and different substrates ha...

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Abstract

The invention discloses a silicon-containing polyimide coating adhesive with high adhesion and a preparation method of the silicon-containing polyimide coating adhesive. The coating adhesive can be coated on aluminum, copper, nickel, monocrystalline silicon pieces and glass or surfaces of ceramic materials such as Al2O3, AlN, BeO, SiC and Si3N4 by using a spraying method, a jilting coating method or a dip-coating method, and is excellent in adhesion. In addition, by virtue of appropriate thermal treatment, the coating adhesive can be further prepared into a polyimide membrane material which is excellent in mechanical property, thermal property and insulating property, is relatively low in water absorption and can be widely applied to industries such as micro-electronic integrated circuits, diodes and high-voltage silicon rectifier stacks.

Description

technical field [0001] The invention relates to the field of microelectronic information, in particular to a silicon-containing polyimide coating adhesive with high adhesion and a preparation method thereof. The coating glue is used as a material for chip protection film, buffer coating film, passivation film, alpha ray shielding film and interlayer insulation layer of multilayer metal interconnection circuit. technical background [0002] Polyimide coating glue is the precursor of thermoplastic polyimide. The main chain contains imide ring and very stable aromatic heterocyclic structure. After proper heat treatment, it can be made into polyimide film material, which has very Excellent mechanical properties, thermal properties, dielectric properties, and excellent bonding properties to glass, single crystal, metal surfaces, etc., can be used as chip protection film, buffer coating film, passivation film, α-ray shielding film and more The interlayer insulation layer of the l...

Claims

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Application Information

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IPC IPC(8): C09D179/08C09D5/25C09J179/08C08G73/10
Inventor 徐勇薛绘杨艳李林霜李宣曾皓张晶晶
Owner NANJING UNIV OF SCI & TECH
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