Production method of single-crystal silicon carbide nanowire high-sensitivity purple-light photoelectric detector

A single crystal silicon carbide, photodetector technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of slow response and recovery time of photodetectors, achieve short recovery time, increase sensitivity, and reduce contact resistance. Effect

Inactive Publication Date: 2015-09-30
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The purpose of the present invention is to solve the problem of slow response and recovery time of photodetectors based on traditional bulk or thin-film silicon carbide materials, and at the same time have high sensitivity to detect violet and ultraviolet light and can respond to the above-mentioned light at high temperatures

Method used

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  • Production method of single-crystal silicon carbide nanowire high-sensitivity purple-light photoelectric detector
  • Production method of single-crystal silicon carbide nanowire high-sensitivity purple-light photoelectric detector
  • Production method of single-crystal silicon carbide nanowire high-sensitivity purple-light photoelectric detector

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Effect test

Embodiment 1

[0043] The preparation method of the single crystal silicon carbide nanowire high-sensitivity violet light photodetector in this embodiment, the steps include:

[0044] (1) SiC single crystal substrate cleaning: cut the purchased 3C-SiC single wafer into about 1cm 2 After the square chip is cleaned by the semiconductor standard cleaning process, a certain thickness (5nm) of metal Ni film is evaporated on its surface.

[0045] (2) Preparation of SiC single crystal nanowires: Take 2g of silicon carbon xerogel and grind it in a ball mill for 30min, then put it into a 20mL crucible, place the SiC single wafer directly above the raw material, and seal it with carbon paper . Place the sealed crucible in the center of the vacuum box furnace. Introduce Ar gas and adjust the air flow rate to 200 sccm, set the temperature of the tube furnace to 1400°C, heat up for 1 hour, hold for 1 hour, and then cool down to room temperature naturally with the furnace. figure 1 and 2 Typical scann...

Embodiment 2

[0053] The preparation method of the single crystal silicon carbide nanowire high-sensitivity violet light photodetector in this embodiment, the steps include:

[0054] (1) SiC single crystal substrate cleaning: cut the purchased 3C-SiC single wafer into about 1cm 2 After the square chip is cleaned by the semiconductor standard cleaning process, a certain thickness (30nm) of metal Ni film is evaporated on its surface.

[0055](2) Preparation of SiC single crystal nanowires: Take 2g of silicon carbon xerogel and grind it in a ball mill for 30min, then put it into a 20mL crucible, place the SiC single wafer directly above the raw material, and seal it with carbon paper . Place the sealed crucible in the center of the vacuum box furnace. Introduce Ar gas and adjust the airflow rate to 200 sccm, set the temperature of the tube furnace to 1200°C, the heating time is 1.5 hours, the holding time is 2 hours, and then naturally cool to room temperature with the furnace. figure 1 and...

Embodiment 3

[0059] The preparation method of the single crystal silicon carbide nanowire high-sensitivity violet light photodetector in this embodiment, the steps include:

[0060] (1) SiC single crystal substrate cleaning: cut the purchased 3C-SiC single wafer into about 1cm 2 After the square chip is cleaned by the semiconductor standard cleaning process, a certain thickness (20nm) metal Ni film is evaporated on its surface.

[0061] (2) Preparation of SiC single crystal nanowires: Take 2g of silicon carbon xerogel and grind it in a ball mill for 30min, then put it into a 20mL crucible, place the SiC single wafer directly above the raw material, and seal it with carbon paper . Place the sealed crucible in the center of the vacuum box furnace. Introduce Ar gas and adjust the airflow rate to 200 sccm, set the temperature of the tube furnace to 1000°C, the heating time is 0.5 hours, the holding time is 1 hour, and then naturally cool to room temperature with the furnace. figure 1 and 2...

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Abstract

The invention discloses a production method of a single-crystal silicon carbide nanowire high-sensitivity purple-light photoelectric detector. The method includes the steps of firstly, producing a matrix; secondly, producing nano materials; thirdly, building the photoelectric detector, to be more specific, ultrasonically dispersing SiC nanowires obtained in the second step in anhydrous ethanol solution to form nanowire dispersing liquid, and moving the nanowire dispersing liquid to a cleaned Si / SiO2 substrate; processing the surface of the substrate with dispersed nanowires to obtain interdigital electrode patterns, evaporating a metal thin film on the surface of the electrode patterns, stripping to obtain an interdigital Cr / Au electrode array, and connecting two electrodes with the single nanowire to form the photoelectric detector. The detector produced by the method can respond to purple light under a high-temperature environment, and high response efficiency is achieved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic devices, and in particular relates to a method for preparing a single crystal silicon carbide nanowire high-sensitivity violet light photodetector based on a single crystal silicon carbide nanowire capable of high-temperature work. Background technique [0002] Ultraviolet light photodetectors are semiconductor devices that convert optical signals with a wavelength range of 380-435nm into electrical signals. They are mainly used in biochemical detection, flammable gas tail flame detection, and missile plume smoke ultraviolet radiation detection. SiC has a wide band gap (2.4-3.3eV), can detect light sources below 500nm, has a good response to near-ultraviolet and ultraviolet light, and has inherent high saturation electron mobility, high anti-breakdown field strength, and low thermal expansion. coefficient and many other advantages, it is fully capable of sensitive detection of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/1812Y02P70/50
Inventor 尉国栋郑金桔种海宁高凤梅杨为佑
Owner NINGBO UNIVERSITY OF TECHNOLOGY
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