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Monocrystalline silicon piece spraying and texturing additive with high boiling point

A technology of monocrystalline silicon wafers and additives, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of long reaction time, inability to integrate, and large labor consumption in slot-type texturing, and achieve great practical results. Utilization value, low cost, effect of reducing pollution

Inactive Publication Date: 2015-10-21
绍兴拓邦新能源股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the additives used in the industrial production of monocrystalline silicon cells are mainly used in the groove-type texturing, and the process has the following problems: ①The groove-type texture requires manual insertion, which will not only produce pollution, but also consume A large amount of labor; ②Flower baskets are needed in the process of trough texturing, and the existence of flower baskets will inevitably produce flower basket marks, which will result in beautiful silicon wafers; ③The reaction time of trough texturing is long, usually more than 10 minutes, and the production capacity is low
④The trough-type velvet-making trough is not like the chain-type velvet-making trough, and cannot be integrated

Method used

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  • Monocrystalline silicon piece spraying and texturing additive with high boiling point
  • Monocrystalline silicon piece spraying and texturing additive with high boiling point

Examples

Experimental program
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Effect test

Embodiment 1

[0023] To prepare alcohol-free single crystal texturing additives, dissolve 10g of sodium alginate, 18g of trisodium phosphate, 2g of sodium lauryl sulfate, 1.5g of vitamin C, and 25g of propylene carbonate into 1L of deionized water to obtain an alcohol-free single crystal. fleece additives. Add 2000g of sodium hydroxide and 1L of alcohol-free single crystal texturing additive into 100L of deionized water to obtain a texturing solution. Raise the temperature of the texturing solution to 85°C, and then horizontally immerse the monocrystalline silicon wafer for solar cells into the texturing solution for texturing. The texturing time is 180s. The size of the pyramid texture of the obtained silicon wafer is 2-3 μm as detected by the scanning electron microscope. And the size is uniform.

Embodiment 2

[0025] To prepare alcohol-free monocrystalline texturing additives, dissolve 15g sodium alginate, 27g trisodium phosphate, 3g sodium lauryl sulfate, 2.25g vitamin C, and 37.5g propylene carbonate into 1.5L deionized water to obtain alcohol-free monocrystalline Crystal Texturing Additive. Add 3000g of sodium hydroxide and 1.5L of alcohol-free single crystal texturing additive into 100L of deionized water to obtain a texturing solution. Raise the temperature of the texturing solution to 75°C, and then horizontally immerse the monocrystalline silicon wafer for solar cells into the texturing solution for texturing. The texturing time is 300s. The size of the pyramid textured surface of the obtained silicon wafer is 2-3 μm as detected by the scanning electron microscope. And the size is uniform.

Embodiment 3

[0027] To prepare alcohol-free single crystal texture additive, dissolve 20g sodium alginate, 36g trisodium phosphate, 4g sodium lauryl sulfate, 3g vitamin C, and 50g propylene carbonate into 2L deionized water to obtain alcohol-free single crystal texture additive . Add 4000g of sodium hydroxide and 2L of alcohol-free single crystal texturing additive into 100L of deionized water to obtain a texturing solution. Raise the temperature of the texturing solution to 70°C, and then horizontally immerse the monocrystalline silicon wafer for solar cells into the texturing solution for texturing. The texturing time is 300s. The size of the pyramid textured surface of the obtained silicon wafer is 2-3 μm as detected by the scanning electron microscope. And the size is uniform.

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Abstract

The invention relates to a monocrystalline silicon piece spraying and texturing additive with a high boiling point, and belongs to the technical field of the production of solar batteries. The additive comprises the following raw materials and components in percentage by weight: 0.1-4% of propylene carbonate, 0.1-1% of vitamin, 0.01-3% of trisodium phosphate, 0.01-2% of sodium alginate, 0.001-1% of sodium dodecyl sulfate and the balance of deionized water; while in use, an appropriate amount of a sodium hydroxide solution is added for compounding texturing liquid which is suitable for a spraying technology to use. According to the additive disclosed by the invention, high viscosity of the sodium alginate is used for controlling the reaction speed of the silicon piece and alkali, so that pyramid fabric surfaces with uniform sizes can be obtained in a short time; a spraying technology is matched, automatic production is realized, the yield is high, and the sodium alginate in the additive and residual metal ions on the surface of the silicon piece generate a chelation reaction, so that the additive has the effect of cleaning the silicon piece, and the cost is low.

Description

technical field [0001] The invention relates to a high-boiling-point monocrystalline silicon chip spraying texturing additive, which belongs to the technical field of solar cell production. Background technique [0002] When preparing monocrystalline silicon solar cells, in order to improve the efficiency and performance of solar cells, it is necessary to form a pyramid-structured suede on the surface of the silicon chip to increase the optical path of incident light, thereby increasing light absorption and reducing reflectivity. , thereby improving the conversion efficiency of solar cells. [0003] At present, the additives used in the industrial production of monocrystalline silicon cells are mainly used in the slot-type texturing, and the process has the following problems: ① The slot-type texturing needs manual insertion, which will not only produce pollution, but also consume A lot of labor; ②Flower baskets are needed in the process of slot texturing, and the existence...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/08C30B29/06
Inventor 李一鸣张震华桑丹义邓雨微
Owner 绍兴拓邦新能源股份有限公司