Super-clean graphene and preparation method thereof

A graphene, ultra-clean technology, applied in the field of materials, can solve the problems of limited application, graphene light transmittance and conductivity decline, many defects, etc., and achieve the effect of simple and effective preparation method, efficient non-destructive transfer, and excellent structure

Active Publication Date: 2018-05-25
PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The graphene prepared by the redox method has many defects due to the chemical reduction reaction process, and the oxidized groups are difficult to completely reduce, resulting in serious doping, which seriously limits its application in the field of electronics.
The chemical vapor deposition method is suitable for large-scale preparation of graphene thin film materials, but there are a large amount of amorphous

Method used

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  • Super-clean graphene and preparation method thereof
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  • Super-clean graphene and preparation method thereof

Examples

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Example Embodiment

[0044] Example 1. Preparation of ultra-clean graphene

[0045] (1) Use 5% dilute hydrochloric acid and deionized water to clean the copper foil (manufactured by Alfa Aesar, purity 99.8%, thickness 25μm), and place the copper foil and foamed copper in close contact with the magnetic control device. In the casing, place the casing in the tube furnace. Under a hydrogen atmosphere with a flow rate of 100sccm, the system pressure is 100Pa, and the temperature of the furnace body is increased to 1020℃ and kept for 30min;

[0046] (2) Keep the temperature of the furnace body at 1020℃, change the hydrogen gas flow rate of 11sccm hydrogen gas, flow methane gas of 7sccm, the system pressure is 50Pa, keep for 30s;

[0047] (3) Use a magnet to pull the casing containing copper foil out of the high temperature area, and quickly drop the sample temperature to room temperature, with a cooling rate of 90°C / min, to end the sample growth;

[0048] (4) Take out the grown copper foil sample, and remove t...

Example Embodiment

[0053] Example 2. Preparation of ultra-clean graphene

[0054] (1) Using phosphoric acid and ethylene glycol solution with a mass ratio of 3:1 as electrolyte, copper foil (produced by Alfa Aesar, purity 99.8%, thickness 25μm) is connected to the positive electrode, and polished for 30 minutes at a DC current of 0.5A. Place the copper foil and foamed copper in close contact with a sleeve with a magnetic control device, and then place the sleeve in a tube furnace. Under a hydrogen atmosphere with a flow of 300sccm, the furnace temperature is increased to 1040°C. The pressure is 300Pa, keep for 50min;

[0055] (2) Keep the temperature of the furnace body at 1040℃, change the hydrogen gas flow to 500sccm hydrogen gas, flow 0.36sccm methane gas, the system pressure is 500Pa, keep for 24h;

[0056] (3) Use a magnet to pull the sleeve with copper foil out of the high temperature area, and quickly drop the temperature of the sample to room temperature to end the growth of the sample;

[0057...

Example Embodiment

[0062] Example 3: Preparation of ultra-clean graphene

[0063] (1) Use 5% dilute hydrochloric acid and deionized water to clean the copper foil (manufactured by Alfa Aesar, purity 99.8%, thickness 25μm), and place the copper foil and foamed copper in close contact with the magnetic control device. In the casing, place the casing in the tube furnace. Under a hydrogen atmosphere with a flow rate of 100sccm, the system pressure is 100Pa, and the temperature of the furnace body is increased to 1020℃ and kept for 30min;

[0064] (2) Keep the temperature of the furnace body at 1020°C, change the hydrogen gas flow rate to 11sccm hydrogen gas, flow methane gas flow rate of 1sccm, the system pressure is 48Pa, keep 300s;

[0065] (3) Use a magnet to pull the casing containing copper foil out of the high temperature area, and quickly drop the sample temperature to room temperature, with a cooling rate of 90°C / min, to end the sample growth;

[0066] (4) Take out the grown copper foil sample, and ...

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Abstract

The invention discloses super-clean graphene and a preparation method thereof. The preparation method of the super-clean graphene comprises the following steps: putting foam copper on a copper substrate, and attaching; leading carbon source gas and hydrogen to perform chemical vapor deposition; after deposition is completed, obtaining the super-clean graphene at the contact surface of the copper substrate and the foam copper. The preparation method has the advantages that the preparation method is simple and is suitable for large-scale production, the continuous clean area reaches the sub-centimeter level, and the preparation method is suitable for the fields of electronics, optics and the like.

Description

technical field [0001] The invention belongs to the field of materials, and in particular relates to an ultra-clean graphene and a preparation method thereof. Background technique [0002] Graphene is a two-dimensional film material formed by a single layer of carbon atoms arranged in a hexagonal symmetrical honeycomb structure. Due to the excellent properties of graphene in electricity, optics, heat and mechanics, it has attracted extensive attention in the fields of physics, chemistry, biology and materials since its discovery. For example, single-layer graphene has a Dirac cone-shaped energy band structure, and at the Fermi level, energy and momentum have a linear dispersion relationship. This unique energy band structure determines that graphene has extremely high carrier mobility, so graphene has gradually become a favorable substitute for traditional silicon-based electronic materials. Because graphene is a single atomic layer thin film material, its light absorption...

Claims

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Application Information

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IPC IPC(8): C01B32/186
CPCC01P2002/82C01P2004/04
Inventor 刘忠范彭海琳林立张金灿
Owner PEKING UNIV
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