Method for preparing rhenium disulfide thin film through chemical vapor deposition

A chemical vapor deposition, rhenium disulfide technology, applied in gaseous chemical plating, metal material coating process, coating, etc. problems such as poor grid quality, to achieve the effect of promoting epitaxial growth, uniform number of layers, and low requirements for equipment conditions

Inactive Publication Date: 2016-08-10
SHAANXI NORMAL UNIV
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

One is ammonium perrhenate (NH 4 ReO 4 ) for the Re source to grow ReS 2 , but the precursor decomposition produces more by-products, resulting in the prepared ReS 2 Film lattice quality is very poor and electrical mobility is extremely low
The other uses Re powder and S powder as the source to grow ReS 2 , but because the melting point of Re powder is extremely high (3180°C), the vapor pressure of Re in the general growth temperature range (500-1000°C) is extremely low, resulting in very low growth efficiency of this method, and the large-area preparation of this material cannot be realized
Especially since ReS 2 The weak interlayer force of the material, and the silicon dioxide substrate used in the above method has a large surface atomic diffusion barrier, which makes it easy to grow thick layers on the silicon dioxide substrate, and it is difficult to obtain samples with uniform layers
Therefore, ReS with large area, high quality and uniform layer number 2 The controllable preparation of thin films remains a big challenge

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing rhenium disulfide thin film through chemical vapor deposition
  • Method for preparing rhenium disulfide thin film through chemical vapor deposition
  • Method for preparing rhenium disulfide thin film through chemical vapor deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Mix 1 mg of rhenium powder with a purity of 99.99% and 8 mg of tellurium powder with a purity of 99.9% evenly and spread them evenly in a ceramic boat, then place the freshly stripped mica sheet upside down on the ceramic boat, and push the ceramic boat into the To the central position of the tube furnace heating zone; 80 mg of sulfur powder with a purity of 99.8% is put into another ceramic boat, and the ceramic boat is also pushed into the tube furnace; The furnace temperature was raised to 800°C within 22 minutes, the heating temperature of the sulfur powder was controlled to 200°C, and the temperature was kept constant for 10 minutes, and then naturally cooled to room temperature with the furnace to obtain a two-dimensional rhenium disulfide thin film. Depend on figure 1 It can be seen that the shape, size and number of layers of the obtained sample film are very uniform, and it can be seen from the optical contrast that it is a single layer. figure 2 The Raman sp...

Embodiment 2

[0027] Mix 1 mg of rhenium powder with a purity of 99.99% and 3 mg of tellurium powder with a purity of 99.9% evenly and spread them evenly in a ceramic boat, then put the freshly stripped mica sheet upside down on the ceramic boat, and push the ceramic boat into the To the central position of the tube furnace heating zone; 100mg of sulfur powder with a purity of 99.8% is put into another ceramic boat, and the ceramic boat is also pushed into the tube furnace; under the argon flow of 20 sccm, put The furnace temperature was raised to 900°C within 25 minutes, the heating temperature of the sulfur powder was controlled to 200°C, and the temperature was kept constant for 10 minutes, and then naturally cooled to room temperature with the furnace to obtain a two-dimensional rhenium disulfide thin film. Depend on Figure 5-6 It can be seen that the thickness of the obtained sample is uniform and the shape is relatively regular, and the two characteristic peaks of the Raman spectrum ...

Embodiment 3

[0029] Mix 1 mg of rhenium powder with a purity of 99.99% and 7 mg of tellurium powder with a purity of 99.9% evenly and spread them evenly in a ceramic boat, then put the freshly stripped mica sheet upside down on the ceramic boat, and push the ceramic boat into the To the central position of the tube furnace heating zone; 60 mg of sulfur powder with a purity of 99.8% is put into another ceramic boat, and the ceramic boat is also pushed into the tube furnace; under the argon flow of 20 sccm, put The furnace temperature was raised to 600°C within 20 minutes, the heating temperature of the sulfur powder was controlled to 200°C, and the temperature was kept constant for 10 minutes, and then naturally cooled to room temperature with the furnace to obtain a two-dimensional rhenium disulfide thin film. Depend on Figure 7-8 It can be seen that the size and thickness of the obtained sample are uniform, the shape is hexagonal, and the two characteristic peaks of the Raman spectrum ap...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for preparing a rhenium disulfide thin film through chemical vapor deposition. According to the method, a two-element eutectoid alloy formed by a mixture of rhenium powder and tellurium powder is used as a rhenium source, powdered sulfur is used as a sulfur source, mica is used as a growth substrate, and the two-dimensional rhenium disulfide thin film grows under the argon atmosphere at the temperature ranging from 500 DEG C to 900 DEG C. Compared with an existing rhenium disulfide preparation method, the requirement for device conditions is low, the operation process is simple, the method has the beneficial effects of being low in reaction temperature, high in growth efficiency, even in layer number, high in lattice quality of the obtained product and good in controllability, large-area, high-quality and layer-number-controllable controlled growth of rhenium disulfide is achieved, and a reliable sample preparation method is provided for application of rhenium disulfide in the field of electronic and photoelectron devices.

Description

technical field [0001] The invention belongs to the technical field of preparation of two-dimensional nanometer materials, and in particular relates to a method for preparing a rhenium disulfide thin film. Background technique [0002] The excellent optical, electrical, thermal, and mechanical properties of two-dimensional atomic crystal materials make them have broad application prospects in the fields of electronics, optoelectronics, energy storage devices, and catalysis in the future, and have quickly become a research hotspot in the field of materials. Among them, the anisotropic two-dimensional material rhenium disulfide (ReS 2 ) is a "new star" in the family of two-dimensional materials in recent years. ReS 2 The unique lattice structure endows it with many extraordinary properties. Density functional theory calculations show that the single-layer ReS 2 As a twisted 1T phase, this special structure makes the material anisotropic and produces Peirce distortion, which...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/448
CPCC23C16/305C23C16/448
Inventor 徐华崔芳芳王聪李晓波
Owner SHAANXI NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap