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Double-sided crystal silicon solar cell and making method thereof

A crystalline silicon solar cell, double-sided technology, applied in circuits, photovoltaic power generation, electrical components, etc., to optimize optical absorption characteristics, optimize surface recombination, and improve quantum conversion efficiency.

Inactive Publication Date: 2017-01-11
TRINASOLAR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the textured structure on the back is conducive to absorbing direct light to a maximum extent, it is not necessarily the best light-absorbing structure for double-sided solar cells, and a higher surface area will bring minority carrier recombination.

Method used

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  • Double-sided crystal silicon solar cell and making method thereof

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Embodiment 1

[0024] like figure 1 As shown, taking the p-type monocrystalline silicon substrate as an example, the double-sided crystalline silicon solar cell provided in this embodiment is provided with a front textured structure 102 on the front surface of the p-type monocrystalline silicon substrate 101, and the front surface is formed by phosphorus doping. The front pn emitter junction 103, the front passivation anti-reflection dielectric layer 105 and the front electrode 107, and the rear planar structure 104, the rear passivation anti-reflection dielectric layer 106 and the rear electrode 108 are sequentially arranged on the back of the p-type single crystal silicon substrate 101 , wherein, the back planar structure 104 is a planar p-type single crystal substrate formed directly on the silicon substrate and formed through a polishing process.

[0025] In this embodiment, the front passivation anti-reflection dielectric layer 105 is a silicon nitride film with a thickness of 70 to 80 ...

Embodiment 2

[0027] like figure 1 As shown, taking an n-type monocrystalline silicon substrate as an example, the double-sided crystalline silicon solar cell provided in this embodiment is provided with a front textured structure 102 on the front surface of an n-type monocrystalline silicon substrate 101, and the front boron doping is formed. The front pn emitter junction 103, the front passivation anti-reflection dielectric layer 105 and the front electrode 107, and the rear planar structure 104, the rear passivation anti-reflection dielectric layer 106 and the rear electrode 108 are sequentially arranged on the back of the p-type single crystal silicon substrate 101 , wherein, the back planar structure 104 is a planar n-type single crystal substrate formed directly on the silicon substrate and formed through a polishing process.

[0028] In this embodiment, the front passivation anti-reflection dielectric layer 105 is a double-layer film of aluminum oxide and silicon nitride, wherein the...

Embodiment 3

[0030] like figure 1 As shown, this embodiment is the situation when the preparation method of the double-sided crystalline silicon solar cell of the present invention is applied to p-type single crystal silicon, and specifically includes the following steps:

[0031] (1) Use an alkaline texturing solution containing potassium hydroxide and isopropanol at a temperature of 80°C to texturize the surface of the p-type single crystal silicon substrate 101 to form a front textured surface 102 and remove the silicon wafer at the same time cutting damage layer;

[0032] (2) Perform phosphorous doping to form the front emitter junction 103: phosphorous doping can be diffused in a tube furnace with a phosphorus oxychloride source, ion implantation or diffusion coated with a phosphorus-containing impurity layer, and the diffusion resistance is 40 to 200Ω / □ ;

[0033] (3) PECVD is used to deposit a process barrier layer of silicon oxide film on the front, with a thickness of 50 to 300n...

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Abstract

The invention discloses a double-sided crystal silicon solar cell. A front flock structure, a front pn emitter junction, a front passivated anti-reflection medium layer and front electrodes are sequentially arranged on the front face of a silicon substrate, and a back planar structure, a back passivated anti-reflection medium layer and back electrodes are sequentially arranged on the back face of the silicon substrate; the double-sided crystal silicon solar cell is characterized in that the back planar structure is a planar silicon substrate which is directly formed on the silicon substrate through a polishing technology; no doped layers are formed on the surface of the back planar structure. The invention further discloses a making method of the double-sided crystal silicon solar cell. The back planar structure is arranged on the double-sided crystal silicon solar cell, so that surface recombination and optical absorption features of minority carriers of the double-sided solar cell are optimized, and quantum conversion efficiency is improved; the making method is simple in technology, low in cost and suitable for large-scale industrial production.

Description

technical field [0001] The invention relates to a double-sided solar cell, in particular to a double-sided crystalline silicon solar cell and a preparation method thereof, belonging to the technical field of solar cell preparation. Background technique [0002] Compared with traditional crystalline silicon solar cells that receive light on one side, double-sided solar cells use two light-receiving surfaces, the front and the back, to obtain higher photocurrent densities and greatly increase power generation. Depending on the installation ground and environment, a photovoltaic power generation system based on bifacial solar cells can achieve a power gain of 10 to 30%. [0003] Double-sided solar cell structure includes: crystalline silicon substrate, front and back textured topography, pn junction emitter, back surface field, passivation anti-reflection dielectric layer, front and back electrodes, etc. Among them, the suede on the back can effectively improve the absorption ...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/0236H01L31/068H01L31/18
CPCH01L31/02168H01L31/02363H01L31/0684H01L31/1804Y02E10/547Y02P70/50
Inventor 盛赟
Owner TRINASOLAR CO LTD
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