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A kind of self-driven photodetector and its preparation method

A photodetector and self-driven technology, applied in photovoltaic power generation, electric solid-state devices, semiconductor/solid-state device manufacturing, etc., can solve the problems of accelerating human skin aging, and achieve the effects of avoiding additional costs, improving light absorption, and fast response

Inactive Publication Date: 2020-07-03
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, excessive ultraviolet radiation can accelerate the aging of human skin and even cause skin cancer

Method used

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  • A kind of self-driven photodetector and its preparation method
  • A kind of self-driven photodetector and its preparation method
  • A kind of self-driven photodetector and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039]Cleaning of the substrate, in the present invention, the substrate can be a semiconductor substrate such as glass, PET, high-purity silicon, etc., and a PET substrate is mainly used in this embodiment. The substrate was cut into a suitable size (1cm×5cm), then ultrasonically cleaned with absolute ethanol and deionized water in an ultrasonic cleaner for 5 min, and then dried with nitrogen to obtain a clean substrate, and then at 100 ℃, heating for 10min.

[0040] The conductive layer can be gold, silver or ITO. The preparation of the conductive layer mainly uses ion sputtering technology or magnetron sputtering technology:

[0041] Ion sputtering technology: transfer the cleaned substrate into a vacuum chamber, and place a gold or silver target, the purity of the target is >99.999%, the vacuum degree of the reaction chamber during sputtering is better than 0.05mbar, the sputtering current is 20mA, and the sputtering current is 20mA. Shooting time 5min.

[0042] Magnetro...

Embodiment 2

[0056] Cleaning of the substrate, in the present invention, the substrate can be a semiconductor substrate such as glass, PET, high-purity silicon, etc., and a PET substrate is mainly used in this embodiment. The substrate was cut into a suitable size (1cm×5cm), then ultrasonically cleaned with absolute ethanol and deionized water in an ultrasonic cleaner for 5 min, and then dried with nitrogen to obtain a clean substrate, and then at 100 ℃, heating for 10min.

[0057] The conductive layer can be gold, silver or ITO. The preparation of the conductive layer mainly uses ion sputtering technology or magnetron sputtering technology:

[0058] Ion sputtering technology: transfer the cleaned substrate into a vacuum chamber, and place a gold or silver target, the purity of the target is >99.999%, the vacuum degree of the reaction chamber during sputtering is better than 0.05mbar, the sputtering current is 20mA, and the sputtering current is 20mA. Shooting time 5min.

[0059] Magnetr...

Embodiment 3

[0069] For the cleaning of the photodetector substrate, in the present invention, the substrate can be a semiconductor substrate such as glass, PET, high-purity silicon, etc., and glass is mainly used in this embodiment. Cut the substrate into a suitable size (1cm×5cm), then use acetone, anhydrous ethanol, and deionized water in an ultrasonic cleaner for ultrasonic cleaning for 5 minutes, and then dry it with nitrogen to obtain a clean substrate. At 100°C, heat for 10 min.

[0070] The conductive layer can be gold, silver or ITO. The preparation of the conductive layer mainly uses ion sputtering technology or magnetron sputtering technology:

[0071] Ion sputtering technology: transfer the cleaned substrate into a vacuum chamber, and place a gold or silver target, the purity of the target is >99.999%, the vacuum degree of the reaction chamber during sputtering is better than 0.05mbar, the sputtering current is 20mA, and the sputtering current is 20mA. Shooting time 5min.

[...

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Abstract

The invention relates to a self-driven photodetector and a preparation method thereof. The photodetector is characterized by an insulating substrate, a conductive layer, a high dielectric constant layer, a perovskite quantum dot layer, and interdigitated electrodes. The preparation method comprises the following steps: preparation of perovskite quantum dots; deposition of substrate surface electrodes; deposition of high dielectric constant layers; deposition of quantum dots; preparation of interdigital electrodes by sputtering. The quantum dots are transferred to the substrate by electrodeposition to form a perovskite quantum dot structure layer with a porous stacked shape, which can realize multiple absorption of light. The obtained self-driven photodetector has the characteristics of fast response, high sensitivity, flexibility and bendability.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a self-driven photodetector and a preparation method thereof. Background technique [0002] According to the standards of the International Commission on Illumination, ultraviolet radiation is divided into three bands: UVA: 320-400nm, UVB: 280-320nm, UVC: 10-280nm. In addition, there is no ultraviolet radiation with a wavelength of 220-280nm on the earth's surface, and ultraviolet radiation with a wavelength below 180nm is called vacuum ultraviolet radiation. Ultraviolet radiation has a great impact on human survival and development. For example, due to the interaction between UV light and the human stratum corneum, it is able to produce 90% of the vitamin D required by the human body and promote bone growth. However, excessive UV radiation can accelerate the aging of human skin and even lead to skin cancer. Therefore, there is a great demand for UV photodetecto...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH10K30/15H10K30/00Y02E10/549
Inventor 陈心满张晓楠蒋治国章勇
Owner SOUTH CHINA NORMAL UNIVERSITY
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