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Compensation doping stopping impurity belt terahertz detector chip and preparation method thereof

A terahertz detector and impurity blocking technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of low resistivity of the barrier layer and large dark current, so as to reduce dark current and improve resistance rate, and the effect of improving sensitivity

Active Publication Date: 2015-10-21
NO 50 RES INST OF CHINA ELECTRONICS TECH GRP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Another method is to use the epitaxial growth process to grow a heavily doped absorber layer on the Si substrate, and then grow a barrier layer on the absorber layer in the same furnace. The advantage of this method is that it is easy to control the concentration and thickness of the absorber layer, but The disadvantage is that the impurities used to grow the absorbing layer will inevitably be introduced into the barrier layer, resulting in a low resistivity of the barrier layer and a large dark current

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  • Compensation doping stopping impurity belt terahertz detector chip and preparation method thereof
  • Compensation doping stopping impurity belt terahertz detector chip and preparation method thereof
  • Compensation doping stopping impurity belt terahertz detector chip and preparation method thereof

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Embodiment 1

[0037] The structure of the compensated doping barrier impurity band terahertz detector provided by the present invention is as follows: figure 1 and figure 2 As shown, the high-conductivity Si substrate 1 used in the detector of this embodiment is doped with P, and the doping concentration is 5×10 19 cm -3 , with a thickness of 450 μm; a silicon-doped phosphorus absorber layer 2 is grown on a high-conductivity Si substrate 1 by chemical vapor deposition, and the doping ion is P, and the doping concentration is 6×10 17 cm -3 , with a thickness of 20 μm; a high-resistivity barrier layer 3 was epitaxially grown on the absorber layer 2 by doping B ions with a doping concentration of 6.5×10 14 cm -3 , with a thickness of 6 μm; then, the barrier layer 3 is implanted with P ions using an ion implantation process, the implantation energy is 30keV, and the implantation dose is 3×10 14 cm -2 The implanted ions are activated by a rapid thermal annealing process to repair the impl...

Embodiment 2

[0039] The manufacturing method of the compensating doping and blocking impurity band terahertz detector provided by the present invention comprises the following steps:

[0040] 1. Substrate material cleaning: Clean the high-conductivity Si substrate with carbon tetrachloride, acetone, MOS grade ethanol, and deionized water in sequence, and dry it with nitrogen;

[0041] 2. Epitaxial growth absorbing layer: grow absorbing Si:P absorbing layer 2 on high conductivity Si substrate 1 by chemical vapor deposition process, doped ion P, doping concentration 6×10 17 cm -3 , thickness 20μm; (see Figure 4 );

[0042] 3. Compensatory doping growth barrier layer: On the absorber layer 2, a high-resistivity barrier layer 3 is epitaxially grown by a compensatory doping process, and the doping ion B is compensated, and the doping concentration is 6.5×10 14 cm -3 , with a thickness of 6 μm (see Figure 5 );

[0043] 4. The first photolithography: cast a positive resist on the surface ...

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Abstract

The invention discloses a compensation doping stopping impurity belt terahertz detector chip and a manufacturing method. The preparation method comprises steps of epitaxially growing a silicon-doped phosphorus absorption layer and doping phosphorus ion on a high-conductivity Si substrate by use of chemical vapor deposition method in an epitaxial manner; epitaxially growing a high-electrical resistivity blocking layer on the absorption layer via compensating and doping method in an epitaxial manner; compensatingly doping boron ion; and then manufacturing positive and negative electrodes via photoetching, ion implantation, rapid thermal annealing, passivation, wet etching, and electron beam evaporation. The manufacturing method is advantageous in that by use of compensatingly doping method, when the blocking layer is grown in an epitaxial manner, compensation boron ion is introduced, so electrical resistivity of the blocking layer is increased, and thickness of the blocking layer can be easily controlled, thereby effectively reducing dark current, inhibiting noise and increasing sensitivity; the introduction of the boron ion can be well controlled via an air source switch; the preparation method is well compatible with the traditional epitaxy technical; and the preparation method is advantaged by simple and convenient operation and practicability.

Description

technical field [0001] The present invention relates to a preparation technology of a terahertz detector device, in particular to a method for preparing a compensation-doped impurity band terahertz detector, which is suitable for making a barrier impurity band terahertz detector with low dark current, high sensitivity and high response rate. Hertz detector. Background technique [0002] The working band of the Si-based barrier impurity band detector is 5-40 μm, which can realize the detection of terahertz waves. Its working mechanism is: the terahertz radiation is incident from the front of the device, is absorbed by the absorbing layer through the barrier layer, and excites the electrons on the impurity band to transition to the conduction band, forming free carriers, which are collected by the electrode under an external bias voltage, so that the terahertz Hertz radiation is converted into an electrical signal to complete the detection of terahertz radiation. Barrier imp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/117H01L31/0288H01L31/18
CPCH01L31/0288H01L31/117H01L31/1804Y02P70/50
Inventor 王兵兵王晓东潘鸣侯丽伟谢巍臧元章关冉
Owner NO 50 RES INST OF CHINA ELECTRONICS TECH GRP