High-performance perovskite solar cell and preparation method thereof

A solar cell and perovskite technology, applied in the field of solar cells, can solve problems such as solar cell device performance and stability to be improved, and achieve the effect of improving device performance and stability

Active Publication Date: 2016-07-06
上海熵朝科技有限公司
View PDF2 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, experiments have shown that the device performance and stability of the solar cell need to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-performance perovskite solar cell and preparation method thereof
  • High-performance perovskite solar cell and preparation method thereof
  • High-performance perovskite solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] The indium tin oxide was cleaned with detergent, sonicated in acetone and ethanol, and then dried with nitrogen to obtain the indium tin oxide electrode layer ITO. The indium tin oxide electrode layer ITO was treated with ultraviolet ozone plasma for 15 minutes, the PEDOT:PSS film was spin-coated at 4500 rpm / 40s by spin coating, and annealed at 120°C for 10 minutes to obtain the hole transport layer PEDOT:PSS. Graphene oxide was prepared from flake expanded graphite by the Hummer method as raw material. According to graphene oxide GO and ammonia solution NH 3 The molar ratio is 1:0 to form an ammonia-modified graphene oxide aqueous solution. The ammonia-modified graphene oxide aqueous solution was spin-coated on the hole transport layer PEDOT:PSS, and annealed at 120°C for 10 min to obtain the ammonia-modified graphene oxide layer GO:NH 3 . In the ammonia-modified graphene oxide layer GO:NH 3 Spin-coat a 30% perovskite precursor solution at a speed of 4000 rpm / 40s, ...

Embodiment 2

[0041] The perovskite solar cell was prepared with reference to the method of Example 1, the difference was that the graphene oxide GO and the ammonia solution NH in the mixed solution 3 The molar ratio is 1:0.3.

[0042] Test the device performance of perovskite solar cells, the conversion efficiency is 16.11%, the open circuit voltage is 1.03V, and the short circuit current density is 22.06mA / cm 2 , with a fill factor of 71%, such as Figure 4 shown.

Embodiment 3

[0044] The perovskite solar cell was prepared with reference to the method of Example 1, the difference was that the graphene oxide GO and the ammonia solution NH in the mixed solution 3 The molar ratio is 1:0.4.

[0045] Test the device performance of perovskite solar cells, the conversion efficiency is 14.49%, the open circuit voltage is 1.01V, and the short circuit current density is 20.90mA / cm 2 , the fill factor is 69%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
current densityaaaaaaaaaa
current densityaaaaaaaaaa
Login to view more

Abstract

The invention relates to a high-performance perovskite solar cell. The high-performance perovskite solar cell comprises an indium tin oxide electrode layer, a hole transport layer PEDOT:PSS, a perovskite layer CH<3>NH<3>PbI<3-x>Cl<x>, an electron transport layer PCBM, a silver electrode layer and an amino-modified graphene oxide layer GO:NH<3>, wherein the indium tin oxide electrode layer, the hole transport layer PEDOT:PSS, the perovskite layer CH<3>NH<3>PbI<3-x>Cl<x>, the electron transport layer PCBM and the silver electrode layer are sequentially arranged; and the amino-modified graphene oxide layer GO:NH<3> is arranged between the hole transport layer PEDOT:PSS and the perovskite layer CH<3>NH<3>PbI<3-x>Cl<x>. The invention further provides a preparation method of the high-performance perovskite solar cell. The amino-modified graphene oxide layer GO:NH<3> is formed on the hole transport layer PEDOT:PSS, and a composite hole transport layer is formed by synergistic action of the amino-modified graphene oxide layer GO:NH<3> and the hole transport layer PEDOT:PSS, so that the device performance and stability of the perovskite solar cell can be effectively improved.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a high-performance perovskite solar cell and a preparation method thereof. Background technique [0002] Solar cells have drawn attention due to their greenness. Among them, perovskite solar cells stand out due to their excellent device performance. In just a few years, the photoelectric conversion efficiency of such cells has increased from 3.1% at the beginning to about 20.3% at present, and the theoretical conversion efficiency can reach more than 25%. , and the preparation method of the battery can use low-temperature full-solution processing and inkjet printing technology to prepare devices quickly and in a large area, with low manufacturing cost and great commercial potential. Therefore, the American "Science" magazine selected perovskite solar cell technology as one of the top ten technological breakthroughs in 2013. Generally, perovskite solar cells include indium tin oxide e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/44H01L51/48H01L51/46H01L51/42
CPCH10K30/00H10K30/80Y02E10/549Y02P70/50
Inventor 杨迎国冯尚蕾高兴宇
Owner 上海熵朝科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap