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Double-face diffusion technology of solar battery

A solar cell, double-sided diffusion technology, applied in the direction of diffusion/doping, circuit, photovoltaic power generation, etc., can solve the problems of unstable coating solution, complicated process, unfavorable industrialization, etc., achieve good sealing effect and reliability, The uniformity of diffusion is good, and the effect of improving conversion efficiency

Active Publication Date: 2017-06-13
DONGFANG HUANSHENG PHOTOVOLTAIC (JIANGSU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Whether it is screen printing method or gas phase carrying source method, it takes 2-4 steps to complete the doping of the required surface. The process is complicated and not conducive to industrialization.
[0003] Compared with the above two existing more common diffusion methods, the impurity diffusion layer is made by using the coating to carry impurity elements. The coating liquid in the prior art is unstable and prone to denaturation, agglomeration, precipitation and other shortcomings. And the composition is complex, the cost of the diffusion process is high, and the process is complicated, which is not conducive to industrial production and combined utilization with existing processes

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Embodiment 1: A double-sided diffusion process for solar cells, the steps are:

[0026] a) Pretreatment of crystalline silicon wafers: select N-type crystalline silicon wafers, and wash the crystalline silicon wafers after texturing;

[0027] B) oxide layer is formed: the crystalline silicon chip that step a) is obtained is put into the quartz tube of oxidation process, reaction conditions: O 2 : 8-10L / M (Oxygen flow rate, unit L / min, the same below), H 2 : 10-12L / M (hydrogen flow, unit liter / min, the same below), t: 45-50min (duration, the same below), T: 840-850°C (temperature, the same below);

[0028] c) Double-sided diffusion: put the gallium oxide powder used for the diffusion source into a ceramic crucible, and put the ceramic crucible and the crystalline silicon wafer obtained in step b) into a quartz tube together, the reaction conditions: T=1150° C. t=85min, N 2 =600-700ml / min (nitrogen flow, unit ml / min, the same below) H 2 : 50-60ml / min (hydrogen gas flo...

Embodiment 2

[0031] Embodiment 2: a double-sided diffusion process for solar cells, the steps are:

[0032] a) Pretreatment of crystalline silicon wafers: select N-type crystalline silicon wafers, and wash the crystalline silicon wafers after texturing;

[0033] B) oxide layer is formed: the crystalline silicon chip that step a) is obtained is put into the quartz tube of oxidation process, reaction condition: O 2 : 10L / M, H 2 : 14L / M, t: 60min, T: 850℃;

[0034] c) Double-sided diffusion: put the gallium oxide powder used for the diffusion source into a ceramic crucible, and put the ceramic crucible and the crystalline silicon wafer obtained in step b) into a quartz tube together. Reaction conditions: T=1150°C t=95min, N 2 =700ml / minH 2 : 75ml / min, square resistance: 40Ω / sq.

[0035] Gallium oxide powder is used for double-sided diffusion, and the conversion efficiency reaches 20.0% under the reaction conditions of this embodiment.

Embodiment 3

[0036] Embodiment 3: A double-sided diffusion process for solar cells, the steps are:

[0037] a) Pretreatment of crystalline silicon wafers: select N-type crystalline silicon wafers, and wash the crystalline silicon wafers after texturing;

[0038] B) oxide layer is formed: the crystalline silicon chip that step a) is obtained is put into the quartz tube of oxidation process, reaction conditions: O 2 : 9L / M, H 2 : 13L / M, t: 55min, T: 850℃;

[0039] c) Double-sided diffusion: put the gallium oxide powder used for the diffusion source into a ceramic crucible, and put the ceramic crucible and the crystalline silicon wafer obtained in step b) into a quartz tube together, the reaction conditions: T=1150°C t=90min, N 2 =650ml / minH 2 : 70ml / min, square resistance: 45Ω / sq.

[0040] Gallium oxide powder is used for double-sided diffusion, and the conversion efficiency reaches 20.0% under the reaction conditions of this embodiment.

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Abstract

The invention discloses a double-face diffusion technology of a solar battery. According to the technology, a solid-state impurity source gallium oxide is adopted; the impurity has stable performance, simple components and good uniformity; a technological process has a simple technology and low cost, and is easily compatible with existing production line and production equipment.

Description

technical field [0001] The invention relates to the field of photovoltaic technology, in particular to a double-sided diffusion process for solar cells. Background technique [0002] The traditional crystalline silicon solar cell boron diffusion (N-type silicon substrate) process is generally single-sided diffusion, and it is not necessary to place the surfaces of the diffused impurities in the carrier face to face. In the diffusion furnace, only the light-receiving surface of the solar cell is diffused by boron. The emitter is formed, and the heavily doped passivation on the back of the battery, double-sided batteries, N-type batteries, etc. all require diffusion on both sides to diffuse different impurity elements. The advantage of double-sided diffusion is that it can getter the non-light-receiving side, thereby improving The battery voltage output can receive incident light on both sides, so that the overall output power of the solar battery array can be increased by 10-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B31/02H01L31/18
CPCC30B31/02H01L31/1876Y02E10/50Y02P70/50
Inventor 樊华王丹萍蒋志强徐建钱明明彭彪
Owner DONGFANG HUANSHENG PHOTOVOLTAIC (JIANGSU) CO LTD
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