Electromagnetic field near-field imaging system and method based on pulsed light detection magnetic resonance

Abstract

The invention discloses an electromagnetic field near-field imaging system and method based on pulsed light detection magnetic resonance. The system consists of a laser pump optical path, a microwave source, a diamond NV color-center probe, a CCD camera unit, a synchronization system, a displacement scanning platform, control software and a data analysis imaging system. In the system, a large diamond single crystal containing the NV color-center is used as a detection unit, a static magnetic field is used to split a magnetic resonance peak of the diamond NV color-center into eight peaks, the eight resonance peaks correspond to four crystal axis directions <111>, <1-11>, <-111>, <11-1> of a diamond lattice structure, by measuring the Rabi frequency of each resonance peak, the strength of a circularly polarized microwave field perpendicular to the corresponding crystal axis direction is obtained, and through comprehensive calculation of the microwave field strengths in the four directions, the strength and direction of a microwave vector are then reconstructed. Through the microwave near-field high-resolution imaging of a local region of a microwave chip under measurement, the quantitative data can be provided for the failure analysis of the chip.

Description

technical field [0001] The invention belongs to the field of electromagnetic near-field imaging, and relates to an electromagnetic near-field imaging system and method. Background technique [0002] With the continuous development of microwave radio frequency technology, microwave and millimeter wave technology has become a hot technology in 5G communication, automatic driving, military aerospace, consumer electronics and other aspects due to its advantages of high bandwidth, miniaturization, and high integration. Millimeter-wave near-field imaging technology has broad applications in high-resolution target recognition and gesture detection and interaction. The detection and imaging of the near-field distribution of the surface electromagnetic field of microwave and millimeter wave devices is of great significance for the promotion and application of microwave and millimeter wave technology. For a long time, in the field of microwave and radio frequency, there is still a la...

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Problems solved by technology

[0006] The above-mentioned currently popular methods mainly have the following problems: 1. Software simulation and numerical calculation methods In the case of simulating microwave and millimeter-wave high-frequency and high-integration chips, due to the complexity of the near-field of the electromagnetic field, the software simulation cannot avoid certain distortions

2. Using a traditional black box network analyzer to measure the S-parameters of microwave and millimeter wave devices can only measure the external characteristics of the device, and cannot explain the near-field distribution characteristics of the internal electromagnetic field of the device

3. Using a field strength meter with a special high-frequency antenna to scan the surface of microwave and millimeter-wave devices, because the size of the special high-frequency antenna itself is often relatively large, the scanning accuracy is limited; in addition, the special high-frequency antenna itself is Made of metal, the antenna itself disturbs the electromagnetic field, and the measured field is inaccurate

[0007] Under the above technical background, for the near-field electromagnetic field imaging scene on the surface of microwave and millimeter-wave chips, the existing microwave near-field imaging analysis methods do not meet the requirements

Therefore, for the near-field electromagnetic field imaging scene on the surface of microwave and millimeter-wave chips, the existing microwave near-field imaging analysis methods do not meet the requirements.

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