High-thermal-conductivity and low-expansion conductive pattern board and preparation method therefor

A conductive pattern, low expansion technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of low thermal expansion coefficient of thermal conductivity, difficult anti-oxidation treatment of end faces, large thermal expansion coefficient, etc., and achieve high dielectric The effect of constant, good dimensional stability, and low coefficient of thermal expansion

Inactive Publication Date: 2016-03-09
GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional metal substrate is based on a metal plate (aluminum, copper, iron, etc.), and an insulating dielectric layer and a conductive layer (copper foil) are covered on the substrate. It is 398W / mK, but there are disadvantages such as large thermal expansion coefficient, heavy weight, and difficulty in anti-oxidation treatment of the end surface.
The density of the aluminum substrate is small, and the thermal conductivity is 237W / mK, but there is also the problem of a large thermal expansion coefficient, and the printed circuit board produced produces noise during operation on the parts equipped with switching elements, power supplies, and power amplifier elements.
The iron substrate has electromagnetic properties that other metal substrates do not have, and has the advantages of good dimensional stability and low price, but it has the problems of heavy weight, corrosion resistance, and poor thermal conductivity.
Traditional metal substrates can no longer meet the needs of the development of high-power electronic devices, so it is necessary to develop substrates with higher performance such as high thermal conductivity, low thermal expansion coefficient, and light weight

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] 1) The diamond / copper composite substrate was prepared by pressure infiltration method, the volume fraction of diamond particles was 60%, the heating temperature was 1200°C, the holding time was 10min, and the applied pressure was 10MPa, and it was processed into 30mm×40mm×3mm cuboid;

[0023] 2) Coarse grinding, fine grinding, rough polishing, and fine polishing of the diamond / copper composite material substrate;

[0024] 3) Using magnetron sputtering technology to deposit a Ti transition layer on the diamond / copper composite substrate, the voltage is 350V, the current is 100mA, the deposition pressure is 1.0Pa, the deposition rate is 2 angstroms / second, and the thickness of the transition layer is 100nm;

[0025] 4) Using magnetron sputtering technology to deposit an AlN insulating dielectric layer on the diamond / copper composite material substrate deposited with a Ti transition layer, the voltage is 350V, the current is 100mA, the deposition pressure is 1.0Pa, and th...

Embodiment 2

[0030] 1) The diamond / copper composite substrate was prepared by pressure infiltration method, the volume fraction of diamond particles was 65%, the heating temperature was 1200°C, the holding time was 10min, and the applied pressure was 10MPa, and it was processed into 40mm×50mm×3mm cuboid;

[0031] 2) Coarse grinding, fine grinding, rough polishing, and fine polishing of the diamond / copper composite material substrate;

[0032] 3) Using magnetron sputtering technology to deposit a Ti transition layer on the diamond / copper composite substrate, the voltage is 350V, the current is 100mA, the deposition pressure is 1.0Pa, the deposition rate is 2 angstroms / second, and the thickness of the transition layer is 200nm;

[0033] 4) Using magnetron sputtering technology to deposit an AlN insulating dielectric layer on the diamond / copper composite material substrate deposited with a Ti transition layer, the voltage is 350V, the current is 100mA, the deposition pressure is 1.0Pa, and th...

Embodiment 3

[0038] 1) The diamond / aluminum composite substrate was prepared by pressure infiltration method, the volume fraction of diamond particles was 60%, the heating temperature was 920°C, the holding time was 15min, and the applied pressure was 10MPa, and it was processed into 35mm×45mm×3mm cuboid;

[0039] 2) Coarse grinding, fine grinding, rough polishing, and fine polishing of the diamond / aluminum composite material substrate;

[0040] 3) Using magnetron sputtering technology to deposit a Ti transition layer on the diamond / aluminum composite substrate, the voltage is 350V, the current is 100mA, the deposition pressure is 1.0Pa, the deposition rate is 2 angstroms / second, and the thickness of the transition layer is 150nm;

[0041] 4) Using magnetron sputtering technology to deposit a BN insulating dielectric layer on the diamond / aluminum composite substrate deposited with a Ti transition layer, the voltage is 350V, the current is 100mA, the deposition pressure is 1.0Pa, and the de...

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Abstract

The invention belongs to the technical field of electronic packaging and particularly relates to a high-thermal-conductivity and low-expansion conductive pattern board and a preparation method therefor. The preparation method comprises: by taking a high-thermal-conductivity and low-expansion composite material as a base material, preparing a high-thermal-conductivity insulation medium layer on single or both surfaces of the base material with a physical or chemical method of welding, gluing, chemical vapor deposition, magnetron sputtering or physical vapor deposition; and finally depositing a conductor circuit pattern layer on the insulation medium layer with a chemical vapor deposition technology, a magnetron sputtering technology, a physical vapor deposition technology or an etching method so as to obtain the lamellar high-thermal-conductivity and low-expansion conductive pattern board. The conductive pattern board has the properties of high breakdown strength, high dielectric constant and the like in addition to high thermal conductivity, low expansion coefficient, high strength and high size stability; and a conductor circuit pattern is directly formed on a substrate, so that a preparation process for the conductor circuit pattern layer is simplified.

Description

technical field [0001] The invention belongs to the technical field of electronic packaging, and in particular relates to a high thermal conductivity and low expansion conductive graphic board and a preparation method thereof. Background technique [0002] With the rapid development of the electronic information industry, the size of electronic products is getting smaller and smaller, and the power density is getting higher and higher. Solving the problem of heat dissipation is a huge challenge for the design of the electronics industry. With its excellent heat dissipation performance, machining performance, electromagnetic shielding performance, dimensional stability, magnetic performance and multifunctional performance, metal substrates are widely used in hybrid integrated circuits, automobiles, motorcycles, office automation, high-power electrical equipment, power supply equipment and other fields. , has been used more and more, especially as a substrate in LED packaging ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/498H01L21/48
CPCH01L23/49822H01L21/4871H01L23/49866
Inventor 韩媛媛郭宏张习敏范叶明
Owner GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS BEIJNG
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