Method for preparing p-type tin oxide film material by using sol-gel method
A technology of sol-gel method and thin-film material, which is applied in the direction of metal material coating process, liquid chemical plating, coating, etc., can solve the problem that limits the development of large-scale integrated circuits of transparent oxides, and the electrical properties of p-type oxides cannot be solved. The electrical characteristics of the type oxide can be matched to achieve the effect of short cycle, low cost and thin film thickness.
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Embodiment 1
[0019] The p-type SnO provided in this example x The preparation method of the film material is as follows: (1), 0.065mol of ethylene glycol methyl ether, 0.002mol of stannous chloride dihydrate and 0.01mol of ethanolamine are mixed in a vessel and stirred until clear, and then the solution is moved to a vacuum tube furnace In the process, the internal environment of the tube furnace is evacuated to the required vacuum state with a mechanical pump, and then filled with argon. The solution was heated at 90° C. for 1.5 hours, and after the heating was completed, the solution was aged in an argon atmosphere for 1.5 days to obtain a sol. Due to the active chemical properties of divalent tin, it can be oxidized quickly in the air, so the process of configuring the sol must be rapid to prevent the divalent tin from being oxidized. If the concentration of tin is too high, ions will agglomerate during annealing, so the concentration should be as small as possible. The amount of stab...
Embodiment 2
[0029] The p-type SnO provided in this example x The preparation method of the film material is as follows: (1), 0.07mol of ethylene glycol methyl ether, 0.0015mol of stannous chloride dihydrate and 0.008mol of ethanolamine are mixed in a vessel and stirred until clear, and then the solution is moved to a vacuum tube furnace In the process, the internal environment of the tube furnace is evacuated to the required vacuum state with a mechanical pump, and then filled with argon. The solution was heated at 80° C. for 2 hours, and after the heating was completed, the solution was aged in an argon atmosphere for 3 days to obtain a sol.
[0030] (2) The substrate is ultrasonically cleaned with acetone, absolute ethanol and deionized water respectively. The substrate is insulating SiO 2 / Si substrate, the size of the substrate is 10mm×10mm, SiO on the substrate 2 The thickness of the layer is 500 nm.
[0031] (3), the substrate is fixed on the glue homogenizer, rotated at a speed...
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