Preparation method of device for terahertz wave detection

A terahertz and device technology, applied in the field of detectors, can solve problems such as poor sensitivity, low radiant power of terahertz light source, narrow detection frequency, etc., and achieve the effect of improving mechanical strength

Active Publication Date: 2018-09-25
SUZHOU UNIV OF SCI & TECH
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Since the radiation power of terahertz light sources is generally relatively low at present, the existing devices for terahertz wave detection generally have slow response speed (pyroelectric detectors), narrow detection frequency (Schottky diodes), and poor sensitivity. (Golaycell detector) and the need for low temperature work (bolometer), so it is particularly important to develop a high-speed, high-sensitivity, high-signal-to-noise device for terahertz wave detection that can work at room temperature

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] A method for preparing a device for terahertz wave detection, comprising the following steps:

[0056] (1) Under the protection of nitrogen, mix ammonium hexachloroiridate, nickel nitrate hydrate, ammonium molybdate, ethanol and propionic acid; then reflux and stir for 5 minutes, then add ammonia water; react for 10 minutes and cool to room temperature naturally, add ethyl acetate Ester polysettling and centrifugation; washing the centrifuged precipitate with water and dispersing it in ethanol to obtain a dispersion system; then adding strontium nitrate, cobalt nitrate, and water, stirring for 10 minutes, adding samarium tricene, stirring for 1 hour, to obtain a support layer precursor;

[0057] (2) Add polyvinyl alcohol, hydrogen peroxide and iron tetraphenylporphyrin to the dispersion system, stir at 50°C for 1 hour, then add ethyl naphthoyl acetate and dibutyl phthalate, reflux and stir for 10 minutes, then Concentrate to obtain a concentrate with a solid content of ...

Embodiment 2

[0066] A method for preparing a device for terahertz wave detection, comprising the following steps:

[0067] (1) Under the protection of nitrogen, mix ammonium hexachloroiridate, nickel nitrate hydrate, ammonium molybdate, ethanol and propionic acid; then reflux and stir for 5 minutes, then add ammonia water; react for 10 minutes and cool to room temperature naturally, add ethyl acetate Ester polysettling and centrifugation; washing the centrifuged precipitate with water and dispersing it in ethanol to obtain a dispersion system; then adding strontium nitrate, cobalt nitrate, and water, stirring for 10 minutes, adding samarium tricene, stirring for 1 hour, to obtain a support layer precursor;

[0068] (2) Add polyvinyl alcohol, hydrogen peroxide and iron tetraphenylporphyrin to the dispersion system, stir at 50°C for 1 hour, then add ethyl naphthoyl acetate and dibutyl phthalate, reflux and stir for 10 minutes, then Concentrate to obtain a concentrate with a solid content of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the technical field of detectors, and in particular relates to a device for terahertz wave detection and a preparation method thereof. Based on the AlGaN / GaN High Electron Mobility Field Effect Transistor (HEMT) structure, the AlGaN / GaN layer is prepared by substrate design and epitaxy; then the active region mesa, gate dielectric, and ohmic contact are prepared The window, electrode, and the two-dimensional electron gas in the field effect transistor obtained have high electron concentration and mobility, and a spectrum detection device that can detect THz waves at a high speed, high sensitivity, and high signal-to-noise ratio at room temperature is obtained, and finally realizes Detection of terahertz waves.

Description

technical field [0001] The invention belongs to the technical field of detectors, and in particular relates to a method for preparing a device for terahertz wave detection. Background technique [0002] Due to the high frequency of terahertz wave, its spatial resolution is also high; and because its pulse is very short (picosecond level), it has high time resolution. Terahertz imaging technology and terahertz spectroscopy technology thus constitute the two main key technologies for terahertz applications. At the same time, because terahertz energy is very small and will not cause damage to matter, it has more advantages than X-rays. In addition, since the resonance frequency of the vibration and rotational frequency of biological macromolecules is in the terahertz band, terahertz has good application prospects in the agricultural and food processing industries such as grain selection and selection of excellent strains. The vibration and rotational energy levels of many bio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/113G01J1/42
CPCG01J1/42H01L31/113H01L31/1848H01L31/1852Y02P70/50
Inventor 孙云飞班建民陶重犇刘传洋
Owner SUZHOU UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap