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Photoresist composition comprising poly (p-hydroxy styrene) oxetane resin used as film formation resin

A technology of film-forming resin and composition, which is applied in the direction of photosensitive materials, optics, and optomechanical equipment used in optomechanical equipment, and can solve problems such as complex process flow, wide molecular weight distribution of products, and few types of photoresist negatives

Active Publication Date: 2018-07-20
HUBEI GURUN TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As an epoxy system, it mainly includes novolac epoxy resin. Its main performance characteristics are as described above for the film-forming resin of SU-8 photoresist. Its disadvantages: phenolic resin is synthesized by polycondensation reaction , the degree of polycondensation reaction is not easy to control, the molecular weight distribution of the obtained product is wide, the product needs to be graded and screened, the process is complex and difficult to operate, and the cost is high
However, there are fewer types of poly(p-hydroxystyrene) photoresist negative resists currently developed, and the obtained photoresists are not thick film photoresists, but ordinary photoresists.

Method used

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  • Photoresist composition comprising poly (p-hydroxy styrene) oxetane resin used as film formation resin
  • Photoresist composition comprising poly (p-hydroxy styrene) oxetane resin used as film formation resin
  • Photoresist composition comprising poly (p-hydroxy styrene) oxetane resin used as film formation resin

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Experimental program
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Effect test

Embodiment

[0155] The present invention will be further described below in conjunction with the examples, but they should not be construed as limiting the protection scope of the present invention.

[0156] The characterization and detection methods involved in the following examples are as follows:

[0157] 1. Infrared Spectroscopy Characterization Method

[0158] Infrared spectrum was measured by Shimadzu IRAffinity Fourier Transform Infrared Spectrometer with a scanning range of 4000-400cm -1 , the sample was processed by KBr pellet method.

[0159] 2. 1 H NMR spectrum characterization method

[0160] 1 H NMR was measured with a Bruker Avame PRX400 nuclear magnetic resonance instrument, the chemical shift was expressed in ppm, the solvent was deuterated chloroform, the internal standard was tetramethylsilane, the scan width was 400 MHz, and the number of scans was 16 times.

[0161] 3. Determination method of ultraviolet absorption spectrum

[0162] Using acetonitrile as a solve...

preparation Embodiment 1

[0165] Preparation Example 1: Polymer 1

[0166]

[0167] Take 50mL of acetone as a solvent, add 13.4g of poly-m-methyl-p-hydroxystyrene (number-average molecular weight 2680, n=20) (0.1mol repeating unit) to the solvent, stir electrically, feed nitrogen, add potassium carbonate 8.28g ( 0.06mol), the reaction temperature of the resulting mixture is controlled at 60°C, and 19.2g 3-chloromethyloxetane (0.18mol) is slowly added dropwise through a constant pressure dropping funnel, and the dropwise addition is completed within 0.5h, and then the The resulting reaction mixture was reacted at 60° C. for 12 h. After the reaction was completed, 100 mL of dichloromethane was added, extracted with water, and the organic layer was extracted with MgSO 4 After drying, the solvent was evaporated under reduced pressure to obtain a solid product, which was washed three times with water, filtered and dried to obtain a product which was analyzed as the title compound.

[0168] The NMR data...

preparation Embodiment 2

[0171] Preparation Example 2: Polymer 2

[0172]

[0173] Take 50 mL of acetone as the solvent, add 17.6 g of poly-2,3,5,6-tetramethyl-p-hydroxystyrene (number-average molecular weight 3520, n=20) (0.1 mol repeating unit) to the solvent, stir electrically, and feed Nitrogen, add potassium carbonate 8.28g (0.06mol), the reaction temperature of the gained mixture is controlled at 60 ℃, slowly add 21.6g 3-methyl-3-chloromethyl oxetane ( 0.18mol), the dropwise addition was completed within 0.5h, and then the resulting reaction mixture was reacted at 60°C for 12h. After the reaction was completed, 100 mL of dichloromethane was added, extracted with water, and the organic layer was extracted with MgSO 4 After drying, the solvent was evaporated under reduced pressure to obtain a solid product, which was washed three times with water, filtered and dried to obtain a product which was analyzed as the title compound.

[0174] The NMR data of the resulting product are as follows (d-C...

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Abstract

The invention relates to a photoresist composition comprising a formula (I) polymer used as film formation resin. Ra-Rd, R and n are defined in the specification. The film formation polymer containedin the photoresist composition and used as film formation resin of photoresist has the advantages of good ultraviolet transmittance, large viscosity, thick film formation, thorough photocuring, high resolution and the like. The photoresist is negative thick-film photoresist which can be used for advanced package technology and micro electro mechanical system (MEMS) manufacturing, the film thickness obtained during one-time operation of a glue spinning sheet can reach 20-100 micrometers according to demand, the independent line width range of resolution is 5 micrometers or above, and the sensitivity is 50-80mJ / cm<-2> (calculated according to 20-micrometer film thickness).

Description

technical field [0001] The present invention relates to a photoresist composition comprising a poly(p-hydroxystyrene-based oxetane resin) as a film-forming resin. The photoresist composition is suitable for the fields of advanced packaging (silicon chip and packaging WLP) and micro-electromechanical systems (MEMS, Micro-Electronic Machine System) of large-scale integrated circuits. Background technique [0002] Photoresist is an etching-resistant film material whose solubility changes under the irradiation or radiation of ultraviolet light, excimer laser, electron beam, ion beam, X-ray and other light sources. Since its invention in the 1950s, photoresist has become the core process material in the semiconductor industry and is widely used in the manufacture of integrated circuits and printed circuit boards. In the early 1990s, photoresist was applied to the processing and production of LCD devices, which played an important role in promoting the large-scale, high-definitio...

Claims

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Application Information

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IPC IPC(8): G03F7/027G03F7/004C08F8/00C08F112/14
Inventor 邹应全郭晔嘉庞玉莲
Owner HUBEI GURUN TECH CO LTD
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