High-thermal-conductivity and low-expansion conductive pattern board and preparation method therefor
A conductive pattern, low expansion technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of low thermal expansion coefficient of thermal conductivity, difficult anti-oxidation treatment of end faces, large thermal expansion coefficient, etc., and achieve high dielectric The effect of constant, good dimensional stability, and low coefficient of thermal expansion
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Embodiment 1
[0022] 1) The diamond / copper composite substrate was prepared by pressure infiltration method, the volume fraction of diamond particles was 60%, the heating temperature was 1200°C, the holding time was 10min, and the applied pressure was 10MPa, and it was processed into 30mm×40mm×3mm cuboid;
[0023] 2) Coarse grinding, fine grinding, rough polishing, and fine polishing of the diamond / copper composite material substrate;
[0024] 3) Using magnetron sputtering technology to deposit a Ti transition layer on the diamond / copper composite substrate, the voltage is 350V, the current is 100mA, the deposition pressure is 1.0Pa, the deposition rate is 2 angstroms / second, and the thickness of the transition layer is 100nm;
[0025] 4) Using magnetron sputtering technology to deposit an AlN insulating dielectric layer on the diamond / copper composite material substrate deposited with a Ti transition layer, the voltage is 350V, the current is 100mA, the deposition pressure is 1.0Pa, and th...
Embodiment 2
[0030] 1) The diamond / copper composite substrate was prepared by pressure infiltration method, the volume fraction of diamond particles was 65%, the heating temperature was 1200°C, the holding time was 10min, and the applied pressure was 10MPa, and it was processed into 40mm×50mm×3mm cuboid;
[0031] 2) Coarse grinding, fine grinding, rough polishing, and fine polishing of the diamond / copper composite material substrate;
[0032] 3) Using magnetron sputtering technology to deposit a Ti transition layer on the diamond / copper composite substrate, the voltage is 350V, the current is 100mA, the deposition pressure is 1.0Pa, the deposition rate is 2 angstroms / second, and the thickness of the transition layer is 200nm;
[0033] 4) Using magnetron sputtering technology to deposit an AlN insulating dielectric layer on the diamond / copper composite material substrate deposited with a Ti transition layer, the voltage is 350V, the current is 100mA, the deposition pressure is 1.0Pa, and th...
Embodiment 3
[0038] 1) The diamond / aluminum composite substrate was prepared by pressure infiltration method, the volume fraction of diamond particles was 60%, the heating temperature was 920°C, the holding time was 15min, and the applied pressure was 10MPa, and it was processed into 35mm×45mm×3mm cuboid;
[0039] 2) Coarse grinding, fine grinding, rough polishing, and fine polishing of the diamond / aluminum composite material substrate;
[0040] 3) Using magnetron sputtering technology to deposit a Ti transition layer on the diamond / aluminum composite substrate, the voltage is 350V, the current is 100mA, the deposition pressure is 1.0Pa, the deposition rate is 2 angstroms / second, and the thickness of the transition layer is 150nm;
[0041] 4) Using magnetron sputtering technology to deposit a BN insulating dielectric layer on the diamond / aluminum composite substrate deposited with a Ti transition layer, the voltage is 350V, the current is 100mA, the deposition pressure is 1.0Pa, and the de...
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