Ultraviolet photoelectric detector based on gallium oxide heterojunction structure and preparation method thereof

A technology of electrical detectors and heterojunctions, applied in the direction of nanotechnology, circuits, electrical components, etc. for materials and surface science, can solve problems such as application limitations, interference, weak signal processing capabilities, etc., to achieve uniform distribution, Stable performance and responsive effects

Active Publication Date: 2018-03-20
东营睿港招商服务有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] At present, commercialized semiconductor ultraviolet detectors are mainly based on wide-bandgap semiconductor inorganic materials such as SiC, GaN, and ZnO. Such detectors are not based on "sun-blind" detection and are easily interfered by sunlight. The processing of weak signals The ability is relatively weak, so its application is limited

Method used

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  • Ultraviolet photoelectric detector based on gallium oxide heterojunction structure and preparation method thereof
  • Ultraviolet photoelectric detector based on gallium oxide heterojunction structure and preparation method thereof
  • Ultraviolet photoelectric detector based on gallium oxide heterojunction structure and preparation method thereof

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Embodiment 1

[0035] The preparation method of the ultraviolet photodetector based on gallium oxide heterojunction structure comprises the following steps:

[0036] Step 1, spin-coating a layer of nickel-doped gallium oxide seed layer solution on the ITO transparent conductive glass, and drying, that is, forming a layer of nickel-doped gallium oxide seed layer on the ITO transparent conductive glass;

[0037] Step 2, and spin-coat a gallium metal layer on the side of the nickel-doped gallium oxide seed layer away from the ITO transparent conductive glass;

[0038] In step 3, the sample obtained in step 2 is first calcined at 450-500°C for a certain period of time in an oxidizing atmosphere under vacuum conditions, and then heated to 700-750°C for a certain period of time to form α-Ga 2 o 3 / β-Ga 2 o 3 Heterojunction nanosheet arrays;

[0039] Step 4, use the mask plate and use the radio frequency magnetron sputtering technology to separate the α-Ga 2 o 3 / β-Ga 2 o 3 A Ti / i / Au film e...

Embodiment 2

[0050] The preparation method of the ultraviolet photodetector based on gallium oxide heterojunction structure is as follows:

[0051] (1) ITO transparent conductive glass pretreatment: ultrasonic cleaning with acetone, absolute ethanol, and deionized water for 10 minutes, and vacuum drying;

[0052] (2) Preparation of nickel-doped gallium oxide seed layer solution: Take 0.03mL of ethanolamine, 0.16g of gallium isopropoxide, 0.04g of nickel nitrate, and 10mL of ethylene glycol methyl ether into a 15mL beaker, and heat in a water bath at 60°C 60min, after cooling, put it in the refrigerator for later use;

[0053] (3) Preparation of the gallium oxide seed crystal layer: fix the ITO transparent conductive glass treated in step (1) on the sample stage of the glue leveling-glue drying machine, drop 1.5mL of the nickel-doped glass prepared in step (2) Ga 2 o 3 The seed layer solution was spin-coated for 15 seconds at a rotational speed of 3000r / min; after being dried on a rubber...

Embodiment 3

[0058] The preparation method of the ultraviolet photodetector based on gallium oxide heterojunction structure is as follows:

[0059] (1) ITO transparent conductive glass pretreatment: ultrasonic cleaning with acetone, absolute ethanol, and deionized water for 10 minutes, and vacuum drying;

[0060] (2) Preparation of nickel-doped gallium oxide seed layer solution: Take 0.03mL of ethanolamine, 0.16g of gallium isopropoxide, 0.04g of nickel nitrate, and 10mL of ethylene glycol methyl ether into a 15mL beaker, and heat in a water bath at 60°C 60min, after cooling, put it in the refrigerator for later use;

[0061] (3) Preparation of the gallium oxide seed crystal layer: fix the ITO transparent conductive glass treated in step (1) on the sample stage of the glue leveling-glue drying machine, drop 1.0mL of the nickel-doped glass prepared in step (2) Ga 2 o 3 The seed layer solution was spin-coated for 15 seconds at a rotational speed of 3000r / min; after being dried on a rubber...

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Abstract

The invention belongs to the technical field of ultraviolet photoelectric detectors, and particularly relates to an ultraviolet photoelectric detector based on a gallium oxide heterojunction structureand a preparation method thereof. The ultraviolet photoelectric detector includes an alpha-Ga2O3/beta-Ga2O3 heterojunction nanosheet array, ITO transparent conductive glass, and a Ti/Au film electrode. An alpha-Ga2O3/beta-Ga2O3 heterojunction nanosheet is formed by wrapping an alpha-Ga2O3 nanosheet as a core in beta-Ga2O3 as a shell. The ultraviolet photoelectric detector of the invention has stable performance, sensitive reaction and small dark current, and has a good ultraviolet photoelectrical response effect. The preparation method has the characteristics of strong process controllability, simple operation, good universality, and the like, is expected to be widely applied to fields such as self-powered flame detection, high-voltage line corona and missile plume, and has high popularization value.

Description

technical field [0001] The invention belongs to the technical field of ultraviolet photodetectors, and in particular relates to an ultraviolet photoelectric detector based on a gallium oxide heterojunction structure and a preparation method thereof. technical background [0002] At present, commercialized semiconductor ultraviolet detectors are mainly based on wide-bandgap semiconductor inorganic materials such as SiC, GaN, and ZnO. Such detectors are not based on "sun-blind" detection and are easily interfered by sunlight. The processing of weak signals The ability is relatively weak, so its application is limited. β-Ga 2 o 3 It is a semiconductor material with deep ultraviolet characteristics, 200nm β-Ga 2 o 3 The film can achieve a transmittance of more than 80% in the ultraviolet region, making up for the shortcomings of traditional TCO materials in the deep ultraviolet region. , Guidance, atmospheric environmental quality monitoring, ultraviolet light communication...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/0392H01L31/109H01L31/18B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01L31/032H01L31/0392H01L31/109H01L31/18Y02P70/50
Inventor 张香丽
Owner 东营睿港招商服务有限责任公司
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