Full-solid electrochromic window, solid electrochromic glass and preparing method thereof
An electrochromic, electrochromic layer technology, applied in nonlinear optics, instruments, optics, etc., can solve the problems of low lithium ion conductivity, poor cycle stability, and affecting discoloration rate, etc., to achieve high lithium ion conductivity, Excellent stability and low electronic conductivity
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Embodiment 1
[0048] The structure is [glass substrate / indium tin oxide conductive layer / lithium intercalation vanadium pentoxide ion storage layer / Li 2.4 Si 0.6 Y 0.4 S 2.4 O 0.8 Electrochromic window of electrolyte layer / tungsten trioxide electrochromic layer / indium tin oxide conductive layer]
[0049] Preparation method: with 10 wt% SnO 2 and 90 wt%In 2 O 3 The sintered ceramic was used as the target material, and an indium tin oxide conductive layer with a thickness of 150 nm was plated on the glass substrate by radio frequency magnetron sputtering method; the metal vanadium was used as the target material, in a mixed gas of argon and oxygen ( Under the flow ratio of 1:9), a layer of vanadium pentoxide with a thickness of 200 nm was plated on the indium tin oxide conductive layer by radio frequency magnetron sputtering, and then the vanadium pentoxide was formed by thermal evaporation of metallic lithium under vacuum. Preparation of lithium-inserted vanadium pentoxide ion storage...
Embodiment 2
[0052] The structure is [glass substrate / aluminum-doped zinc oxide conductive layer / lithium-inserted tungsten trioxide ion storage layer / Li 2.4 Si 0.6 Sm 0.6 S 3.1 O 0.4 Electrochromic window of electrolyte layer / nickel oxide electrochromic layer / aluminum-doped zinc oxide conductive layer]
[0053] Preparation method: with (1-x)ZnO+xAl 2 O 3 (x = 2 wt%) sintered ceramics were used as targets, and an aluminum-doped zinc oxide conductive layer with a thickness of 150 nm was plated on glass substrates by radio frequency magnetron sputtering; tungsten trioxide ceramics were used as targets , a layer of tungsten trioxide with a thickness of 200 nm was plated on the aluminum-doped zinc oxide conductive layer by radio frequency magnetron sputtering, and then the lithium-intercalated tungsten trioxide ion storage layer was prepared by thermal evaporation of metallic lithium under vacuum; 2.4 Si 0.6 Sm 0.6 S 3.1 O 0.4 As the target, an electrolyte layer with a thickness of 40...
Embodiment 3
[0056] The structure is [glass substrate / reflective silver layer / indium tin oxide conductive layer / lithium intercalation vanadium pentoxide ion storage layer / Li 2 SiY 0.3 S 3.1 O 0.2 Electrochromic mirror of electrolyte layer / tungsten trioxide electrochromic layer / indium tin oxide conductive layer]
[0057] Preparation method: using metallic silver as the target, a silver reflective layer with a thickness of 70 nm is coated on a glass substrate by radio frequency magnetron sputtering; 2 and 90 wt%In 2 O 3 The sintered ceramic was used as the target, and an indium tin oxide conductive layer with a thickness of 150 nm was plated on the silver reflective layer by radio frequency magnetron sputtering. Under the flow ratio of 1:9), a layer of vanadium pentoxide with a thickness of 200 nm was plated on the indium tin oxide conductive layer by radio frequency magnetron sputtering, and then the vanadium pentoxide was formed by thermal evaporation of metallic lithium under vacuum....
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