High-temperature-tolerance frequency selection wave-transmitting structure and preparation method thereof

A technology of frequency selection and wave-transmitting structure, applied in manufacturing tools, welding equipment, laser welding equipment, etc., can solve the problems of poor thermal shock resistance, poor high temperature oxidation resistance, and high brittleness of porous silicon nitride ceramic materials. Achieve excellent high temperature oxidation resistance, good high temperature resistance, and avoid brittleness problems

Active Publication Date: 2017-05-10
NAT UNIV OF DEFENSE TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The patent uses porous silicon nitride ceramic material as the base material, and high temperature resistant conductive ceramic (TiB 2 or TiN) or high-temperature-resistant metal (one of platinum, tungsten or molybdenum) as the frequency-selective surface material. From the perspective of the selected material system, it has good temperature resistance, but there are also the following obvious deficiencies: 1) The adopted Porous silicon nitride ceramic materials have the disadvantages of poor mechanical properties. At the same time, the porous silicon nitride ceramic materials used have poor thermal shock resistance, high brittleness, and are prone to cracking problems in high and low temperature alternating environments, and have poor reliability; 2) the adopted TiB 2 Or TiN conductive ceramic materials and tungsten and molybdenum metal materials have poor high-temperature oxidation resistance. When used in a high-temperature oxygen-enriched environment, serious electrical performance degradation will occur due to oxidation, which will affect the wave transmission performance of the frequency selection surface.
At the same time, the wave-transmitting material used in this patent is a multi-layer structure, which is relatively complex, and the different layers are bonded by aluminum dihydrogen phosphate adhesive, which has the problem of low interlayer strength.
In addition, the technical solution disclosed in this document does not use the corresponding technology to treat the surface of the porous silicon nitride substrate, so the frequency selective surface prepared on the porous substrate must have the disadvantage of poor quality, and the dimensional stability of the periodic pattern And the electrical performance of each period unit cannot be effectively guaranteed

Method used

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  • High-temperature-tolerance frequency selection wave-transmitting structure and preparation method thereof
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  • High-temperature-tolerance frequency selection wave-transmitting structure and preparation method thereof

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Embodiment 1

[0043] A high temperature resistant frequency selective wave transparent structure of the present invention, such as figure 1 As shown, the frequency-selective wave-transparent structure includes a wave-transparent layer 1, a modified adhesive layer 2, and a frequency-selective layer 3 from the inside to the outside. The wave-transparent layer 1 is a quartz fiber-reinforced quartz composite material, and the modified adhesive layer The junction layer 2 is a quartz glass coating, the frequency selective layer 3 is a silver-palladium glass conductor coating with a periodic structure pattern, the thickness of the bonding layer 2 is 0.1 mm, and the thickness of the silver-palladium glass conductor coating is is 30 μm.

[0044] The method for preparing the high-temperature-resistant frequency-selective wave-transparent structure of this embodiment includes the following steps:

[0045] (1) Determine that the material of the wave-transmitting layer is quartz fiber reinforced quartz...

Embodiment 2

[0056] A high temperature resistant frequency selective wave transparent structure of the present invention, such as figure 1 As shown, the frequency-selective wave-transparent structure includes a wave-transparent layer 1, a modified adhesive layer 2, and a frequency-selective layer 3 from the inside to the outside. The wave-transparent layer 1 is a quartz fiber-reinforced quartz composite material, and the modified adhesive layer The junction layer 2 is a mullite coating, the frequency selective layer 3 is a gold plating layer with a periodic structure pattern, the thickness of the bonding layer 2 is 0.1 mm, and the thickness of the gold plating layer is 2 μm.

[0057] The method for preparing the high-temperature-resistant frequency-selective wave-transparent structure of this embodiment includes the following steps:

[0058] (1) Determine that the material of the wave-transmitting layer is quartz fiber reinforced quartz composite material, and use the quartz fiber reinforc...

Embodiment 3

[0064] A high temperature resistant frequency selective wave transparent structure of the present invention, such as figure 1 As shown, the frequency selective wave-transparent structure includes a wave-transparent layer 1, a modified bonding layer 2, and a frequency-selective layer 3 from the inside to the outside, and the wave-transparent layer 1 is an aluminosilicate fiber-reinforced silica composite material, The modified bonding layer 2 is a mullite coating, the frequency selective layer 3 is a silver-palladium glass conductor coating with a periodic structure pattern, the thickness of the bonding layer 2 is 0.1mm, and the silver-palladium glass The thickness of the conductive coating was 30 μm.

[0065] The method for preparing the high-temperature-resistant frequency-selective wave-transparent structure of this embodiment includes the following steps:

[0066] (1) Determine that the material of the wave-transmitting layer is aluminosilicate fiber-reinforced silica comp...

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Abstract

The invention discloses a high-temperature-tolerance frequency selection wave-transmitting structure. The high-temperature-tolerance frequency selection wave-transmitting structure successively comprises a wave-transmitting layer, a modification bonding layer and a frequency selection layer from inside to outside, wherein the wave-transmitting layer is made of a continuous fiber reinforced ceramic-based wave-transmitting composite material; the modification bonding layer is made of a low-dielectric-constant material; the frequency selection layer is a noble metal physical plating layer or a noble metal glass conductor coating with periodic structure patterns. The high-temperature-tolerance frequency selection wave-transmitting structure can tolerate high temperature of 700 DEG C or more, and has excellent high temperature tolerance. The invention also provides a production method of the high-temperature-tolerance frequency selection wave-transmitting structure; the modification bonding layer is produced by using a plasma spraying process; the thermal damage to the substrate can be avoided, so that the substrate has high strength retention rate; the size accuracy of the frequency selection layer produced by a laser processing process can be higher than 20 microns; the frequency selection layer has high size accuracy.

Description

technical field [0001] The invention mainly relates to a frequency selective wave transparent structure and a preparation process thereof, in particular to a high temperature resistant frequency selective wave transparent structure and a preparation method thereof. Background technique [0002] Wave-transparent materials and structures (radome, antenna window, radome, etc.) are important components of antennas and communication systems. They play an important role in protecting antennas and communication systems and maintaining the shape of aircraft. Wave function requirements, so that it can work properly. As antennas and communication systems have higher performance requirements for omnidirectional wave transmission, wide frequency band (or multi-frequency points), frequency selective wave transmission, and stealth, traditional wave-transparent materials and structures can no longer meet the requirements. [0003] The frequency selective surface is a single-screen or mult...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/14C04B35/82C04B35/80C04B41/90C03C8/00C03C3/064B23K26/362
CPCB23K26/361C03C3/064C03C8/00C03C2201/30C03C2201/40C04B35/14C04B35/80C04B35/82C04B41/4527C04B41/52C04B41/90C04B41/5024C04B41/5116C04B41/5022
Inventor 刘海韬郝璐黄文质王瑞王秀芝姜如
Owner NAT UNIV OF DEFENSE TECH
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