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P-type ZnRhMo amorphous oxide semiconductor film and preparation method thereof

A technology of amorphous oxide and semiconductor, which is applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., to achieve the effect of promoting development and good material properties

Active Publication Date: 2017-05-24
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the currently reported AOS TFTs are all n-type channel, lack of p-type channel AOS TFT, which greatly restricts the application of AOS TFT in new generation display, transparent electronics and many other fields.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] (1) With high purity ZnO, Rh 2 o 3 and Cu 2 O powder as raw material, mixed, ground, N at 1100°C 2 Sintering under the atmosphere to make ZnRhCuO ceramic sheet as the target material, in which the atomic ratio of Zn, Rh and Cu is 1:2:0.5;

[0027] (2) Using the pulsed laser deposition (PLD) method, install the substrate and the target in the PLD reaction chamber, and evacuate to a vacuum degree of 9×10 -4 Pa;

[0028] (3) Pass into O 2 As the working gas, the gas pressure is 10Pa, and the substrate temperature is 25°C. The target is bombarded with pulsed laser, and the atoms and molecules on the surface of the target are melted and deposited on the substrate to form a thin film to obtain p-type ZnRh 2 Cu 0.5 o 4.25 Amorphous thin film.

[0029] Using quartz as the substrate, p-type ZnRh was prepared according to the above growth steps 2 Cu 0.5 o 4.25 The film was tested for its structure, electrical and optical properties. The test results are: the film is am...

Embodiment 2

[0031] (1) With high purity ZnO, Rh 2 o 3 and Cu 2 O powder as raw material, mixed, ground, N at 1100°C 2 Sintering under the atmosphere to make ZnRhCuO ceramic sheet as the target material, in which the atomic ratio of Zn, Rh, and Cu is 1.5:2:1;

[0032] (2) Using the pulsed laser deposition (PLD) method, install the substrate and the target in the PLD reaction chamber, and evacuate to a vacuum degree of 9×10 -4 Pa;

[0033] (3) Pass into O 2As the working gas, the gas pressure is 12Pa, and the substrate temperature is 250°C. The target is bombarded with pulsed laser, and the atoms and molecules on the surface of the target are melted and deposited on the substrate to form a thin film. 2 Naturally cooled to room temperature in the atmosphere to obtain p-type ZnRh 2 Cu 0.5 o 4.25 Amorphous thin film.

[0034] Using quartz as the substrate, p-type Zn was prepared according to the above growth steps 1.5 Rh 2 CuO 5 The film was tested for its structure, electrical and...

Embodiment 3

[0036] (1) With high purity ZnO, Rh 2 o 3 and Cu 2 O powder as raw material, mixed, ground, N at 1050°C 2 Sintering under the atmosphere to make ZnRhCuO ceramic sheet as the target material, in which the atomic ratio of Zn, Rh and Cu is 2:2:1;

[0037] (2) Using the pulsed laser deposition (PLD) method, install the substrate and the target in the PLD reaction chamber, and evacuate to a vacuum degree of 9×10 -4 Pa;

[0038] (3) Pass into O 2 As the working gas, the gas pressure is 13Pa, and the substrate temperature is 500°C. The target is bombarded with pulsed laser, and the atoms and molecules on the surface of the target are melted and deposited on the substrate to form a thin film. 2 Naturally cooled to room temperature in the atmosphere to obtain p-type Zn 2 Rh 2 CuO 5.5 Amorphous thin film.

[0039] Using quartz as the substrate, p-type Zn was prepared according to the above growth steps 2 Rh 2 CuO 5.5 The film was tested for its structure, electrical and opti...

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Abstract

The invention discloses a p-type ZnRhMo amorphous oxide semiconductor film. In ZnRhMo, Zn is Zn(+2), Rh is Rh(+3), and the two are combined with O to form a p-type conductive basal body of a material, wherein M is one from Cu, Ni and Sn and is at a suboxidation chemical state, i.e., when M is Cu, the M is Cu(+1), when M is Ni, the M is Ni(+2), and when M is Sn, the M is Sn(+2); and M is doped in the basal body to form p-type conduction, M acts with Zn and Rh to form a space network structure, and the three communicate with one another at an amorphous state to function as a cavity transmission channel. The invention further discloses a method for preparing the p-type ZnRhMo amorphous oxide semiconductor film. By taking a sintered ZnRhCuO ceramic chip as a target material, a p-type ZnRhCuO amorphous film is prepared by use of a pulse laser depositing method, the cavity concentration is 10<13> to 10<15>cm<-3>, and the visible light transmittance is greater than or equal to 87%. The p-type ZnRhMo amorphous oxide semiconductor film disclosed by the invention can be applied to a p-type amorphous film transistor.

Description

technical field [0001] The invention relates to an amorphous oxide semiconductor thin film, in particular to a p-type amorphous oxide semiconductor thin film and a preparation method thereof. Background technique [0002] Thin film transistor (TFT) is one of the core technologies in the field of microelectronics, especially display engineering. At present, TFT is mainly based on amorphous silicon (a-Si) technology, but a-Si TFT is opaque, has strong photosensitivity, and needs to add a mask layer. The pixel aperture ratio of the display screen is low, which limits the display performance. And the mobility of a-Si is low (~2 cm 2 / Vs), cannot meet some application requirements. Although TFT based on polysilicon (p-Si) technology has high mobility, its device uniformity is poor and its fabrication cost is high, which limits its application. In addition, organic semiconductor thin-film transistors (OTFT) have also been studied a lot, but the stability of OTFT is not high, an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/24H01L21/02H01L29/786
CPCH01L21/02422H01L21/02565H01L21/02631H01L29/247H01L29/78693
Inventor 吕建国孟璐
Owner ZHEJIANG UNIV
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