Manufacturing method of silicon-based solar cell P-type surface tunneling oxidation and passivation contact

Abstract

The invention relates to a manufacturing method of silicon-based solar cell P-type surface tunneling oxidation and passivation contact. The manufacturing method comprises the steps of: (1) cleaning the surface of a monocrystalline silicon wafer by using a solution after treatment of a previous process, so as to remove a surface oxide layer; (2) oxidizing the surface of the monocrystalline silicon wafer to form an ultra-thin tunneling oxide layer; (3) depositing a silicon thin layer on the ultra-thin tunneling oxide layer by utilizing a chemical vapor deposition method, and completing boron doping of the silicon thin layer; (4) oxidizing and annealing the silicon wafer, so as to further improve the microstructure and performance of the silicon layer; (5) depositing a silicon nitride passivation anti-reflection layer on the boron-doped silicon thin layer by adopting a plasma-enhanced chemical vapor deposition method; (6) and printing metal electrodes on the surface of the silicon nitride passivation anti-reflection layer, thereby completing the manufacturing process. The manufacturing method can significantly reduce the surface recombination of the cell panels, achieves an excellent passivation effect and increases an open circuit voltage; and the product has good thermal stability, and a special low-temperature process does not need to be developed, thus the cost is reduced.

Description

technical field [0001] The invention relates to a method for manufacturing a solar silicon wafer, in particular to a method for manufacturing a P-type surface tunneling oxidation passivation contact of a silicon-based solar cell. Background technique [0002] In order to improve the efficiency of silicon-based solar cells, it is necessary to passivate the surface of the cell well to reduce the recombination of surface defects and increase the open circuit voltage of the cell. The passivation methods currently applied to the P-type surface of cells mainly include full-surface re-doping, selective re-doping, and growth and deposition of silicon oxide, silicon nitride, silicon oxide / silicon nitride stacks and other structures. However, these structures have a limited passivation effect on the P-type surface of the cell, and it is inevitable to destroy all or part of the passivation layer in the subsequent process of metallization and current extraction, so that the metal electr...

AI Technical Summary

Problems solved by technology

However, these structures have a limited passivation effect on the P-type surface of the cell, and it is inevitable to destroy all or part of the passivation layer in the subsequent process of metallization and extraction of current, so that the metal electrode and the silicon wafer directly form a direct contact. Ohmic contact, which leads to great recombination in the metal contact area and affects the electrical properties of the cell

Images