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A method for rapid release of light-field-regulated genes in gene transfection

A technology for gene transfection and gene regulation, which is applied in the field of biomedicine, can solve the problems of cell activity influence and complicated operation, and achieve the effects of less damage to cells and tissues, simple modification methods, and easy promotion and application

Active Publication Date: 2020-10-16
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the operation of the external electric field is complicated, and the voltage or current has a certain influence on the cell activity.

Method used

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  • A method for rapid release of light-field-regulated genes in gene transfection
  • A method for rapid release of light-field-regulated genes in gene transfection
  • A method for rapid release of light-field-regulated genes in gene transfection

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] 1) Diffusion depth of boron atoms is 400nm, diffusion concentration is 1×10 20 atom / cm 2 The p+ / n-type silicon wafers were cut into square pieces of 1cm×1cm and sterilized by high temperature and high pressure for later use. The silicon wafer has good biocompatibility, such as figure 1 shown. The process of preparing the p-DNA / lipofectamine complex is as follows: take an appropriate amount of lipofectamine and disperse it in PBS buffer, and get an appropriate amount of p-DNA and disperse it in PBS buffer (wherein V lipofectamine :M p-DNA =3 μL: 1 μg), stand at room temperature for 10 minutes, then add the p-DNA dispersion solution dropwise to the lipofectamine dispersion solution, and leave it at room temperature for 5 minutes. Soak the substrate in the complex solution, 500 μL solution / well, and place at 4°C for 12h.

[0024] 2) After the adsorption process was completed, the substrate was gently rinsed with PBS for 3 times and then with ultrapure water for 3 time...

Embodiment 2

[0028] 1) Diffusion depth of boron atoms is 200nm, diffusion concentration is 1×10 18 atom / cm 2 The p+ / n-type silicon wafers were cut into square pieces of 1cm×1cm and sterilized by high temperature and high pressure for later use. The process of preparing the p-DNA / lipofectamine complex is as follows: take an appropriate amount of lipofectamine and disperse it in PBS buffer, and get an appropriate amount of p-DNA and disperse it in PBS buffer (wherein V lipofectamine :M p-DNA =3 μL: 1 μg), stand at room temperature for 10 minutes, then add the p-DNA dispersion solution dropwise to the lipofectamine dispersion solution, and leave it at room temperature for 5 minutes. Soak the substrate in the complex solution, 500 μL solution / well, and place at 4°C for 12h.

[0029] 2) After the adsorption is completed, gently rinse the substrate 3 times with PBS and then gently rinse 3 times with ultrapure water, then place it in a new well plate, and inoculate cells with a cell inoculatio...

Embodiment 3

[0031] 1) Diffusion depth of boron atoms is 200nm, diffusion concentration is 1×10 18 atom / cm 2 The p+ / n-type silicon wafers were cut into 1cm×1cm square pieces. Soak the substrate in a chitosan solution (concentration: 5 mg / ml), soak for 6 hours, rinse gently with PBS for 3 times and then with ultrapure water for 3 times, sterilize with ultraviolet light for 30 minutes, and set aside.

[0032] 2) The process of preparing the p-DNA / lipofectamine complex is as follows: take an appropriate amount of lipofectamine and disperse it in PBS buffer, and take an appropriate amount of p-DNA and disperse it in PBS buffer (wherein V lipofectamine :M p-DNA =3 μL: 1 μg), stand at room temperature for 10 minutes, then add the p-DNA dispersion solution dropwise to the lipofectamine dispersion solution, and leave it at room temperature for 5 minutes. Soak the polymer layer-modified substrate prepared in step 1 in the complex solution, 500 μL solution / well, and place at 4° C. for 12 h.

[0...

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Abstract

The present invention discloses a method for regulating the rapid releasing of a gene under the action of a light field in gene transfection. According to the method, a p+ / n type or n+ / p type silicon-based plate having a photovoltaic effect is used as a gene bearing platform to adsorb plasmid or a plasmid / vector complex and culture cells; a polymer film layer modified silicon-based plate can be used as a gene bearing platform; after cell culture, gene can be rapidly released through light field irradiation, and gene transfer and expression can be completed through cell intake; and the boron diffusion depth in the p+ / n type silicon-based plate is 100-600 nm, the diffusion concentration is 1*10<15>-5*10<18> atoms / cm<2>, the phosphorus diffusion depth in the n+ / p type silicon-based plate is 50-500 nm, and the diffusion concentration 5*10<15>-1*10<20> atoms / cm<2>. According to the present invention, the method can be widely used in the fields of gene function research, gene treatment and the like.

Description

technical field [0001] The invention belongs to the field of biomedicine, and in particular relates to a method for rapid release of genes that can be regulated by light fields in gene transfection. Background technique [0002] The 21st century is the century of life sciences, which has become a consensus among people, and life sciences have gradually become the common exploration fields of biology, physics, chemistry, informatics and other sciences. With the development of life sciences, significant progress has been made in the research of life science technologies such as cell reprogramming and cell therapy, and these technologies are expected to be widely used in biomedical research and clinic. Among these technologies, the transfection and expression of specific genes in the stage of in vitro cell culture is the main technical link. Moreover, gene transfection itself is also the main means of gene function research, gene therapy and other technologies. Therefore, it i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C12N15/63
CPCC12N15/63
Inventor 程逵姚利利翁文剑
Owner ZHEJIANG UNIV