Formaldehyde sensor based on organic field effect transistor

A formaldehyde sensor and organic field technology, applied in the field of sensors, can solve the problems of pollution, poor flexibility of formaldehyde sensors, high detection limit of formaldehyde sensors, etc., and achieve the effect of solving secondary pollution, excellent water absorption characteristics, and easy industrialized large-scale production

Active Publication Date: 2018-01-09
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problem that the detection limit of the existing formaldehyde sensor is not high, the present invention provides a formaldehyde sensor based on an organic field effect tube and its preparation

Method used

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  • Formaldehyde sensor based on organic field effect transistor
  • Formaldehyde sensor based on organic field effect transistor

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0036] The preparation method of the organic semiconductor layer can be one of plasma-enhanced chemical vapor deposition, thermal oxidation, spin coating, vacuum evaporation, drop film, imprinting, printing or air spray; the thickness of the organic semiconductor layer 4 is 50 ~120nm.

[0037] The materials of the gate electrode, the source electrode and the drain electrode are all one or more of graphene, carbon nanotubes, metal elemental nanowires, zinc oxide, titanium oxide, indium tin oxide or polymer electrode materials, and the preparation method It can be one of various deposition methods such as vacuum thermal evaporation, magnetron sputtering, plasma-enhanced chemical vapor deposition, screen printing, printing, and spin coating. The thickness of the gate electrode, the source electrode and the drain electrode are all 50-80 nm.

[0038] The metal elemental nanowires are iron nanowires, copper nanowires, silver nanowires, gold nanowires, aluminum nanowires, nickel nanowire...

Example Embodiment

[0051] Example 1

[0052] The preparation method is as follows:

[0053] ① Thoroughly clean the PI substrate sputtered with 50nm ITO as the gate electrode, and dry it with dry nitrogen after cleaning;

[0054] ②Prepare a PS film on ITO by spin coating to form a gate insulating layer of 100nm;

[0055] ③ Heat and bake the spin-coated PS film;

[0056] ④ Spin-coating 100nm of organic semiconductor layer with a mass ratio of indigo:diatom mud of 97:3 on the gate insulating layer;

[0057] ⑤The copper source electrode and the drain electrode of 80nm are prepared by vacuum evaporation.

[0058] Test the formaldehyde response characteristics of the device, and measure the saturation current I of the device SD = 6μA, carrier mobility μ = 2×10 -3 cm 2 / Vs, threshold voltage V TH =-14V, good response to formaldehyde at room temperature.

Example Embodiment

[0059] Example 2

[0060] The preparation method is as follows:

[0061] ① Thoroughly clean the PEI substrate sprayed with 80nm silver nanowires as the gate electrode, and dry it with dry nitrogen after cleaning;

[0062] ②Prepare PMMA film on silver nanowires by spin coating to form gate insulating layer 520nm;

[0063] ③ Heat and bake the spin-coated PMMA film;

[0064] ④ Spin-coating the indigo blue: diatom mud on the gate insulating layer with an organic semiconductor layer with a mass ratio of 94:6 at 120nm;

[0065] ⑥Prepare 70nm silver source electrode and drain electrode by vacuum evaporation.

[0066] Test the formaldehyde response characteristics of the device, and measure the saturation current I of the device SD =12μA, carrier mobility μ =0.004cm 2 / Vs, threshold voltage V TH =-16V, good response to formaldehyde at room temperature.

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Abstract

The invention belongs to the technical field of sensors, and discloses a formaldehyde sensor based on an organic field effect transistor, and a preparation method thereof, used for solving the problemthat the existing formaldehyde sensor is high in lower limit of detection. The formaldehyde sensor based on the organic field effect transistor provided by the invention comprises a substrate, a gridelectrode, a grid insulation layer and an organic semiconductor layer sequentially arranged from the bottom up, wherein a source electrode and a drain electrode are connected with the upper end of the organic semiconductor layer, the organic semiconductor layer is prepared by mixing indigo blue or indigo blue derivatives with diatom ooze, and the mass percentage of the diatom ooze in the organicsemiconductor layer is 3%-20%. According to the method provided by the invention, the problem that the existing formaldehyde sensor is high in lower limit of detection is solved, and the problems thatthe existing formaldehyde sensor is poor in flexibility and prone to pollute environment are also solved.

Description

technical field [0001] The invention belongs to the technical field of sensors, and in particular relates to a formaldehyde sensor based on an organic field effect tube and a preparation method thereof. Background technique [0002] Formaldehyde is a colorless gas with a pungent smell, which is irritating to human eyes and nose, and is closely related to human social activities. With the development of modernization, the accurate measurement of formaldehyde is very important in daily life, meteorology, It plays an increasingly important role in medicine and industrial and agricultural production. [0003] There are many types of formaldehyde sensors. At present, the research hotspots at home and abroad are mainly concentrated on formaldehyde oxide gas sensors, formaldehyde gas molecular sieve sensors, formaldehyde surface acoustic wave gas sensors, visual fluorescent formaldehyde sensors and formaldehyde gas electronic noses. However, the traditional formaldehyde sensor sti...

Claims

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Application Information

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IPC IPC(8): H01L51/05H01L51/40G01N27/414
Inventor 于军胜范惠东庄昕明杨付强
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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