Preparation method of lead zirconate titanate film
A lead zirconate titanate and thin film technology is applied in the field of low-temperature preparation of high-crystalline lead zirconate titanate thin film materials, which can solve the problems of poor compatibility of high-temperature treatment processes, low density of thin films, cumbersome preparation processes, etc. Simple operation and uniform film formation
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0026] What the present embodiment obtains is based on the PZT thin film of perovskite type, and its preparation method is as follows:
[0027] (1) A layer of titanium / molybdenum alloy is prepared on a silicon substrate by magnetron sputtering, wherein the thickness of titanium is 5 nanometers, and the thickness of molybdenum is 200 nanometers. Wherein, the fabrication method of the silicon base layer is Si / SiO 2 As a substrate, acetone, ethanol, and purified water were sonicated for 40 minutes in sequence, followed by N 2 air-dried, and placed in a vacuum oven at 100°C for 10 minutes to obtain a base layer.
[0028] (2) Place the above substrate in a vacuum chamber and vacuumize for 2 hours to make the vacuum pressure 1x10 -4 Pa.
[0029] (3) Open and adjust the concentration of oxygen in the vacuum chamber so that the pressure of oxygen in the chamber is 15Pa.
[0030] (4) Turn on and adjust the laser so that the intensity of the laser is 300 mJ.
[0031] (5) Adjust the...
Embodiment 2
[0035] What the present embodiment obtains is based on the PZT thin film of pyrochlore phase, and its preparation method is as follows:
[0036] (1) A layer of titanium / platinum alloy was prepared on a PI (polyimide) substrate by magnetron sputtering, wherein the thickness of titanium was 2 nanometers, and the thickness of platinum was 500 nanometers. Among them, the method of making the PI base layer is to use acetone, ethanol, and pure water to sonicate for 40 minutes in sequence, and then use N 2 air-dried, and placed in a vacuum oven at 100°C for 10 minutes to obtain a base layer.
[0037] (2) Place the above substrate in a vacuum chamber and vacuumize for 2 hours to make the vacuum pressure 1x10 -4 Pa.
[0038] (3) Open and adjust the concentration of oxygen in the vacuum chamber so that the pressure of oxygen in the chamber is 100Pa.
[0039] (4) Turn on and adjust the laser so that the intensity of the laser is 50 mJ.
[0040] (5) Adjust the temperature of the subst...
Embodiment 3
[0044] What the present embodiment obtains is based on the PZT thin film of perovskite type, and its preparation method is as follows:
[0045] (1) A layer of titanium / chromium alloy is prepared on a silicon substrate by magnetron sputtering, wherein the thickness of titanium is 5 nanometers, and the thickness of chromium is 200 nanometers. Wherein, the fabrication method of the silicon base layer is Si / SiO 2 As a substrate, acetone, ethanol, and purified water were sonicated for 40 minutes in sequence, followed by N 2 air-dried, and placed in a vacuum oven at 100°C for 10 minutes to obtain a base layer.
[0046] (2) Place the above substrate in a vacuum chamber and vacuumize for 2 hours to make the vacuum pressure 1x10 -4 Pa.
[0047] (3) Open and adjust the concentration of oxygen in the vacuum chamber so that the pressure of oxygen in the chamber is 30Pa.
[0048] (4) Turn on and adjust the laser so that the intensity of the laser is 100 mJ.
[0049] (5) Adjust the tem...
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More 


