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Preparation method of lead zirconate titanate film

A lead zirconate titanate and thin film technology is applied in the field of low-temperature preparation of high-crystalline lead zirconate titanate thin film materials, which can solve the problems of poor compatibility of high-temperature treatment processes, low density of thin films, cumbersome preparation processes, etc. Simple operation and uniform film formation

Inactive Publication Date: 2018-09-11
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The traditional solid-phase method has the advantages of high yield and easy processing; while the liquid-phase method includes liquid-phase encapsulation method, hydrothermal method, precipitation method and gel method, etc., the preparation method of the liquid-phase method requires simple equipment and is easy to process in large areas. However, the film obtained by the above method has low film density and rough surface, and the preparation process is relatively cumbersome, including pre-sintering, grinding, molding, plastic discharge, sintering and other processes
In addition, the sintering process of the above method also requires high-temperature treatment, which is not energy-saving and environmentally friendly, and the compatibility of the above-mentioned high-temperature treatment process is poor, so its practical application is still subject to certain restrictions

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  • Preparation method of lead zirconate titanate film
  • Preparation method of lead zirconate titanate film
  • Preparation method of lead zirconate titanate film

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0026] What the present embodiment obtains is based on the PZT thin film of perovskite type, and its preparation method is as follows:

[0027] (1) A layer of titanium / molybdenum alloy is prepared on a silicon substrate by magnetron sputtering, wherein the thickness of titanium is 5 nanometers, and the thickness of molybdenum is 200 nanometers. Wherein, the fabrication method of the silicon base layer is Si / SiO 2 As a substrate, acetone, ethanol, and purified water were sonicated for 40 minutes in sequence, followed by N 2 air-dried, and placed in a vacuum oven at 100°C for 10 minutes to obtain a base layer.

[0028] (2) Place the above substrate in a vacuum chamber and vacuumize for 2 hours to make the vacuum pressure 1x10 -4 Pa.

[0029] (3) Open and adjust the concentration of oxygen in the vacuum chamber so that the pressure of oxygen in the chamber is 15Pa.

[0030] (4) Turn on and adjust the laser so that the intensity of the laser is 300 mJ.

[0031] (5) Adjust the...

Embodiment 2

[0035] What the present embodiment obtains is based on the PZT thin film of pyrochlore phase, and its preparation method is as follows:

[0036] (1) A layer of titanium / platinum alloy was prepared on a PI (polyimide) substrate by magnetron sputtering, wherein the thickness of titanium was 2 nanometers, and the thickness of platinum was 500 nanometers. Among them, the method of making the PI base layer is to use acetone, ethanol, and pure water to sonicate for 40 minutes in sequence, and then use N 2 air-dried, and placed in a vacuum oven at 100°C for 10 minutes to obtain a base layer.

[0037] (2) Place the above substrate in a vacuum chamber and vacuumize for 2 hours to make the vacuum pressure 1x10 -4 Pa.

[0038] (3) Open and adjust the concentration of oxygen in the vacuum chamber so that the pressure of oxygen in the chamber is 100Pa.

[0039] (4) Turn on and adjust the laser so that the intensity of the laser is 50 mJ.

[0040] (5) Adjust the temperature of the subst...

Embodiment 3

[0044] What the present embodiment obtains is based on the PZT thin film of perovskite type, and its preparation method is as follows:

[0045] (1) A layer of titanium / chromium alloy is prepared on a silicon substrate by magnetron sputtering, wherein the thickness of titanium is 5 nanometers, and the thickness of chromium is 200 nanometers. Wherein, the fabrication method of the silicon base layer is Si / SiO 2 As a substrate, acetone, ethanol, and purified water were sonicated for 40 minutes in sequence, followed by N 2 air-dried, and placed in a vacuum oven at 100°C for 10 minutes to obtain a base layer.

[0046] (2) Place the above substrate in a vacuum chamber and vacuumize for 2 hours to make the vacuum pressure 1x10 -4 Pa.

[0047] (3) Open and adjust the concentration of oxygen in the vacuum chamber so that the pressure of oxygen in the chamber is 30Pa.

[0048] (4) Turn on and adjust the laser so that the intensity of the laser is 100 mJ.

[0049] (5) Adjust the tem...

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Abstract

The invention discloses a preparation method of a lead zirconate titanate film. Target material molecules are bombarded by a high-energy pulsed laser beam emitted by an excimer laser, and the molecules or a molecule group is stripped from a target material and deposited on a temperature-controllable heating substrate to form the dense and uniform film. The preparation method is easy to operate andlow in energy consumption, low-temperature and low-energy-consumption preparation of the high-crystallinity zirconium lead zirconate titanate film material is achieved, the needs of different devicescan be met, and the good application prospects are achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation, in particular to a method for preparing a high-crystallinity lead zirconate titanate film material at low temperature. Background technique [0002] Lead zirconate titanate [Pb(Zr x Ti 1-x )O 3 , referred to as PZT] due to its large piezoelectric and electromechanical coupling coefficient, high dielectric constant and significant remanent polarization, it shows excellent piezoelectric, ferroelectric and pyroelectric properties. Therefore, PZT has a wide range of applications in many fields such as piezoelectric sensors, microelectromechanical systems (MEMS), high-speed non-volatile ferroelectric memories, infrared detectors, optical switches, optical modulators, and surface acoustic wave devices. Recent studies have shown that the properties of lead zirconate titanate films, especially the piezoelectric properties, are closely related to the composition, molecular ar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/58
CPCC23C14/088C23C14/35C23C14/5806
Inventor 王凤霞陈涛孙立宁
Owner SUZHOU UNIV