Low-temperature liquid-phase preparation method of indium gallium zinc oxide thin film transistor with high migration rate

Abstract

The invention belongs to the field of semiconductors and microelectronic devices, and particularly relates to a low-temperature liquid-phase preparation method of an indium gallium zinc oxide thin film transistor with the high migration rate. The method comprises the following steps that soluble zinc salt and tin salt are weighed, a solvent is measured, an indium gallium zinc oxide precursor solution with the concentration of 0.01-0.5 mol/L is prepared, and a clear and transparent indium gallium zinc oxide precursor solution is formed through 0.1-2 hour of magnetic stirring and ultrasonic dispersing; an indium gallium zinc oxide thin film is prepared; the indium gallium zinc oxide precursor solution is applied to a substrate precoated with a dielectric layer-grid thin film, preheating treatment at the temperature of 50 DEG C to 150 DEG C is conducted, light wave annealing at certain power, time and temperature is conducted, the indium gallium zinc oxide precursor solution is applied multiple times and annealing treatment is conducted according to the thickness requirement of the indium gallium zinc oxide thin film, and then an indium gallium zinc oxide transparent semiconductor thin film is obtained; source electrode and drain electrodes are deposited on the indium gallium zinc oxide transparent semiconductor thin film, and then the indium gallium zinc oxide thin film transistor is obtained. The indium gallium zinc oxide thin film transistor obtained through the method is high in performance and has an important application prospect in the electronic information field. Through a process of the method, the problems of a general high-temperature solution process, the long process cycle or expensive equipment and the like can be avoided, the cost is low, and the method is suitable for industrialized large-scale production.

Description

technical field [0001] The invention belongs to the field of semiconductors and microelectronic devices, and particularly relates to a low-temperature liquid phase preparation method of a high-mobility indium gallium zinc oxide thin film transistor. The indium gallium zinc oxide thin film transistor has important application prospects in the fields of information electronics and the like. Background technique [0002] After entering the 21st century, display devices have become the main terminal equipment for people to obtain information and exchange information. Thin Film Transistor (Thin Film Transistor), as the key device of active driving technology, has a decisive impact on the overall performance of display devices. So far, the most mature ones are amorphous silicon thin film transistors and polysilicon thin film transistors. However, the disadvantage of amorphous silicon transistors is the low carrier mobility (<1cm 2 / Vs), it is difficult to meet the current driv...

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Problems solved by technology

However, these gas-phase methods usually require a vacuum environment,

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