Preparation methods of benzocyclobutene functionalized cage type polysilsesquioxane (POSS) and resins of benzocyclobutene functionalized cage type polysilsesquioxane

Abstract

The invention discloses preparation methods of benzocyclobutene functionalized cage type polysilsesquioxane (POSS), shown in a formula (IV), and resins of the benzocyclobutene functionalized cage type POSS. The preparation method of the benzocyclobutene functionalized cage type POSS comprises the steps of adding a toluene solution of OVPOSS and 4-(1,1-dimethyl-1-hydrogen)silicon-base benzocyclobutene into a reactor, replenishing the reactor with nitrogen for protecting, adding a tetrahydrofuran solution of chloroplatinic acid, carrying out a reaction at the temperature of 60-90 DEG C, separating and purifying the materials obtained after the reaction is finished so as to obtain the benzocyclobutene functionalized cage type POSS. The benzocyclobutene functionalized cage type POSS can be further prepared into body polymers or solution polymers, and can be added into matrix resins so as to form nano composite materials. According to the preparation methods, the POSS is cleverly introduced into the benzocyclobutene resin by means of a simple and efficient hydrosilylation reaction. The resins prepared by the methods provided by the invention have excellent heat stability, mechanical properties and electrical properties, thus being suitable for being used as interlayer dielectric films or packaging materials in the fields such as micro-electronics industry and national defense aerospace. The formula (IV) is described in the description.

Description

technical field [0001] The invention belongs to macromolecular compounds and their preparation, and relates to a preparation method of benzocyclobutene-functionalized cage polysilsesquioxane (BCB-POSS for short) and its resin. The resin prepared by the invention has excellent thermal stability, mechanical properties and electrical properties, and is suitable for use as an interlayer dielectric film or packaging material in the fields of microelectronics industry, national defense, aerospace and the like. Background technique [0002] With the rapid development of the microelectronics industry, the research and development of high-performance low-dielectric constant materials have been highly valued. As the size of VLSI gradually shrinks and the link lines inside the chip become denser, the transmission delay and cross-interference of signals are caused. In order to solve these problems, materials are required to meet comprehensive properties such as low dielectric, low loss...

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Problems solved by technology

[0007] In the prior art, there are many reports on benzocyclobutene resins abroad, such as: U.S.Pat.5882836, 1999; Journal of Polymer Science, Part A: Polymer Chemistry, 2011, 49, 381-391; Chinese patent CNL200710111698. 4 etc. U.S. Patent (U.S.Pat.5882836, 1999) utilizes 4-bromobenzocyclobutene and tetramethyldivinyldisiloxane to bridge the tetramethyldivinylsiloxane prepared by HECK reaction The benzocyclobutene (DVSBCB) monomer can be polymerized to obtain a silicone resin with better comprehensive properties. Although it shows better electrical and thermal properties, this type of resin cannot meet the T requirements at the same time. 0 >450℃, dielectric constant k<2.20; the dielectric constant of existing foreign commercialized DVSBCB resin is 2.65, which limits the application of materials in the microelectronics industry

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